Datasheet spd30n03 Datasheet

j

g

SIPMOS Power Transistor

Features

• N channel

• Enhancement mode

• Avalanche rated

v/dt

• d

rated

• 175˚C operating temperature

SPD30N03 Tape and ReelP-TO252 Q67040-S4144-A2 SPU30N03 TubeQ67040-S4146-A2P-TO251-3-1

Product Summary

Drain source voltage Drain-Source on-state resistance Continuous drain current 30 A

SPD 30N03

V

DS

R

DS(on)

I

D

PackagingType Package Ordering Code

Pin 1 Pin 2 Pin 3

G D S

30

0.015

V

Ω

Maximum Ratings, at

T

= 25 ˚C, unless otherwise specified

Parameter

Continuous drain current

T

= 25 ˚C, 1)

C

T

= 100 ˚C

C

Pulsed drain current

T

= 25 ˚C

C

Avalanche energy, single pulse

I

= 30 A,

D

V

DD

= 25 V,

R

= 25 Ω

GS

Avalanche energy, periodic limited by Reverse diode dv/dt

I

= 30 A,

S

T

jmax

V

DS

= 175 ˚C

= 24 V, di/dt = 200 A/µs,

Gate source voltage Power dissipation

T

= 25 ˚C

C

T

max

Symbol UnitValue

I

D

30

I

Dpulse

E

AS

E

AR

dv/d

V

GS

P

tot

t

120

250

12

6 kV/µs

±20

120 W

A

mJ

V

Operating and storage temperature

T

,

st

˚C-55... +175

55/175/56IEC climatic category; DIN IEC 68-1

Data Sheet 1 05.99

Thermal Characteristics

j

SPD 30N03

Parameter

ValuesSymbol Unit

typ. max.min.

Characteristics

- 1.25 K/WThermal resistance, junction - case

-Thermal resistance, junction - ambient, leded

-

- 100

-

SMD version, device on PCB: @ min. footprint

2

@ 6 cm

cooling area2)

Electrical Characteristics, at

R

thJC

R

thJA

R

thJA

= 25 ˚C, unless otherwise specified

T

Parameter Symbol UnitValues

min. max.typ.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA

D

V

(BR)DSS

30 - V

-

75

50

Gate threshold voltage,

I

= 80 µA

D

Zero gate voltage drain current

V V

DS DS

= 30 V, = 30 V,

V V

= 0 V,

GS

= 0 V,

GS

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= 10 V,

GS

1

current limited by bond wire

2

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

= 30 A

D

V

=

GS

T

= 25 ˚C

j

T

= 150 ˚C

j

V

DS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

-

0.1

-

- 10 nA100

- 0.0085 0.015

432.1

µA

1

100

Ω

Data Sheet 2 05.99

SPD 30N03

j

Electrical Characteristics, at Parameter

Dynamic Characteristics

Transconductance

V

≥2*

I

*

DS

R

D

DS(on)max

,

I

= 30 A

D

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V

DD

R

= 6.8 Ω

G

= 15 V,

V

GS

= 10 V,

I

= 30 A,

D

T

= 25 ˚C, unless otherwise specified

Symbol Values Unit

min. typ. max.

g

fs

C

iss

C

oss

C

rss

t

d(on)

18 34 - S

- 1400 1750 pF

- 645 810

- 260 325

- 20 30 ns

Rise time

V

DD

R

= 6.8 Ω

G

= 15 V,

V

GS

= 10 V,

Turn-off delay time

V

DD

R

= 6.8 Ω

G

= 15 V,

V

GS

= 10 V,

Fall time

V

DD

R

= 6.8 Ω

G

= 15 V,

V

GS

= 10 V,

I

= 30 A,

D

I

= 30 A,

D

I

= 30 A,

D

t

r

t

d(off)

t

f

- 35 52

- 50 75

- 45 65

Data Sheet 3 05.99

SPD 30N03

j

Electrical Characteristics, at Parameter

Dynamic Characteristics

Gate to source charge

V

= 24 V,

DD

I

= 30 A

D

Gate to drain charge

V

= 24 V,

DD

I

= 30 A

D

Gate charge total

V

= 24 V,

DD

I

= 30 A,

D

V

= 0 to 10 V

GS

Gate plateau voltage

V

= 24 V,

DD

I

= 30 A

D

= 25 ˚C, unless otherwise specified

T

Symbol Values Unit

Q

gs

Q

gd

Q

g

V

(plateau)

min. typ. max.

-

- 19

7.5 nC5

28.5

- 39 60

4.8 - V-

Reverse Diode

Inverse diode continuous forward current

T

= 25 ˚C

C

Inverse diode direct current,pulsed

T

= 25 ˚C

C

Inverse diode forward voltage

V

= 0 V,

GS

I

= 60 A

F

Reverse recovery time

V

= 15 V,

R

I

=

I

, d

i

F

S

/dt = 100 A/µs

F

Reverse recovery charge

V

= 15 V,

R

I

l

, d

i

=

F

S

/dt = 100 A/µs

F

I

V

t

Q

S

SM

SD

rr

- - 30 A

- - 120

- 1 V1.6

- 40 ns60

- µC0.035 0.052

Data Sheet 4 05.99

SPD 30N03

Power Dissipation

P

= f (

T

tot

P

tot

130

W

110 100

90 80 70 60 50 40 30 20 10

)

C

SPD30N03

0

0 20 40 60 80 100 120 140 160˚C190

Drain current

I

= f (

T

D

parameter:

D

I

T

C

)

C

V

≥ 10 V

GS

SPD30N03

32

A

24

20

16

12

8

4

0

0 20 40 60 80 100 120 140 160˚C190

T

C

Safe operating area

I

= f (

V

3

A

2

1

0

10

)

DS

SPD30N03

-1

D

= 0 ,

V

=

DS(on)

R

10

D

parameter :

10

D

I

10

T

= 25 ˚C

C

D

I

/

DS

0

10

DC

1

t

= 65.0µs

p

100 µs

1 ms

10 ms

V

DS

10

Transient thermal impedance

Z

= f (

t

SPD30N03

1

0

-7

10

)

p

D = t

single pulse

-6

10

/

T

p

-5

parameter :

2

thJC

K/W

thJC

Z

10

-1

-2

-3

-4

-5

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-4

-3

10

-2

t

0

s

10

p

Data Sheet 5 05.99

SPD 30N03

Typ. output characteristics

I

= f (

V

D

parameter:

D

I

)

DS

t

= 80 µs

p

SPD30N03

75

P

= 120W

tot

A

k

h

i

j

l

f

e

g

60 55 50 45 40 35 30 25 20 15 10

5 0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Typ. transfer characteristics

t

parameter:

V

≥ 2 x

DS

70

A

60 55 50 45

D

I

40 35 30 25 20 15 10

5 0

2.8 3.2 3.8 4.2 4.8 5.2

= 80 µs

p

I

x

D

R

DS(on) max

I

D

V

GS a 4.0

b 4.5

d

c 5.0 d 5.5 e 6.0 f 6.5 g 7.0

c

h 7.5 i 8.0 j 9.0 k 10.0 l 20.0

b

a

= f (

[V]

V

Typ. drain-source-on-resistance

R

DS(on)

parameter:

V

5.0

DS

GS

)

Typ. forward transconductance

gfs = f(I

parameter:

g

V

6.0

GS

= f (

I

)

D

V

GS

SPD30N03

0.050

Ω

a

0.040

0.035

DS(on)

0.030

R

0.025

0.020

0.015

0.010

V

0.005

0.000

GS

a

4.0

0 10 20 30 40 50

);

D

45

S

35

30

[V] =

b

4.5

T

= 25˚C

j

g

fs

5.0

b

c

d

e

5.5

6.0

6.5

fs

25

20

15

10

5

0

0 10 20 30 40

c

f

g

7.0

7.5

d

e

f

g

k

h

j

i

8.0

l

i

j

k

9.0

A

l

10.0

20.0

A

65

I

D

60

I

D

h

Data Sheet 6 05.99

SPD 30N03

Drain-source on-resistance

R

DS(on)

parameter :

= f (

T

)

j

I

0.036

SPD30N03

= 30 A,

D

V

GS

Ω

0.028

0.024

DS(on)

R

0.020

0.016

0.012

0.008

0.004

0.000

-60 -20 20 60 100 140

98%

typ

= 10 V

Typ. capacitances

˚C

Gate threshold voltage

V

parameter :

200

T

j

= f (

T

V

)

j

GS

=

V

DS

,

I

GS(th)

5.0

V

4.4

4.0

3.6

3.2

GS(th)

V

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

-60 -20 20 60 100 140

= 80 µA

D

˚C

max

typ

min

200

T

j

Forward characteristics of reverse diode

f

(VDS)

C = parameter:

4

10

pF

C

3

10

2

10

0 4 8 12 16 20 24 28 32

V

= 0 V, f = 1 MHz

GS

Ciss

Coss

Crss

V

DS

40

I

= f (

F

V

SD

parameter:

SPD30N03

3

10

A

2

10

F

I

1

10

0

10

0.0 0.4 0.8 1.2 1.6 2.0 2.4

)

T

,

t

= 80 µs

j

p

T

= 25 ˚C typ

j

T

= 175 ˚C typ

j

T

= 25 ˚C (98%)

j

T

= 175 ˚C (98%)

j

V

3.0

V

SD

Data Sheet 7 05.99

SPD 30N03

Avalanche Energy

I

parameter:

R

= 25 Ω

GS

250

mJ

AS

150

E

100

50

0

20 40 60 80 100 120 140

= 30 A,

D

E

AS

V

= f (

= 25 V

DD

T

)

j

Typ. gate charge

V

=

f (Q

GS

parameter:

SPD30N03

16

Gate

I

D puls

)

= 30 A

V

12

10

GS

V

0,8

V

DS max

nC

Q

60

Gate

˚C

V

8

6

4

2

0

180

T

j

0 10 20 30 40

0,2

DS max

Drain-source breakdown voltage

V

(BR)DSS

V

= f (

T

)

j

SPD30N03

37

V

35

34

33

32

31

30

29

28

27

-60 -20 20 60 100 140

˚C

200

T

j

Data Sheet 8 05.99