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spb11n60c3_rev26
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Datasheet spb11n60c3_rev26 Datasheet

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Page 1
SPB11N60C3
)
j
A
j
A
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Type
SPB11N60C3
Package
PG-TO263
Ordering Code
Q67040-S4396
VDS @ T
Marking
11N60C3
R
DS(on
max
650 V
0.38 Ω
I
D
11 A
PG-TO263
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
max
Avalanche energy, single pulse
I
=5.5A, V
D
Avalanche energy, repetitive t
=11A, V
I
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
jmax
max
2)
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
Symbol Value Unit
SPB
I
D
A
11
7
I
Dpuls
E
AS
E
AR
I
R
GS
V
GS
P
tot
33 A
340 mJ
0.6
11 A
±20 V
±30
125 W
Operating and storage temperature
Reverse diode dv/dt dv/dt 15 V/ns
Rev. 2.6 Page 1
7)
T
T
,
st
-55...+150 °C
2007-12-14
Page 2
Maximum Ratings
)
SPB11N60C3
Parameter
Drain Source voltage slope
V
= 480 V, I
DS
= 11 A, T
D
= 125 °C
j
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
thJC
- - 1 K/W
- -
Thermal resistance, junction - ambient, leaded
R
thJA
- - 62
- -
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
Soldering temperature, reflow soldering, MSL1
R
T
thJA
sold
-
-
-
35
62
-
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 600 - - V
GS
V
=0V, ID=11A - 700 -
GS
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
ID=500µA, VGS=V
VDS=600V, V T
=25°C
j
T
=150°C
j
VGS=30V, V V
=10V, ID=7A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.86 -
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
DS
-
-
-
-
0.1
-
0.34
0.92
µA
1
100
Ω
0.38
-
Rev. 2.6 Page 2
2007-12-14
Page 3
Electrical Characteristics
(
)
SPB11N60C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C Output capacitance C Reverse transfer capacitance C
Effective output capacitance,
5)
C
energy related
Effective output capacitance,
6)
C
time related
Turn-on delay time t Rise time t Turn-off delay time t Fall time t
fs
iss oss rss
o(er)
o(tr)
d(on) r d(off) f
V
≥2*ID*R
DS
I
=7A
D
VGS=0V, V f=1MHz
V
=0V,
GS
V
=0V to 480V
DS
VDD=380V, V
I
=11A,
D
R
=6.8Ω
G
DS
DS(on)max
=25V,
=0/10V,
GS
min. typ. max.
,
- 8.3 - S
- 1200 - pF
- 390 -
- 30 -
- 45 -
- 85 -
- 10 - ns
- 5 -
- 44 70
- 5 9
Gate Charge Characteristics
Gate to source charge Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
6
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
Q
gs gd
g
plateau
=400V, V
V
=480V, ID=11A - 5.5 - nC
DD
V
=480V, ID=11A,
DD
V
=0 to 10V
GS
V
=480V, ID=11A - 5.5 - V
DD
peak<VBR, DSS
, Tj<T
j,max
oss
oss
.
while V
while V
- 22 -
- 45 60
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev. 2.6 Page 3
2007-12-14
Page 4
Electrical Characteristics
SPB11N60C3
Parameter
Symbol Conditions Values Unit
min. typ. max.
T
Inverse diode continuous
I
S
=25°C - - 11 A
C
forward current
Inverse diode direct current,
I
SM
- - 33
pulsed
Inverse diode forward voltage V
Reverse recovery time t Reverse recovery charge Q Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
=0V, IF=I
GS
V
=480V, IF=IS ,
R
di
/dt=100A/µs
F
T
=25°C - 1200 - A/µs
j
S
- 1 1.2 V
- 400 600 ns
- 6 - µC
- 41 - A
V
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPB SPB
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.015 K/W C
0.03 C
0.056 C
0.197 C
0.216 C
0.083 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0001878 Ws/K
0.0007106
0.000988
0.002791
0.007285
0.063
External Heatsink
T
case
amb
Rev. 2.6 Page 4
2007-12-14
Page 5
SPB11N60C3
1 Power dissipation
P
= f (T
tot
tot
P
140
W
120
110
100
90
80
70
60
50
40
30
20
10
)
C
SPP11N60C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (T
tot
35
W
25
tot
P
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
= f ( VDS )
I
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
0
10
10
-1
-2
10
10
C
1
=25°C
10
4 Safe operating area FullPAK
= f (V
I
D
parameter: D = 0, T
10
A
10
D
I
10
10
2
V
3
10
V
DS
10
)
DS
= 25°C
C
2
1
0
tp = 0.001 ms tp = 0.01 ms
0
tp = 0.1 ms tp = 1 ms tp = 10 ms DC
10
1
10
2
V
3
10
V
DS
-1
-2
10
Rev. 2.6 Page 5
2007-12-14
Page 6
SPB11N60C3
5 Transient thermal impedance
Z
= f (tp)
thJC
10
/T
p
D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
-6
10
-5
10
-4
10
-3
parameter: D = t
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
10
-7
10
6 Transient thermal impedance FullPAK
Z
= f (t
thJC
parameter: D = t
10
K/W
10
thJC
Z
10
10
10
-1
10
s
t
p
10
)
p
/t
p
1
0
-1
D = 0.5 D = 0.2
-2
-3
-4
10-710-610-510-410-310-210
D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
-1
1
10
s
t
p
7 Typ. output characteristic
= f (VDS); T
I
D
parameter: t
40
A
32
28
D
I
24
20
16
12
8
4
0
0 3 6 9 12 15 18 21
=25°C
= 10 µs, V
p
GS
20V 10V 8V
7V
6,5V
6V
5,5V
5V
4,5V
V
V
DS
27
8 Typ. output characteristic
= f (VDS); T
I
D
parameter: t
22
A
18
16
14
D
I
12
10
8
6
4
2
0
0 5 10 15
=150°C
= 10 µs, V
p
GS
20V 8V 7V
7.5V
V
6V
5.5V
5V
4.5V
4V
V
DS
25
Rev. 2.6 Page 6
2007-12-14
Page 7
SPB11N60C3
9 Typ. drain-source on resistance
R
DS(on)
parameter: T
R
=f(I
)
D
=150°C, V
2
GS
Ω
4.5V
4V
1.6
DS(on)
1.4
1.2
1
0.8
0.6
0.4 0 2 4 6 8 10 12 14 16
5V 5.5V
6.5V 8V 20V
6V
A
10 Drain-source on-state resistance
R
DS(on)
parameter : I
R
20
I
D
= f (Tj)
= 7 A, V
D
SPP11N60C3
2.1
Ω
1.8
1.6
1.4
DS(on)
1.2
1
0.8
0.6
98%
0.4
0.2
0
-60 -20 20 60 100
GS
typ
= 10 V
°C
180
T
j
11 Typ. transfer characteristics
= f ( VGS ); VDS≥ 2 x ID x R
I
D
DS(on)max
parameter: tp = 10 µs
40
A
32
28
D
I
24
20
16
12
8
4
0
0 2 4 6 8 10 12
25°C
150°C
V
12 Typ. gate charge
= f (Q
V
GS
parameter: I
SPP11N60C3
16
V
12
GS
10
V
8
6
4
2
15
V
GS
0
0 10 20 30 40 50
)
Gate
= 11 A pulsed
D
0,2
V
DS max
0,8 V
DS max
nC
Q
70
Gate
Rev. 2.6 Page 7
2007-12-14
Page 8
SPB11N60C3
j
13 Forward characteristics of body diode
I
= f (VSD)
F
parameter: T
2
SPP11N60C3
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
14 Typ. switching time
t = f (I
par.: V
), inductive load, T
D
=380V, VGS=0/+13V, R
DS
70
ns
60
55
50
45
t
40
35
30
25
20
15
10
5
0
0 2 4 6 8
tf
tr
=125°C
td(off)
td(on)
=6.8Ω
G
A
12
I
D
15 Typ. switching time
t = f (R par.: V
t
), inductive load, T
G
DS
350
=380V, V
=0/+13V, ID=11 A
GS
ns
250
200
150
100
50
0
0 10 20 30 40 50
=125°C
td(off) td(on) tr tf
Ω
R
16 Typ. drain current slope
di/dt = f(R par.: V
3000
), inductive load, T
G
=380V, V
DS
GS
=0/+13V, ID=11A
A/µs
2000
di/dt
1500
1000
500
70
G
0
0 20 40 60 80
di/dt(on)
= 125°C
di/dt(off)
120
Ω
R
G
Rev. 2.6 Page 8
2007-12-14
Page 9
SPB11N60C3
17 Typ. drain source voltage slope
dv/dt = f(R par.: V
140
V/ns
120
110
100
90
dv/dt
80
70
60
50
40
30
20
10
), inductive load, T
G
=380V, V
DS
dv/dt(off)
0 10 20 30 40 50
=0/+13V, ID=11A
GS
dv/dt(on)
= 125°C
18 Typ. switching losses
E = f (I
par.: V
mWs
E
70
Ω
R
G
), inductive load, T
D
=380V, VGS=0/+13V, R
DS
0.04
*) Eon includes SPD06S60 diode commutation losses
0.03
0.025
0.02
0.015
0.01
0.005
0
0 2 4 6 8
Eon*
Eoff
=125°C
=6.8Ω
G
A
12
I
D
19 Typ. switching losses
E = f(R par.: V
mWs
E
), inductive load, T
G
=380V, V
DS
0.24
*) Eon includes SPD06S60 diode commutation losses
0.16
0.12
0.08
0.04
0
0 10 20 30 40 50
=0/+13V, ID=11A
GS
Eoff
=125°C
Eon*
20 Avalanche SOA
= f (tAR)
I
AR
par.: T
I
70
Ω
R
G
≤ 150 °C
11
A
9
8
7
AR
6
5
4
3
2
1
0
10-310-210-110010110
T
(START)
j
=125°C
T
2
(START)
j
=25°C
µs
t
AR
10
4
Rev. 2.6 Page 9
2007-12-14
Page 10
SPB11N60C3
21 Avalanche energy
E
= f (T
AS
par.: I
mJ
AS
E
350
250
200
150
100
)
= 5.5 A, V
D
50
0
20 40 60 80 100 120
DD
= 50 V
°C
22 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
160
T
j
= f (T
SPP11N60C3
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
)
°C
180
T
j
23 Avalanche power losses
= f (f )
P
AR
parameter: E
300
W
200
AR
P
150
100
50
0
4
10
=0.6mJ
AR
10
5
Hz
24 Typ. capacitances
C = f (V parameter: V
10
pF
10
C
10
10
6
10
f
10
)
DS
=0V, f=1 MHz
GS
4
C
iss
3
2
1
C
rss
0
0 100 200 300 400
C
oss
V
600
V
DS
Rev. 2.6 Page 10
2007-12-14
Page 11
SPB11N60C3
25 Typ. C
E
=f(V
oss
7.5
µJ
6
5.5
5
oss
E
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 100 200 300 400
stored energy
oss
)
DS
V
600
V
DS
Definition of diodes switching characteristics
Rev. 2.6 Page 11
2007-12-14
Page 12
PG-TO263
SPB11N60C3
Rev. 2.6 Page 12
2007-12-14
Page 13
SPB11N60C3
Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
).
Rev. 2.6 Page 13
2007-12-14
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