Datasheet spd08n10 Datasheet

Preliminary Data

SIPMOS Power Transistor

SPD 08N10

Features

• N channel

• Enhancement mode

• Avalanche rated

v/dt

• d

SPD08N10 Tape and ReelP-TO252 Q67040-S4126 SPU08N10 TubeQ67040-S4118-A2P-TO251

Maximum Ratings, at

rated

= 25 ˚C, unless otherwise specified

T

j

Product Summary

Drain source voltage Drain-Source on-state resistance Continuous drain current 8.4 A

Parameter

V

DS

R

DS(on)

I

D

PackagingType Package Ordering Code

Pin 1 Pin 2 Pin 3

Symbol UnitValue

100

0.3

G D S

V

Ω

Continuous drain current

T

= 25 ˚C

C

T

= 100 ˚C

C

Pulsed drain current

T

= 25 ˚C

C

Avalanche energy, single pulse

I

= 8.4 A,

D

V

DD

= 25 V,

R

= 25 Ω

GS

Avalanche energy, periodic limited by Reverse diode dv/dt

I

= 8.4 A,

S

V

= 80 V, di/dt = 200 A/µs

DS

Gate source voltage Power dissipation

T

= 25 ˚C

C

Operating and storage temperature

T

jmax

I

D

I

Dpulse

E

AS

E

AR

dv/d

V

GS

P

tot

,

T

j

t

stg

8.4

5.4

33.6

30

4 6 kV/µs

±20

40 W

55/150/56IEC climatic category; DIN IEC 68-1

A

mJ

V

˚C-55... +175

Data Sheet 1 06.99

Thermal Characteristics

j

SPD 08N10

Parameter

Characteristics

SMD version, device on PCB: @ min. footprint

2

@ 6 cm

Electrical Characteristics, at

cooling area1)

T

Parameter

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA

D

R R R

thJC thJA thJA

- 3.1 K/WThermal resistance, junction - case

-Thermal resistance, junction - ambient, leded

-

= 25 ˚C, unless otherwise specified

Symbol UnitValues

min. max.typ.

V

(BR)DSS

100 - V

ValuesSymbol Unit

typ. max.min.

- 100

-

75

50

-

Gate threshold voltage,

I

= 1 mA

D

Zero gate voltage drain current

V V

DS DS

= 100 V, = 100 V,

V V

GS GS

= 0 V, = 0 V,

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= 10 V,

GS

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

= 5.4 A

D

V

=

GS

T

= 25 ˚C

j

T

= 125 ˚C

j

V

DS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

-

0.1

-

- 10 nA100

- 0.25 0.3

432.1

µA

1

100

Ω

Data Sheet 2 06.99

SPD 08N10

Electrical Characteristics

, at

Parameter

Dynamic Characteristics

Transconductance

V

≥2*

I

*

DS

R

D

DS(on)max

,

I

= 8.4 A

D

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD

G

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 3 A,

D

= 25 ˚C, unless otherwise specified

T

j

Symbol Values Unit

min. typ. max.

g

fs

C

iss

C

oss

C

rss

t

d(on)

2 4.5 - S

- 340 425 pF

- 80 100

- 30 40

- 13 20 ns

Rise time

V R

DD

G

= 30 V,

= 50 Ω

V

GS

= 10 V,

Turn-off delay time

V R

DD

G

= 30 V,

= 50 Ω

V

GS

= 10 V,

Fall time

V R

DD

G

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 3 A,

D

I

= 3 A,

D

I

= 3 A,

D

t

r

t

d(off)

t

f

- 40 60

- 50 75

- 35 55

Data Sheet 3 06.99

SPD 08N10

j

Electrical Characteristics, at Parameter

Dynamic Characteristics

Gate to source charge

V

= 80 V,

DD

I

= 8.4 A

D

Gate to drain charge

V

= 80 V,

DD

I

= 8.4 A

D

Gate charge total

V

= 80 V,

DD

I

= 8.4 A,

D

V

= 0 to 10 V

GS

Gate plateau voltage

V

= 80 V,

DD

I

= 8.4 A

D

= 25 ˚C, unless otherwise specified

T

Symbol Values Unit

Q

gs

Q

gd

Q

g

V

(plateau)

min. typ. max.

-

- 6.65

2.7 nC1.8

10

- 12.6 18.9

5.93 - V-

Reverse Diode

Inverse diode continuous forward current

T

= 25 ˚C

C

Inverse diode direct current,pulsed

T

= 25 ˚C

C

Inverse diode forward voltage

V

= 0 V,

GS

I

= 16.8 A

F

Reverse recovery time

V

= 30 V,

R

I

=

I

, d

i

F

S

/dt = 100 A/µs

F

Reverse recovery charge

V

= 30 V,

R

=

I

l

, d

i

F

S

/dt = 100 A/µs

F

I

V

t

Q

S

SM

SD

rr

- - 8.4 A

- - 33.6

- 1.2 V1.6

- 90 ns135

- µC0.35 0.55

Data Sheet 4 06.99

SPD 08N10

Power Dissipation

P

= f (

T

SPD08N10

5

)

C

tot

P

45

W

35

30

tot

25

20

15

10

Drain current

I

= f (

T

10

A

8

7

6

5

4

3

2

1

)

C

V

SPD08N10

D

parameter:

D

I

GS

≥ 10 V

0

0 20 40 60 80 100 120

Safe operating area

I

= f (

V

2

A

1

0

)

DS

D

= 0 ,

SPD08N10

DS(on)

R

=

I

/

DS

V

D

parameter :

10

D

I

10

T

= 25 ˚C

C

D

t

= 15.0µs

p

DC

100 µs

1 ms

10 ms

˚C

160

T

C

0

0 20 40 60 80 100 120

˚C

160

T

C

Transient thermal impedance

Z

= f (

t

SPD08N10

1

0

)

p

D = t

single pulse

/

T

p

D = 0.50

0.20

0.10

0.05

0.02

0.01

thJC

parameter :

10

K/W

10

thJC

Z

-1

10

-2

10

-1

10

0

10

1

10

2

V

DS

10

3

10

-3

-7

-6

-5

-4

-3

-2

10

s

10

t

p

Data Sheet 5 06.99

0

SPD 08N10

Typ. output characteristics

I

= f (

V

D

parameter:

D

I

)

DS

t

= 80 µs

p

SPD08N10

20

P

= 40W

tot

A

16

14

12

10

8

6

4

2

0

0 2 4 6 8

l

k

j

i

Typ. transfer characteristics

t

parameter:

V

≥ 2 x

DS

= 80 µs

p

I

x

D

R

DS(on) max

I

g

e

c

a

D

V

h

f

d

b

= f (

[V]

GS a 4.0

b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0

V

DS

V

GS

12

)

Typ. drain-source-on-resistance

R

DS(on)

parameter:

= f (

I

)

D

V

GS

SPD08N10

1.0

Ω

b

c

d

e

0.8

0.7

DS(on)

0.6

R

0.5

0.4

0.3

0.2

V

[V] =

GS

0.1

b

c

d

e

f

4.5

5.0

5.5

6.0

0.0 0 2 4 6 8 10 12 14

6.5

7.0

g

7.5

f

g

h

i

j

8.0

9.0

Typ. forward transconductance

gfs = f(I

parameter:

);

T

D

= 25˚C

j

g

fs

k

10.0

20.0

I

h

i

j

k

l

A

17

D

30

A

24 22 20

D

I

18 16 14 12 10

8 6 4 2 0

0 1 2 3 4 5 6 7 8

V

10

V

GS

6

S

4

s

f

g

3

2

1

0

0 2 4 6 8 10 12 14 16

A

20

I

D

Data Sheet 6 06.99

SPD 08N10

Drain-source on-resistance

R

DS(on)

parameter :

R

= f (

T

)

j

I

= 5.4 A,

D

SPD08N10

1.0

Ω

0.8

0.7

DS(on)

0.6

0.5

0.4

0.3

0.2

0.1

0.0

-60 -20 20 60 100

98%

typ

V

GS

= 10 V

Typ. capacitances

˚C

Gate threshold voltage

V

parameter :

180

T

j

= f (

T

V

)

j

GS

=

V

DS

,

GS(th)

5.0

V

4.4

4.0

3.6

3.2

GS(th)

V

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

-60 -20 20 60 100

I

= 1 mA

D

˚C

max

typ

min

160

T

j

Forward characteristics of reverse diode

f

(VDS)

C = parameter:

3

10

pF

C

2

10

1

10

0 5 10 15 20 25 30

V

= 0 V, f = 1 MHz

GS

V

Ciss

Coss

Crss

DS

40

I

= f (

F

V

SD

parameter:

SPD08N10

2

10

A

1

10

F

I

0

10

-1

10

0.0 0.4 0.8 1.2 1.6 2.0 2.4

)

T

,

t

= 80 µs

j

p

T

= 25 ˚C typ

j

T

= 150 ˚C typ

j

T

= 25 ˚C (98%)

j

T

= 150 ˚C (98%)

j

V

3.0

V

SD

Data Sheet 7 06.99

SPD 08N10

Avalanche Energy

I

parameter:

R

= 25 Ω

GS

35

mJ

25

AS

E

20

15

10

5

= 8.4 A,

D

E

AS

= f (

V

DD

T

)

j

= 25 V

Typ. gate charge

V

=

f (Q

GS

parameter:

SPD08N10

16

V

12

10

GS

V

8

6

4

2

Gate

I

D puls

)

= 8.4 A

V

0,2

DS max

0,8

V

DS max

0

20 40 60 80 100 120

Drain-source breakdown voltage

V

(BR)DSS

V

= f (

T

)

j

SPD08N10

120

V

114 112 110 108 106 104 102 100

98 96 94 92 90

-60 -20 20 60 100

˚C

0

160

T

j

180

T

j

0 2 4 6 8 10 12 14 16nC19

Q

Gate

Data Sheet 8 06.99