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spd09p06plrev2.6
Datasheet
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Datasheet spd09p06plrev2.6 Datasheet

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Page 1
SPD09P06PL G
)
j
j
g
° Qualified according to AEC Q101
SIPMOS

=
==
Feature
P-Channel
• P-channel
Enhancement mode
• Enhancement mode
• Logic Level
Logic Level prueb
• 175°C operating temperature

175°C operating temperature
• Avalanche rated
Avalanche rated
• dv/dt rated
dv/dt rated
• Pb-free lead plating; RoHS compliant
Type Package
SPD09P06PL G PG-TO252-3
Lead free
Yes
Product Summary
V
DS
R
DS(on
I
D
PG-TO252-3
-60 V
0.25
-9.7 A
Gate pin1
Drain pin 2
Source pin 3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Continuous drain current
TC=25°C
T
=100°C
C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=-9.7 A , VDD=-25V, RGS=25
Avalanche energy, periodic limited by T
max
Reverse diode dv/dt
IS=-9.7A, VDS=-48, di/dt=200A/µs, T
jmax
=175°C
Gate source voltage V
Power dissipation
TC=25°C
Symbol Value Unit
I
D
I
D puls
E
AS
E
AR
dv/dt 6 kV/µs
GS
P
tot
-9.7
-6.8
-38.8
70 mJ
4.2
±20
42 W
A
V
Operating and storage temperature T
IEC climatic category; DIN IEC 68-1
Rev 2.6 Page 1
, T
st
-55... +175
°C
55/175/56
2011-10-12
Page 2
SPD09P06PL G
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
R
R
thJC
thJA
thJA
- - 3.6 K/W
- - 100
-
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=-250µA
Gate threshold voltage, VGS = V
I
=-250µA
D
Zero gate voltage drain current
VDS=-60V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
-60 - - V
-1 -1.5 -2
-
-
-
-0.1
75
50
µA
-1
V
=-60V, VGS=0V, Tj=150°C
DS
Gate-source leakage current
VGS=-20V, VDS=0V
Drain-source on-state resistance
VGS=-4.5V, ID=-5.4A
Drain-source on-state resistance
VGS=-10V, ID=-6.8A
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.6 Page 2
I
GSS
R
DS(on)
R
DS(on)
-
-10
-100
- -10 -100 nA
- 0.3 0.4
- 0.2 0.25
2011-10-12
Page 3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
(p
)
SPD09P06PL G
Parameter
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Symbol Conditions Values Unit
min. typ. max.
VDS
fs
iss
oss
rss
d(on)
r
d(off)
f
2*ID*R
DS(on)max
I
=-5.4
D
VGS=0V, VDS=-25V,
f=1MHz
VDD=-30V, VGS=-4.5V,
I
=-5.4, RG=6
D
VDD=-30V, VGS=-4.5V,
I
=-5.4A, RG=6
D
,
1.8 3.5 - S
- 360 450 pF
- 103 130
- 40 50
- 11 17 ns
- 168 252
- 49 74
- 89 134
Gate to source charge
Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
gs
gd
g
S
SM
SD
rr
rr
lateau
VDD=-48V, ID=-9.7A - 1.3 2 nC
- 5.1 7.5
VDD=-48V, ID=-9.7A,
V
=0 to -10V
GS
VDD=-48V, ID=-9.7A - -4.1 - V
TC=25°C - - -9.7 A
- 14 21
- - -38.8
VGS=0V, IF=-9.7A - -1.1 -1.4 V
VR=-30V, I
di
/dt=100A/µs
F
lS,
=
F
- 52 76 ns
- 64 96 nC
Rev 2.6 Page 3
2011-10-12
Page 4
SPD09P06PL G
1 Power dissipation
P
= f (TC)
tot
SPD09P06PL
50
W
40
35
tot
P
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160°C190
2 Drain current
I
= f (TC)
D
parameter: V
SPD09P06PL
-11
A
-9
-8
-7
D
I
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140 160°C190
T
C
GS
10 V
T
C
3 Safe operating area
I
= f ( VDS )
D
parameter : D = 0 , T
2
SPD09P06PL
-10
A
1
-10
D
I
R
-10
-10
-1
0
-10
-1
C
/
S
D
V
=
)
n
o
(
S
D
0
-10
= 25 °C
D
I
-10
4 Transient thermal impedance
Z
= f (tp)
thJC
parameter : D = t
1
SPD09P06PL
10
tp = 11.0µs
100 µs
1 ms
10 ms
DC
1
V
V
DS
-10
2
K/W
0
10
thJC
-1
Z
10
-2
10
single pulse
10-710-610-510-410-310
10
10
-3
-4
/T
p
D = 0.50
0.20
0.10
0.05
0.02
0.01
-2
s
t
0
10
p
Rev 2.6 Page 4
2011-10-12
Page 5
SPD09P06PL G
5 Typ. output characteristic
I
= f (VDS); Tj=25°C
D
parameter: t
SPD09P06PL
-24
A
-20
-18
-16
D
I
-14
-12
-10
-8
-6
-4
-2
0
0 -2 -4 -6 -8
P
tot
= 80 µs
p
= 42W
k
j
VGS [V]
a -2.0
b -2.5
i
c -3.0
d -3.5
e -4.0
h
f -4.5
g -5.0
g
h -5.5
i -6.0
j -7.0
f
k -8.0
e
d
c
b
a
6 Typ. drain-source on resistance
R
DS(on)
parameter: V
R
-12
V
V
DS
= f (ID)
GS
SPD09P06PL
0.8
c
d
e
f
0.6
DS(on)
0.5
0.4
0.3
0.2
V
[V] =
GS
0.1
c
d
e
f
g
-3.0
-3.5
-4.0
-4.5
0
0 -2 -4 -6 -8 -10 -12 -14 -16
-5.0
h
-5.5
-6.0
g
h
i
j
k
i
j
k
-7.0
-8.0
-20
A
I
D
7 Typ. transfer characteristics
I
= f ( VGS ); VDS
D
2 x ID x R
DS(on)max
parameter: tp = 80 µs
25
A
D
I
15
10
5
0
0 1 2 3 4 5 6
V
8 Typ. forward transconductance
g
= f(ID); Tj=25°C
fs
parameter: g
4
S
3
fs
2.5
g
2
1.5
1
0.5
8
V
GS
0
0 1 2 3 4 5 6 7 8
fs
10
V
I
D
Rev 2.6 Page 5
2011-10-12
Page 6
SPD09P06PL G
j
9 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= -6.8 A, VGS = -10 V
D
SPD09P06PL
0.75
0.6
0.55
0.5
DS(on)
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
-60 -20 20 60 100 140
98%
typ
°C
10 Gate threshold voltage
V
parameter: V
200
T
j
= f (Tj)
GS(th)
= VDS, ID = -250 µA
GS
2.4
V
2
1.8
1.6
GS(th)
V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100
98 %
typ.
2 %
°C
180
T
j
11 Typ. capacitances
C = f (V
parameter: V
10
pF
C
10
10
)
DS
=0V, f=1 MHz
GS
3
2
1
0 -5 -10 -15 -20
12 Forward character. of reverse diode
I
= f (VSD)
F
parameter: T
2
SPD09P06PL
-10
C
iss
C
oss
C
rss
V
-30
V
DS
A
1
-10
F
I
0
-10
-1
-10 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
, tp = 80 µs
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
-3
V
V
SD
Rev 2.6 Page 6
2011-10-12
Page 7
SPD09P06PL G
13 Typ. avalanche energy
E
= f (Tj)
AS
par.: I
= -9.7 A , VDD = -25 V, RGS = 25
D
80
mJ
60
AS
50
E
40
30
20
10
0
25 45 65 85 105 125 145
°C
14 Typ. gate charge
V
= f (Q
GS
185
T
j
parameter: I
SPD09P06PL
-16
V
-12
GS
-10
V
-8
-6
-4
-2
0
0 4 8 12 16 20
)
Gate
= -9.7 A pulsed
D
V
0,2
DS max
0,8 V
DS max
nC
Q
28
Gate
15 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (Tj)
SPD09P06PL
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
-60 -20 20 60 100 140
°C
200
T
j
Rev 2.6 Page 7
2011-10-12
Page 8
Rev 2.6 page 8 2011-10-12
SPD09P06PL G
Package outline: PG-TO252-3
Page 9
SPD09P06PL G
Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
).
Rev 2.6 Page 8
2011-10-12
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