Datasheet spb80p06pgrev1.6 Datasheet

SIPMOS Power-Transistor

° Pb-free lead plating: RoHS compliant

° Halogen-free according to IEC61249-2-21

SPB80P06P G

Features

P-Channel

·

Enhancement mode

Avalanche rated

·

v/dt

·

d

rated

175°C operating temperature

Type Package

SPB80P06P G

Maximum Ratings,at

PG-TO263-3

T

= 25 °C, unless otherwise specified

j

Parameter

Continuous drain current

Product Summary

Drain source voltage

Drain-source on-state resistance Continuous drain current A

Lead free

Yes

V R I

D

Pin 1

G

DS

DS(on)

PIN 2/4

-60

0.023

-80

D

Symbol UnitValue

I

D

A

V

W

PIN 3

S

T

25 °C, 1)

C =

T

= 100 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche energy, single pulse

I

= -80 A ,

D

V

DD

= -25 V,

R

GS

= 25

W

Avalanche energy, periodic limited by

v/dt

I

= -80 A,

S

T

= 175 °C

jmax

V

= -48 , di/dt = 200 A/µs,

DS

Gate source voltage Power dissipation

T

= 25 °C

C

Operating and storage temperature

T

jmax

I

D puls

E

AS

E

AR

dv/d

V

GS

P

tot

,

T

j

t

T

stg

-80

-64

-320

823 mJ

34

6Reverse diode d

±20 V 340 W

-55...+175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

kV/µs

1

Current limited by bondwire; with an

Rev 1.5 Page 1

R

= 0.4 K/W the chip is able to carry

thJC

I

= -91A

D

2011-09-01

Thermal Characteristics

SPB80P06P G

Parameter

Symbol UnitValues

min. max.typ.

Characteristics

R

thJC

Thermal resistance, junction - ambient, leaded SMD version, device on PCB:

R R

thJA thJA

@ min. footprint @ 6 cm

2

cooling area

Electrical Characteristics, at Parameter

1)

T

= 25 °C, unless otherwise specified

j

Symbol Values Unit

min. typ. max.

Static Characteristics

- 0.4-Thermal resistance, junction - case K/W

- 62

-

62 40

Drain- source breakdown voltage

V

= 0 V,

GS

Gate threshold voltage,

I

= -5.5 mA

D

I

= -250 µA

D

V

GS

=

V

Zero gate voltage drain current

V V

V

DS DS

GS

= -60 V, = -60 V,

= -20 V,

V V

V

= 0 V,

GS

= 0 V,

GS

= 0 V

DS

T

= 25 °C

j

T

= 150 °C

j

Drain-source on-state resistance

V

= -10 V,

GS

I

= -64 A

D

DS

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

-60 - V-

-2.1 -3 -4

-

-0.1

-10

-1

-100

- -10 -100Gate-source leakage current

- 0.021 0.023

µA

nA

W

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev 1.5 Page 2

2011-09-01

SPB80P06P G

Electrical Characteristics, at Parameter

Dynamic Characteristics

Transconductance

2*

V

³

I

*

DS

R

D

DS(on)max

,

I

D

= -64 A

Input capacitance

V

= 0 V,

GS

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

V

= -25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD

G

= 1

= -30 V,

W

V

GS

= -10 V,

I

= -64 A,

D

T

= 25 °C, unless otherwise specified

j

Symbol Values Unit

min. typ. max.

g

fs

C

iss

C

oss

C

rss

t

d(on)

18

4026 5033 pF-

- 15651252Output capacitance

-

- 36 ns24

S-36

546437

Rise time

V R

DD

G

= 1

= -30 V,

W

V

GS

= -10 V,

Turn-off delay time

V R

DD

G

= 1

= -30 V,

W

V

GS

= -10 V,

Fall time

V R

DD

G

= 1

= -30 V,

W

V

GS

= -10 V,

I

= -64 A,

D

I

= -64 A,

D

I

= -64 A,

D

t

r

t

d(off)

t

f

- 2718

-

56 84

- 30 45

Rev 1.5 Page 3

2011-09-01

SPB80P06P G

Electrical Characteristics, at

Dynamic Characteristics

Gate to source charge

V

= -48 V,

DD

I

= -80 A

D

Gate to drain charge

V

= -48 V,

DD

I

= -80 A

D

Gate charge total

V

= -48 V,

DD

I

= -80 A,

D

V

= 0 to -10 V

GS

Gate plateau voltage

V

= -48 V ,

DD

I

= -80 A

D

T

= 25 °C, unless otherwise specified

j

min. typ. max.

Q

gs

Q

gd

Q

g

V

(plateau)

ValuesSymbolParameter

-

50 75-

115

173-

- -6.2 - V

Unit

nC4127.4

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

C

Inverse diode direct current,pulsed

T

= 25 °C

C

Inverse diode forward voltage

V

= 0 V,

GS

I

= -80 A

F

Reverse recovery time

V

= -30 V,

R

I

=

I

, d

i

F

S

/dt = 100 A/µs

F

Reverse recovery charge

V

= -30 V,

R

I

=

l

, d

i

F

S

/dt = 100 A/µs

F

I

S

I

SM

V

t

rr

Q

SD

rr

- - -80 A

- - -320

- -1.2 -1.6 V

- 117 175 ns

- 420 630 nC

Rev 1.5 Page 4

2011-09-01

SPP80P06P

SPB80P06P G

Power dissipation

P

= f (

T

)

C

P

tot

360

W

280

240

200

160

120

80

40

Drain current

I

= f (

T

-90

A

-70

-60

-50

-40

-30

-20

-10

)

C

V

D

parameter:

D

I

GS

³

10 V

0

0 20 40 60 80 100 120 140 160°C190

Safe operating area

I

= f (

V

D

parameter :

-10

A

-10

D

I

-10

)

DS

D

= 0 ,

3

2

V

=

)

n

o

(

S

D

R

1

T

= 25 °C

C

D

I

/

S

D

T

C

t

= 14.0µs

p

DC

100 µs

1 ms

10 ms

0

0 20 40 60 80 100 120 140 160°C190

Transient thermal impedance

Z

= f (

t

1

0

)

p

D = t

single pulse

/

T

p

thJC

parameter :

10

K/W

10

-1

10

thJC

Z

-2

10

-3

10

-4

10

T

D = 0.50

0.20

0.10

0.05

0.02

0.01

C

0

-10

-1

-10

0

-10

1

V

DS

-10

2

Rev 1.5 Page 5

10

-5

10

-7

-6

-5

-4

-3

10

-2

0

s

10

t

p

2011-09-01

SPP80P06P

SPB80P06P G

Typ. output characteristic

I

= f (

V

);

T

t

= 80 µs

p

= 340.00W

tot

=25°C

j

k

j

D

DS

parameter:

-190

P

A

-160

-140

-120

D

I

-100

-80

-60

-40

-20

0

0 -1 -2 -3 -4 -5 -6 -7 -8

V

GS

a -4.0 b -4.5 c -5.0

i

d -5.5 e -6.0

h

f -6.5 g -7.0

g

h -7.5 i -8.0

f

j -9.0 k -10.0

e

d

c

b

a

[V]

Typ. drain-source-on-resistance

R

DS(on)

parameter:

DS(on)

R

V

-10

V

DS

= f (

I

)

D

V

GS

0.075

W

b

c

d

e

f

0.060

0.055

0.050

0.045

0.040

0.035

0.030

0.025

0.020

0.015

V

0.010

0.005

0.000

[V] =

GS

b

c

d

e

f

-4.5

-5.0

-5.5

-6.0

0 -20 -40 -60 -80 -100 -120

-6.5

g

-7.0

g

h

-7.5

-8.0

h

i

j

k

-9.0

-10.0

j

k

A

-160

I

D

Typ. transfer characteristics

V

³

2 x

I

x

DS

parameter:

-80

A

-60

-50

D

I

-40

-30

-20

-10

R

D

t

= 80 µs

p

DS(on)max

I

D

= f (

V

GS

)

Typ. forward transconductance

g

= f(

I

);

T

fs

parameter:

50

=25°C

D

j

g

fs

S

40

35

fs

g

30

25

20

15

10

5

0

0 -1 -2 -3 -4 -5 -6 -7 -8

V

-10

V

GS

Rev 1.5 Page 6

0

0 -10 -20 -30 -40 -50 -60 -70 -80

2011-09-01

A

-100

I

D

SPP80P06P

SPB80P06P G

Drain-source on-state resistance

R

DS(on)

parameter :

DS(on)

R

= f (

T

)

j

I

0.070

= -64 A,

D

V

GS

W

0.060

0.055

0.050

0.045

0.040

0.035

0.030

0.025

0.020

0.015

0.010

0.005

0.000

-60 -20 20 60 100 140

98%

typ

= -10 V

°C

Gate threshold voltage

V

parameter:

V

200

T

j

= f (

T V

)

j

GS

=

V

DS

,

I

D

GS(th)

-5.0

V

98%

-4.0

-3.5

GS(th)

-3.0

-2.5

typ

2%

-2.0

-1.5

-1.0

-0.5

0.0

-60 -20 20 60 100 140

= -5.5 mA

°C

200

T

j

Typ. capacitances

C

= f (

V

)

DS

parameter:

10

pF

10

C

10

V

=0V, f=1 MHz

GS

5

4

3

2

0 -5 -10 -15

V

Forward characteristics of reverse diode

I

= f (VSD)

F

parameter:

3

10

A

2

10

F

I

C

iss

C

oss

C

rss

-25

V

DS

1

10

0

10

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4

, t

T

j

p = 80 µs

T

= 25 °C typ

j

T

= 175 °C typ

j

T

= 25 °C (98%)

j

T

= 175 °C (98%)

j

V

-3.0

V

SD

Rev 1.5 Page 7

2011-09-01

SPP80P06P

SPB80P06P G

Avalanche energy

E

= f (

T

AS

para.:

850

mJ

700

600

AS

E

500

400

300

200

100

)

j

I

= -80 A ,

D

V

= -25 V,

DD

R

GS

= 25

Typ. gate charge

V

=

GS

W

parameter:

-16

V

-12

GS

-10

V

-8

-6

-4

-2

f (Q

)

Gate

I

= -80 A pulsed

D

V

0,2

DS max

0,8

V

DS max

0

25 45 65 85 105 125 145

Drain-source breakdown voltage

V

(BR)DSS

V

-72

V

-68

-66

-64

-62

-60

-58

= f (

T

)

j

°C

185

T

j

0

0 20 40 60 80 100 120 140

nC

Q

180

Gate

-56

-54

-60 -20 20 60 100 140

°C

200

T

j

Rev 1.5 Page 8

2011-09-01

SPB80P06PG

Rev 1.5

2011-09-01

PG-TO220-3

Page 9

SPB80P06PG

Rev 1.5

2011-09-01

PG-TO263-3

Page 10

SPB80P06P G

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

).

Rev 1.5 Page 11

2011-09-01