Datasheet spb18p06p_rev1.5 Datasheet

SPB18P06P G

° Halogen-free according to IEC61249-2-21

• Pb-free lead plating; RoHS compliant

Non dry

SIPMOS® Power-Transistor

Product Summary

Features

• P-Channel

• Enhancement mode

• Avalanche rated

• dv /dt rated

• 175°C operating temperature

Type Package Tape and reel information Marking Lead free Packing

SPB18P06PG PG-TO263-3 Yes

Maximum ratings, at T

=25 °C, unless otherwise specified

j

1000 pcs / reel 18P06P

Parameter Symbol Conditions Unit

V

DS

R

DS(on),max

I

D

-60 V

0.13

-18.6 A

PG-TO263-3

Value

Ω

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by
T

jmax

I

D

I

D,pulse

E

AS

E

AR

Reverse diode dv /dt dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

V

GS

P

tot

T

, T

j

ESD class

Soldering temperature

TA=25 °C

T

=100 °C

A

TA=25 °C

ID=18.7 A, RGS=25 Ω

I

=18.7 A, VDS=48 V,

D

di /dt =-200 A/µs,

T

=175 °C

j,max

TA=25 °C

stg

steady state

-18.7

-13.2

-74.8

151

8

-6

±20

81.1

"-55 ... +175"

260 °C

A

mJ

kV/µs

V

W

°C

IEC climatic category; DIN IEC 68-1

Rev 1.4 page 1 2008-07-09

55/175/56

SPB18P06P G

.

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance,
junction - case

Thermal resistance,
junction - ambient,leaded

SMD verson, device on PCB:

Electrical characteristics, at T

R

thJC

R

thJA

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 62 K/W

2

cooling area

6 cm

- - 1.85 K/W

--62

1)

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

V

(BR)DSSVGS

V

GS(th)

=0 V, ID=-250 µA

VDS=VGS, ID=-

1000 µA

-60 - - V

-2.1 3 -4

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Transconductance

1)

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection.

FCB is vertical without blown air

I

DSS

I

GSS

R

DS(on)VGS

g

fs

VDS=-60 V, VGS=0 V,
T

=25 °C

j

V

=-60 V, VGS=0 V,

DS

T

=150 °C

j

VGS=-20 V, VDS=0 V

=-10 V, ID=-13.2 A

|VDS|>2|ID|R

I

=-13.2 A

D

DS(on)max

- -0.1 -1 µA

- -10 -100

- -10 -100 nA

- 101 130

,

510-S

mΩ

Rev 1.4 page 2 2008-07-09

SPB18P06P G

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

=0 V, VDS=-25 V,

V

GS

f =1 MHz

VDD=-30 V, VGS=­10 V, I
R

=2.7 Ω

G

=-13.2 A,

D

- 690 860 pF

- 230 290

- 95 120

-1218ns

- 5.8 8.7

-253737

- 11 16.5

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=-48 V, ID=-

DD

18.6 A, V

=0 to -10 V

GS

- -4.1 -5.5 nC

- -11 -17

- -21 -28

Gate plateau voltage

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

- -5.94 - V

- - -18.6 A

=25 °C

T

A

- - -74.8

VGS=0 V, IF=18.6 A,
T

=25 °C

j

- -0.99 -1.33 V

- 70 105 ns

=30 V, IF=|IS|,

V

R

di

/dt =100 A/µs

rr

F

- 139 208 nC

Rev 1.4 page 3 2008-07-09

1 Power dissipation 2 Drain current

P

=f(TA) ID=f(TA); |VGS|≥10 V

tot

18

75

16

SPB18P06P G

60

14

12

[W]

tot

P

45

30

[A]

D

-I

10

8

6

4

15

2

0

0 40 80 120 160

TA [°C]

0

0 40 80 120 160

TA [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

=f(VDS); TA=25 °C; D =0 Z

D

parameter: t

10

p

2

10 µs

=f(tp)

thJA

parameter: D =tp/T

1

10

10

100 µs

1 ms

10 ms

DC

1

10

2

10

[K/W]

thJS

Z

10

0

0.5

0.2

0.1

0.05

0.02

-1

10

0.01

-5

-4

single pulse

10

10

-3

10

10

10

10

0

-1

-2

2

1

10

tp [s]

limited by on-state
resistance

1

10

0

[A]

10

D

-I

-1

10

-2

10

10

-1

10

0

-VDS [V]

Rev 1.4 page 4 2008-07-09

5 Typ. output characteristics 6 Typ. drain-source on resistance

I

=f(VDS); Tj=25 °C R

D

parameter: V

GS

=f(ID); Tj=25 °C

DS(on)

parameter: V

GS

SPB18P06P G

]

Ω

[m

DS(on)

R

500

450

400

350

300

250

200

-4 V

-4.5 V

-5 V

-5.5 V

-6 V

[A]

D

-I

25

20

15

10

-20V

-10 V

-7V

-6 V

-5.5 V

-5 V

150

5

-4.5 V

-4 V

0

012345

-VDS [V]

100

50

0

0 5 10 15 20 25 30 35

-ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I

=f(VGS); |VDS|>2|ID|R

D

parameter: T

j

DS(on)max

gfs=f(ID); Tj=25 °C

-7 V

-10 V

-20 V

14

12

10

8

[A]

D

-I

6

4

125 °C

2

25 °C

0

0123456

-VGS [V]

14

12

10

8

[S]

fs

g

6

4

2

0

0 5 10 15 20

-ID [A]

Rev 1.4 page 5 2008-07-09

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

=f(Tj); ID=-13.2 A; VGS=-10 V V

DS(on)

=f(Tj); VGS=VDS; ID=-1000 µA

GS(th)

SPB18P06P G

300

5

4.5

]

Ω

[m

DS(on)

R

250

200

150

100

50

98 %

typ.

[V]

GS(th)

-V

4

3.5

3

2.5

2

1.5

1

max.

typ.

min.

0.5

0

-60 -20 20 60 100 140 180

Tj [°C]

0

-60 -20 20 60 100 140 180

Tj [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V

); VGS=0 V; f =1 MHz IF=f(VSD)

DS

parameter: T

j

175 °C, typ

25 °C, 98%

1

10

3

10

C [pF]

2

10

1

10

0 5 10 15 20 25

Ciss

Crss

-VDS [V]

Coss

175 °C, 98%

0

10

[A]

F

I

10

10

-1

-2

25 °C, typ

0 0.5 1 1.5 2 2.5 3

-VSD [V]

Rev 1.4 page 6 2008-07-09

13 Avalanche characteristics 14 Typ. gate charge

V

IAS=f(tAV); RGS=25 Ω

parameter: T

10

[A]

10

AV

-I

j(start)

2

1

125 °C

100 °C

25 °C

=f(Q

GS

parameter: V

[V]

GS

V

); ID=-18.6 A pulsed

gate

DD

16

14

12

10

8

6

4

2

12 V

SPB18P06P G

30 V

48 V

0

10

10

0

10

1

10

tAV [µs]

15 Drain-source breakdown voltage

V

=f(Tj); ID=-250 µA

BR(DSS)

70

65

[V]

60

BR(DSS)

-V

55

0

2

10

3

0 10203040

Q

[nC]

gate

50

-60 -20 20 60 100 140 180

Tj [°C]

Rev 1.4 page 7 2008-07-09

SPB18P06P G

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com

Warnings

Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.

).

Rev 1.4 page 8 2008-07-09