Datasheet spd07n20 Datasheet

Preliminary Data

SIPMOS Power Transistor

SPD 07N20

Features

• N channel

• Enhancement mode

• Avalanche rated

v/dt

• d

SPD07N20 Tape and ReelP-TO252 Q67040-S4120 SPU07N20 TubeQ67040-S4112-A2P-TO251

Maximum Ratings, at

rated

T

= 25 ˚C, unless otherwise specified

j

Product Summary

Drain source voltage Drain-Source on-state resistance Continuous drain current 7 A

Parameter

V

DS

R

DS(on)

I

D

PackagingType Package Ordering Code

Pin 1 Pin 2 Pin 3

Symbol UnitValue

200

0.4

G D S

V

Ω

Continuous drain current

T

= 25 ˚C

C

T

= 100 ˚C

C

Pulsed drain current

T

= 25 ˚C

C

Avalanche energy, single pulse

I

= 7 A,

D

V

DD

= 50 V,

R

GS

= 25 Ω

Avalanche energy, periodic limited by Reverse diode dv/dt

I

= 7 A,

S

T

jmax

V

DS

= 175 ˚C

= 160 V, di/dt = 200 A/µs,

Gate source voltage Power dissipation

T

= 25 ˚C

C

Operating and storage temperature

T

jmax

I

D

I

Dpulse

E

AS

E

AR

dv/d

V

GS

P

tot

,

T

j

t

stg

7

4.5 28

120

4 6 kV/µs

±20

40 W

55/150/56IEC climatic category; DIN IEC 68-1

A

mJ

V

˚C-55... +175

Data Sheet 1 06.99

Thermal Characteristics

SPD 07N20

Parameter

Characteristics

SMD version, device on PCB: @ min. footprint @ 6 cm

2

cooling area1)

Electrical Characteristics, at Parameter

Static Characteristics

R

thJC

R

thJA

R

thJA

T

= 25 ˚C, unless otherwise specified

j

Symbol UnitValues

ValuesSymbol Unit

typ. max.min.

- 3.1 K/WThermal resistance, junction - case

-Thermal resistance, junction - ambient, leded

-

- 100

-

min. max.typ.

75

50

Drain- source breakdown voltage

V

= 0 V,

GS

Gate threshold voltage,

I

= 1 mA

D

I

= 0.25 mA

D

V

GS

=

V

DS

Zero gate voltage drain current

V V

DS DS

= 200 V, = 200 V,

V V

= 0 V,

GS

= 0 V,

GS

T

= 25 ˚C

j

T

= 125 ˚C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= 10 V,

GS

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

= 4.5 A

D

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

200 - V

-

- 10 nA100

- 0.3 0.4

-

0.1

-

432.1

µA

1

100

Ω

Data Sheet 2 06.99

SPD 07N20

Electrical Characteristics

, at

Parameter

Dynamic Characteristics

Transconductance

V

≥2*

I

*

DS

R

D

DS(on)max

,

I

= 4.5 A

D

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD

G

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 3 A,

D

= 25 ˚C, unless otherwise specified

T

j

Symbol Values Unit

min. typ. max.

g

fs

C

iss

C

oss

C

rss

t

d(on)

3 4.2 - S

- 400 530 pF

- 85 130

- 45 70

- 10 15 ns

Rise time

V R

DD

G

= 30 V,

= 50 Ω

V

GS

= 10 V,

Turn-off delay time

V R

DD

G

= 30 V,

= 50 Ω

V

GS

= 10 V,

Fall time

V R

DD

G

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 3 A,

D

I

= 3 A,

D

I

= 3 A,

D

t

r

t

d(off)

t

f

- 40 60

- 55 75

- 30 40

Data Sheet 3 06.99

SPD 07N20

Electrical Characteristics, at Parameter

Dynamic Characteristics

Gate to source charge

V

= 160 V,

DD

I

= 7 A

D

Gate to drain charge

V

= 160 V,

DD

I

= 7 A

D

Gate charge total

V

= 160 V,

DD

I

= 7 A,

D

V

= 0 to 10 V

GS

Gate plateau voltage

V

= 160 V,

DD

I

= 7 A

D

T

= 25 ˚C, unless otherwise specified

j

Symbol Values Unit

Q

gs

Q

gd

Q

g

V

(plateau)

min. typ. max.

-

- 10

7.5 nC5

22.5

- 21 31.5

7 - V-

Reverse Diode

Inverse diode continuous forward current

T

= 25 ˚C

C

Inverse diode direct current,pulsed

T

= 25 ˚C

C

Inverse diode forward voltage

V

= 0 V,

GS

I

= 14 A

F

Reverse recovery time

V

= 100 V,

R

I

=

I

, d

i

F

S

/dt = 100 A/µs

F

Reverse recovery charge

V

= 100 V,

R

=

I

l

, d

i

F

S

/dt = 100 A/µs

F

I

V

t

Q

S

SM

SD

rr

- - 7 A

- - 28

- 1.3 V1.7

- 200 ns300

- µC0.6 0.9

Data Sheet 4 06.99

SPD 07N20

Power Dissipation

P

= f (

T

tot

P

45

W

35

30

tot

25

20

15

10

)

C

SPD07N20

5

0

0 20 40 60 80 100 120

˚C

Drain current

I

= f (

T

D

parameter:

D

I

160

T

C

)

C

V

≥ 10 V

GS

SPD07N20

7.5

A

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0 0 20 40 60 80 100 120

˚C

160

T

C

Safe operating area

I

= f (

V

2

A

1

0

-1

10

)

DS

D

= 0 ,

SPD07N20

DS(on)

R

0

=

I

/

DS

V

10

D

parameter :

10

D

I

10

T

= 25 ˚C

C

D

1

10

DC

2

t

= 22.0µs

p

100 µs

1 ms

10 ms

V

Transient thermal impedance

Z

= f (

t

SPD07N20

1

0

-7

10

)

p

D = t

single pulse

-6

10

/

T

p

D = 0.50

0.20

0.10

0.05

0.02

0.01

-5

-4

-3

10

-2

s

t

0

10

p

thJC

parameter :

10

K/W

10

thJC

Z

-1

10

-2

10

-3

3

10

V

DS

10

Data Sheet 5 06.99

SPD 07N20

Typ. output characteristics

I

= f (

V

D

parameter:

D

I

)

DS

t

= 80 µs

p

SPD07N20

17

P

= 40W

tot

A

14

12

10

8

6

4

2

0

0 2 4 6 8

l

j

i

k

f

h

g

Typ. transfer characteristics

t

parameter:

V

≥ 2 x

DS

13

A

= 80 µs

p

I

x

D

R

DS(on) max

I

e

c

a

D

d

b

= f (

[V]

V

GS a 4.0

b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0

V

DS

GS

11

)

Typ. drain-source-on-resistance

R

DS(on)

parameter:

= f (

I

)

D

V

GS

SPD07N20

1.3

Ω

a

1.1

1.0

0.9

DS(on)

0.8

R

0.7

0.6

0.5

0.4

0.3

0.2

V

GS

a

0.1

4.0

0.0 0 2 4 6 8

[V] =

b

4.5

5.0

b

c

d

5.5

6.0

c

e

6.5

d

f

g

h

7.0

7.5

8.0

Typ. forward transconductance

gfs = f(I

parameter:

);

T

D

6

= 25˚C

j

g

fs

e

f

g

k

h

j

l

i

j

k

9.0

A

l

10.0

20.0

12

I

D

11 10

9 8

D

I

7 6 5 4 3 2 1 0

0 1 2 3 4 5 6 7 8

V

10

V

GS

S

4

fs

g

3

2

1

0

0 2 4 6 8 10 12 14 16 18A21

I

D

Data Sheet 6 06.99

SPD 07N20

Drain-source on-resistance

R

DS(on)

parameter :

R

1.8

Ω

1.4

1.2

DS(on)

1.0

0.8

0.6

0.4

0.2

= f (

SPD07N20

T

)

j

I

= 4.5 A,

D

98%

typ

V

GS

= 10 V

Gate threshold voltage

V

parameter :

GS(th)

5.0

V

4.4

4.0

3.6

3.2

GS(th)

V

2.8

2.4

2.0

1.6

1.2

0.8

0.4

= f (

T

)

j

V

=

V

GS

DS

,

I

= 1 mA

D

max

typ

min

0.0

-60 -20 20 60 100 140

Typ. capacitances

f

(VDS)

C =

V

parameter:

4

10

pF

3

10

C

2

10

1

10

0 5 10 15 20 25 30

= 0 V, f = 1 MHz

GS

˚C

V

0.0

200

T

j

-60 -20 20 60 100

˚C

160

T

j

Forward characteristics of reverse diode

I

= f (

V

F

parameter:

10

F

I

C

iss

C

oss

C

rss

40

V

DS

10

)

SD

T

,

t

= 80 µs

j

SPD07N20

2

A

1

0

-1

0.0 0.4 0.8 1.2 1.6 2.0 2.4

p

T

= 25 ˚C typ

j

T

= 150 ˚C typ

j

T

= 25 ˚C (98%)

j

T

= 150 ˚C (98%)

j

V

3.0

V

SD

Data Sheet 7 06.99

SPD 07N20

Avalanche Energy

I

parameter:

R

= 25 Ω

GS

130

mJ

110 100

90

AS

80

E

70 60 50 40 30 20 10

= 7 A,

D

E

AS

V

= f (

= 50 V

DD

T

)

j

Typ. gate charge

V

=

f (Q

GS

parameter:

SPD07N20

16

Gate

I

D puls

)

= 7 A

V

12

GS

V

10

V

0,2

DS max

8

6

4

2

0,8

V

DS max

0

20 40 60 80 100 120

Drain-source breakdown voltage

V

(BR)DSS

V

245

V

235 230 225 220 215 210 205 200 195

= f (

SPD07N20

T

)

j

˚C

0

160

T

j

0 4 8 12 16 20 24 28

nC

Q

34

Gate

190 185 180

-60 -20 20 60 100

˚C

180

T

j

Data Sheet 8 06.99