Datasheet spd18p06p_rev.3.4 Datasheet

SIPMOS Power-Transistor

° Pb-free lead plating; RoHS compliant

SPD18P06P G

Features

·

P-Channel

·

Enhancement mode

·

Avalanche rated

·

dv/dt rated

·

175°C operating temperature

Product Summary

Drain source voltage V Drain-source on-state resistance Continuous drain current A

V

DS

R

DS(on)

I

D

Pin 1 PIN 2/4 PIN 3

Type Package

G D S

SPD18P06P G PG-TO252-3

Maximum Ratings,at

T

= 25 °C, unless otherwise specified

j

Parameter Symbol UnitValue

Continuous drain current

I

D

-60

0.13

-18.6

W

A

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche energy, single pulse

I

= -18.6 A ,

D

V

DD

= -25 V,

R

GS

= 25

Avalanche energy, periodic limited by

I

= -18.6 A,

S

T

= 175 °C

jmax

V

= -48 V, di/dt = 200 A/µs,

DS

Gate source voltage Power dissipation

T

= 25 °C

C

Operating and storage temperature

W

T

jmax

I

D puls

E

AS

E

AR

dv/d

V

GS

P

tot

T

,

j

t

T

stg

-18.6

-13.2

-74.4

150 mJ

8 6Reverse diode dv/dt

±20 V

80 W

-55...+175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

kV/µs

Rev 3.4 Page 1

2008-09-02

Thermal Characteristics Parameter Symbol UnitValues

min. max.typ.

Characteristics

SPD18P06P G

R

thJC

Thermal resistance, junction - ambient, leaded SMD version, device on PCB:

R R

thJA thJA

@ min. footprint @ 6 cm2 cooling area

Electrical Characteristics, at

1)

T

= 25 °C, unless otherwise specified

j

- 1.85-Thermal resistance, junction - case K/W

- 100

-

75 50

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

Gate threshold voltage,

I

= -1 mA

D

I

= -250 µA

D

V

GS

=

V

DS

V

(BR)DSS

V

GS(th)

-60 - V-

-2.1 -3 -4

Zero gate voltage drain current

V V

V

DS DS

GS

= -60 V, = -60 V,

= -20 V,

V V

V

= 0 V,

GS

= 0 V,

GS

= 0 V

DS

T

= 25 °C

j

T

= 150 °C

j

Drain-source on-state resistance

V

= -10 V,

GS

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev 3.4 Page 2

I

= -13.2 A

D

I

DSS

I

GSS

R

DS(on)

-

-0.1

-10

-1

-100

- -10 -100Gate-source leakage current

- 0.1 0.13

2008-09-02

µA

nA

W

SPD18P06P G

Electrical Characteristics, at

T

= 25 °C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

³

2*

I

*

DS

R

D

DS(on)max

,

I

= -13.2 A

D

Input capacitance

V

= 0 V,

GS

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

V

= -25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD G

= 2.7

= -30 V,

W

V

GS

= -10 V,

I

D

= -13.2 A,

g

fs

C

iss

C

oss

C

rss

t

d(on)

4

690 860 pF-

- 290230Output capacitance

-

- 18 ns12

S-8

12095

Rise time

V R

DD G

= 2.7

= -30 V,

W

V

GS

= -10 V,

Turn-off delay time

V R

DD G

= 2.7

= -30 V,

W

V

GS

= -10 V,

Fall time

V R

DD G

= 2.7

= -30 V,

W

V

GS

= -10 V,

I

= -13.2 A,

D

I

= -13.2 A,

D

I

= -13.2 A,

D

t

r

t

d(off)

t

f

- 8.75.8

-

24.5 37

- 11 16.5

Rev 3.4 Page 3

2008-09-02

SPD18P06P G

Electrical Characteristics, at

Dynamic Characteristics

Gate to source charge

V

= -48 ,

DD

I

= -18.6 A

D

Gate to drain charge

V

= -48 V,

DD

I

= -18.6 A

D

Gate charge total

V

= -48 V,

DD

I

= -18.6 ,

D

V

= 0 to -10 V

GS

Gate plateau voltage

V

= -48 ,

DD

I

= -18.6 A

D

T

= 25 °C, unless otherwise specified

j

min. typ. max.

Q

gs

Q

gd

Q

g

V

(plateau)

UnitValuesSymbolParameter

-

nC6.64.4

9.3 14-

22

33-

- -5.56 - V

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

C

Inverse diode direct current,pulsed

T

= 25 °C

C

Inverse diode forward voltage

V

= 0 V,

GS

I

= -18.6 A

F

Reverse recovery time

V

= -30 V,

R

I

=

I

, d

i

F

S

/dt = 100 A/µs

F

Reverse recovery charge

V

= -30 V,

R

I

=

l

, d

i

F

S

/dt = 100 A/µs

F

I

S

I

SM

V

t

rr

Q

SD

rr

- - -18.6 A

- - -74.4

- -1 -1.33 V

- 70 105 ns

- 139 208 nC

Rev 3.4 Page 4

2008-09-02

SPD18P06P G

SPD18P06P

Power dissipation

P

= f (

T

)

C

P

tot

90

W

70

60

50

40

30

20

10

Drain current

I

= f (

T

-20

A

-16

-14

-12

-10

-8

-6

-4

-2

)

C

V

D

parameter:

D

I

GS

³

10 V

0

0 20 40 60 80 100 120 140 160°C190

Safe operating area

I

= f (

V

D

DS

)

parameter : D = 0 ,

2

-10

A

D

I

1

-10

I

/

S

D

V

=

)

n

o

(

S

D

R

0

-10

-1

-10

T

= 25 °C

C

D

0

-10

0

0 20 40 60 80 100 120 140 160°C190

T

C

T

C

Transient thermal impedance

Z

= f (

t

1

0

10

p

single pulse

-7

10

)

t

/

T

p

D = 0.50

0.20

0.10

0.05

0.02

0.01

-6

-5

-4

-3

10

-2

0

s

10

t

p

thJC

parameter : D =

K/W

thJC

Z

10

-1

-2

-3

-4

t

= 29.0µs

p

100 µs

1 ms

10 ms

DC

1

V

DS

-10

2

Rev 3.4 Page 5

2008-09-02

SPD18P06P G

SPD18P06P

Typ. output characteristic

I

= f (

V

);

T

t

p

= 80.00W

tot

=25°C

j

= 80 µs

l

k

j

D

DS

parameter:

-50

P

A

-40

-35

D

I

-30

-25

-20

-15

-10

-5

0

0 -1 -2 -3 -4 -5 -6 -7 -8

V

[V]

GS a -4.0

b -4.5 c -5.0

i

d -5.5

h

e -6.0

g

f -6.5 g -7.0

f

h -7.5 i -8.0

e

j -9.0 k -10.0

d

l -20.0

c

b

a

Typ. drain-source-on-resistance

R

DS(on)

parameter:

DS(on)

R

V

-10

V

DS

= f (

I

)

D

V

GS

0.42

W

a

b

c

d

e

f

g

0.36

0.32

0.28

0.24

0.20

0.16

0.12

0.08

V

[V] =

GS

a

b

c

d

e

f

g

h

0.04

0.00

-4.5

-5.0

-5.5

-6.0

-6.5

-4.0

0 -4 -8 -12 -16 -20 -24 -28 -32A-38

-7.0

-7.5

-8.0

i

-9.0

h

i

j

k

l

j

k

l

-10.0

-20.0

I

D

Typ. transfer characteristics

V

³

2 x

I

x

DS

parameter:

-40

A

-30

-25

D

I

-20

-15

-10

-5

R

D

t

= 80 µs

p

DS(on)max

I

= f (

D

V

GS

)

Typ. forward transconductance

g

= f(

I

);

T

fs

parameter:

10

S

8

7

fs

6

g

5

4

3

2

1

=25°C

D

j

g

fs

0

0 -1 -2 -3 -4 -5 -6 -7 -8

V

-10

V

GS

Rev 3.4 Page 6

0

0 -5 -10 -15 -20

A

-30

I

D

2008-09-02

SPD18P06P G

SPD18P06P

Drain-source on-state resistance

R

DS(on)

parameter :

DS(on)

R

0.38

W

0.32

0.28

0.24

0.20

0.16

0.12

0.08

0.04

= f (

T

)

j

I

= -13.2 A,

D

98%

typ

V

GS

= -10 V

Gate threshold voltage

V

parameter:

V

GS(th)

-5.0

V

-4.4

-4.0

-3.6

GS(th)

-3.2

-2.8

-2.4

-2.0

-1.6

-1.2

-0.8

-0.4

= f (

T V

)

j

GS

=

V

DS

,

I

= -1 mA

D

max

typ

min

0.00

-60 -20 20 60 100 140

Typ. capacitances

C

= f (

V

)

DS

parameter:

10

pF

10

C

10

V

=0V, f=1 MHz

GS

4

3

2

1

0 -5 -10 -15 -20 -25

°C

200

T

j

0.0

-60 -20 20 60 100 140

V

200

T

j

Forward characteristics of reverse diode

I

= f (VSD)

F

parameter:

-10

A

-10

C

iss

C

oss

C

rss

V

-35

V

DS

F

I

-10

-1

-10

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4

T

, tp = 80 µs

j

2

1

0

T

= 25 °C typ

j

T

= 175 °C typ

j

T

= 25 °C (98%)

j

T

= 175 °C (98%)

j

V

-3.0

V

SD

Rev 3.4 Page 7

2008-09-02

SPD18P06P G

SPD18P06P

Avalanche energy

E

= f (

T

AS

para.:

160

mJ

120

AS

100

E

)

j

I

= -18.6 A ,

D

80

60

40

20

V

DD

= -25 V,

R

GS

= 25

Typ. gate charge

V

= f (

GS

Q

parameter:

-16

V

-12

GS

-10

V

-8

-6

-4

-2

)

Gate

I

= -18.6 A pulsed

D

0,2

V

DS max

0,8

V

DS max

0

25 45 65 85 105 125 145

Drain-source breakdown voltage

V

(BR)DSS

V

-72

V

-68

-66

-64

-62

-60

-58

= f (

T

)

j

°C

185

T

j

0

0 4 8 12 16 20 24 28

nC

Q

34

Gate

-56

-54

-60 -20 20 60 100 140

°C

200

T

j

Rev 3.4 Page 8

2008-09-02

Rev 3.4 page 9 2008-09-02

SPD18P06P G

Package outline: PG-TO252-3

SPD18P06P G

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

).

Rev 3.4 Page 10

2008-09-02