Datasheet spd08n05 Datasheet

SIPMOS PowerTransistor

SPD 08N05L

Features

• N channel

• Enhancement mode

• Avalanche rated

Product Summary

Drain source voltage Drain-Source on-state resistance Continuous drain current 8.4 A

• Logic Level

• d

v/dt

rated

• 175˚C operating temperature

SPD08N05L Tape and ReelP-TO252 Q67040-S4134 SPU08N05L TubeQ67040-S4182-A2P-TO251

MaximumRatings ,at

T

= 25 ˚C, unless otherwise specified

j

Parameter

V

DS

R

DS(on)

I

D

PackagingType Package Ordering Code

Pin1 Pin2 Pin3

Symbol UnitValue

55

0.1

G D S

V

Ω

Continuous drain current

T

=25˚C

C

= 100 ˚C

T

C

Pulsed drain current

T

=25˚C

C

Avalanche energy, single pulse

= 8.4 A,

I

D

V

DD

=25V,

R

GS

=25Ω

Avalanche energy, periodic limited by Reverse diode dv/d

I

= 8.4 A,

S

T

jmax

V

DS

= 175 ˚C

t

=40V,di/dt= 200 A/µs,

Gate source voltage Power dissipation

T

=25˚C

C

Operating and storage temperature

T

jmax

I

D

I

Dpulse

E

AS

E

AR

dv/d

V

GS

P

tot

,

T

j

t

stg

8.4

5.9 34

35

2.4 6 kV/µs

±20 V

24 W

55/175/56IEC climatic category; DIN IEC 68-1

A

mJ

˚C-55... +175

Data Sheet 1 06.99

Thermal Characteristics

SPD 08N05L

Parameter

Characteristics

SMD version, device on PCB: @ min. footprint

2

@ 6 cm

Electrical Characteristics, at

cooling area1)

T

Parameter

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA

D

R R R

thJC thJA thJA

- 6.25 K/WThermal resistance, junction - case

-Thermal resistance, junction - ambient, leded

-

= 25 ˚C, unless otherwise specified

j

Symbol UnitValues

min. max.typ.

V

(BR)DSS

55 - V

ValuesSymbol Unit

typ. max.min.

- 100

-

75

50

-

Gate threshold voltage,

I

= 10 µA

D

Zero gate voltage drain current

V V

DS DS

= 50 V, = 50 V,

V V

GS GS

= 0 V, = 0 V,

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= 4.5 V,

GS

V

= 10 V,

GS

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

= 5.9 A

D

I

= 5.9 A

D

V

=

GS

T

= 25 ˚C

j

T

= 150 ˚C

j

V

DS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

-

0.1

-

- 10 nA100

-

0.125

-

0.08

21.61.2

µA

1

100

Ω

0.15

0.1

Data Sheet 2 06.99

SPD 08N05L

Electrical Characteristics, at Parameter

Dynamic Characteristics

Transconductance

V

≥2*

I

*

DS

R

D

DS(on)max

,

I

= 5.9 A

D

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD

G

= 30 V,

= 25 Ω

V

GS

= 4.5 V,

I

= 8.4 A,

D

= 25 ˚C, unless otherwise specified

T

j

Symbol Values Unit

min. typ. max.

g

fs

C

iss

C

oss

C

rss

t

d(on)

3 6.2 - S

- 250 315 pF

- 80 100

- 45 56

- 20 30 ns

Rise time

V R

DD

G

= 30 V,

= 25 Ω

V

GS

= 4.5 V,

Turn-off delay time

V R

DD

G

= 30 V,

= 25 Ω

V

GS

= 4.5 V,

Fall time

V R

DD

G

= 30 V,

= 25 Ω

V

GS

= 4.5 V,

I

= 8.4 A,

D

I

= 8.4 A,

D

I

= 8.4 A,

D

t

r

t

d(off)

t

f

- 40 60

- 25 40

- 20 30

Data Sheet 3 06.99

SPD 08N05L

Electrical Characteristics, at Parameter

Dynamic Characteristics

Gate to source charge

V

= 40 V,

DD

I

= 8.4 A

D

Gate to drain charge

V

= 40 V,

DD

I

= 8.4 A

D

Gate charge total

V

= 40 V,

DD

I

= 8.4 A,

D

V

= 0 to 10 V

GS

Gate plateau voltage

V

= 40 V,

DD

I

= 8.4 A

D

T

= 25 ˚C, unless otherwise specified

j

Symbol Values Unit

Q

gs

Q

gd

Q

g

V

(plateau)

min. typ. max.

-

- 3.5

1.5 nC1

5.4

- 9 14

4 - V-

Reverse Diode

Inverse diode continuous forward current

T

= 25 ˚C

C

Inverse diode direct current,pulsed

T

= 25 ˚C

C

Inverse diode forward voltage

V

= 0 V,

GS

I

= 16.8 A

F

Reverse recovery time

V

= 30 V,

R

I

=

I

, d

i

F

S

/dt = 100 A/µs

F

Reverse recovery charge

V

= 30 V,

R

=

I

l

, d

i

F

S

/dt = 100 A/µs

F

I

V

t

Q

S

SM

SD

rr

- - 8.4 A

- - 34

- 1.05 V1.8

- 50 ns75

- µC0.085 0.13

Data Sheet 4 06.99

SPD 08N05L

Power Dissipation

P

= f (

T

SPD08N05L

8 6 4 2

)

C

tot

P

tot

26

W

22 20 18 16 14 12 10

Drain current

I

= f (

T

10

A

8

7

6

5

4

3

2

1

)

C

V

SPD08N05L

D

parameter:

D

I

GS

≥ 10 V

0

0 20 40 60 80 100 120 140 160˚C190

Safe operating area

I

= f (

V

SPD08N05L

2

A

1

0

DS

)

D

= 0 ,

DS(on)

R

=

V

D

parameter :

10

D

I

10

T

= 25 ˚C

C

D

I

/

DS

T

C

t

= 2.7µs

p

DC

10 µs

100 µs

1 ms

10 ms

0

0 20 40 60 80 100 120 140 160˚C190

Transient thermal impedance

Z

= f (

t

SPD08N05L

1

0

)

p

D = t

single pulse

/

T

p

thJC

parameter :

10

K/W

10

thJC

Z

-1

10

-2

10

T

D = 0.50

0.20

0.10

0.05

0.02

0.01

C

10

-1

10

-1

10

0

10

1

V

DS

10

2

10

-3

-7

-6

-5

-4

-3

-2

10

s

10

t

p

Data Sheet 5 06.99

0

SPD 08N05L

Typ. output characteristics

I

= f (

V

D

parameter:

D

I

)

DS

t

= 80 µs

p

SPD08N05L

20

P

= 24W

tot

A

16

14

12

10

8

6

4

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

l

k

j

i

g

h

Typ. transfer characteristics

t

parameter:

V

≥ 2 x

DS

25

= 80 µs

p

I

x

D

R

DS(on)max

I

e

c

a

D

V

GS a 2.5

b 3.0 c 3.5

f

d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5

d

j 7.0 k 8.0 l 10.0

b

= f (

[V]

V

DS

GS

5.0

)

Typ. drain-source-on-resistance

R

DS(on)

parameter:

= f (

I

)

D

V

GS

SPD08N05L

0.50

Ω

b

0.40

0.35

DS(on)

0.30

R

0.25

0.20

0.15

0.10

V

GS

0.05

b

3.0

0.00 0 2 4 6 8 10 12

[V] =

c

3.5

4.0

c

d

4.5

d

e

f

5.0

5.5

e

g

h

i

6.0

6.5

7.0

Typ. forward transconductance

gfs = f(I

parameter:

);

T

D

8

= 25˚C

j

g

fs

f

g

h j

i

k

l

j

k

l

8.0

10.0

A

16

I

D

A

S

D

15

I

10

5

0

0 1 2 3 4 5 6

V

8

V

GS

fs

g

4

2

0

0 2 4 6 8 10

A

14

I

D

Data Sheet 6 06.99

SPD 08N05L

Drain-source on-resistance

R

DS(on)

parameter :

R

= f (

T

)

j

I

0.55

SPD08N05L

= 5.9 A,

D

V

GS

Ω

0.45

0.40

0.35

DS(on)

0.30

0.25

0.20

0.15

0.10

0.05

0.00

-60 -20 20 60 100 140

98%

typ

= 4.5 V

Typ. capacitances

˚C

Gate threshold voltage

V

parameter :

200

T

j

= f (

T

V

)

j

GS

=

V

DS

,

I

GS(th)

3.0

V

2.4

2.2

2.0

GS(th)

V

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-60 -20 20 60 100 140

= 10 µA

D

˚C

max

typ

min

200

T

j

Forward characteristics of reverse diode

C = f (VDS)

parameter:

3

10

pF

C

2

10

1

10

0 5 10 15 20 25 30

V

= 0 V, f = 1 MHz

GS

I

= f (VSD)

F

T

,

t

parameter:

SPD08N05L

2

10

A

C

iss

C

oss

C

rss

V

40

V

DS

1

10

F

I

0

10

-1

10

0.0 0.4 0.8 1.2 1.6 2.0 2.4

j

= 80 µs

p

T

= 25 ˚C typ

j

T

= 175 ˚C typ

j

T

= 25 ˚C (98%)

j

T

= 175 ˚C (98%)

j

V

3.0

V

SD

Data Sheet 7 06.99

SPD 08N05L

Avalanche Energy

I

parameter:

R

= 25 Ω

GS

40

mJ

30

25

AS

E

20

15

10

5

= 8.4 A,

D

E

AS

= f (

V

DD

T

)

j

= 25 V

Typ. gate charge

V

=

f (Q

GS

parameter:

SPD08N05L

16

V

12

10

GS

V

8

6

4

2

Gate

I

D puls

)

0,2

= 8.4 A

V

DS max

0,8

V

DS max

0

20 40 60 80 100 120 140

Drain-source breakdown voltage

V

(BR)DSS

V

66

V

64

62

60

58

56

54

=

f (T

SPD08N05L

)

j

˚C

0

180

T

j

0 2 4 6 8 10

nC

Q

14

Gate

52

50

-60 -20 20 60 100 140

˚C

200

T

j

Data Sheet 8 06.99