Datasheet spb08p06p_rev1.6 Datasheet

SPB08P06P G

° Halogen-free according to IEC61249-2-21

SIPMOS® Power-Transistor

Product Summary

Features

• P-Channel

• Enhancement mode

• Avalanche rated

• dv /dt rated

• 175°C operating temperature

• Pb-free lead finishing; RoHS compliant

Type Package Tape and reel information Marking Lead free Packing

SPB08P06PG

PG-TO263-3 Yes

Maximum ratings, at T

=25 °C, unless otherwise specified

j

1000 pcs / reel 08P06P Non dry

V

DS

R

DS(on),max

I

D

-60 V

0.3

-8.8 A

PG-TO263-3

Ω

Parameter Symbol Conditions Unit

Value

steady state

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

I

D

I

D,pulse

E

AS

Reverse diode dv /dt dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

V

GS

P

tot

T

, T

j

TA=25 °C

T

=100 °C

A

TA=25 °C

ID=8.83 A, RGS=25 Ω

I

=8.83 A, VDS=48 V,

D

di /dt =-200 A/µs,

T

=175 °C

j,max

TA=25 °C

stg

-8.8

-6.3

-35.32

70

-6

±20

42

"-55 ... +175"

A

mJ

kV/µs

V

W

°C

ESD class

Soldering temperature

IEC climatic category; DIN IEC 68-1

260 °C

55/150/56

Rev 1.5 page 1 2008-07-09

SPB08P06P G

.

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

Electrical characteristics, at T

R

thJC

R

thJA

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 62 K/W

2

cooling area

6 cm

- - 3.6 K/W

--62

1)

--40

Static characteristics

Drain-source breakdown voltage

V

(BR)DSSVGS

=0 V, ID=-250 µA

-60 - - V

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Transconductance

1)

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.

PCB is vertical without blown air

V

GS(th)

I

DSS

I

GSS

R

DS(on)VGS

g

fs

VDS=VGS, ID=-250 µA

VDS=-60 V, VGS=0 V, T

=25 °C

j

V

=-60 V, VGS=0 V,

DS

T

=150 °C

j

VGS=-20 V, VDS=0 V

=-10 V, ID=-6.2 A

|VDS|>2|ID|R

I

=-6.2 A

D

DS(on)max

-2.1 3 -4

- -0.1 -1 µA

- -10 -100

- -10 -100 nA

- 221 300

,

2.4 4.8 - S

mΩ

Rev 1.5 page 2 2008-07-09

SPB08P06P G

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

t

iss

oss

rss

d(on)

r

d(off)

f

=0 V, VDS=-25 V,

V

GS

f =1 MHz

VDD=-30 V, VGS=10 V, I R

=6 Ω

G

=-6.2 A,

D

- 335 420 pF

- 105 135

-6595

-1624ns

-4669

-4872

-1421

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=-48 V, ID=-8.8 A,

DD

V

=0 to -10 V

GS

- -1.9 -2.6 nC

--5-8

- -10 -13

Gate plateau voltage

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

--6-V

- - -8.8 A

=25 °C

T

A

- - -35.3

VGS=0 V, IF=-8.83 A, T

=25 °C

j

- -1 -1.55 V

-6090ns

=30 V, IF=|IS|,

V

R

di

/dt =100 A/µs

rr

F

- 100 150 nC

Rev 1.5 page 3 2008-07-09

1 Power dissipation 2 Drain current

P

=f(TA) ID=f(TA); |VGS|≥10 V

tot

SPB08P06P G

50

40

30

[W]

tot

P

20

10

0

0 40 80 120 160

TA [°C]

10

8

6

[A]

D

-I

4

2

0

0 40 80 120 160

TA [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

=f(VDS); TA=25 °C; D =0 Z

D

parameter: t

10

p

2

10 µs

=f(tp)

thJA

parameter: D =tp/T

1

10

limited by on-state resistance

1

10

0

[A]

10

D

-I

-1

10

-2

10

-1

10

0

-VDS [V]

10

100 µs

1 ms

10 ms

100 ms

DC

[K/W]

thJS

Z

1

10

2

10

0

-1

10

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

-5

10

-4

10

2

1

0

-1

-2

-3

tp [s]

Rev 1.5 page 4 2008-07-09

5 Typ. output characteristics 6 Typ. drain-source on resistance

I

=f(VDS); Tj=25 °C R

D

parameter: V

GS

20

18

-20 V

-10 V

16

-7 V

14

12

[A]

D

10

-I

8

6

4

2

-6 V

-5.5 V

-5 V

-4.5 V

-4 V

0

02468

-VDS [V]

=f(ID); Tj=25 °C

DS(on)

parameter: V

1000

900

800

-4 V

700

]

Ω

[m

DS(on)

R

-4.5 V

600

500

400

300

200

100

0

0 2 4 6 8 10 12 14 16 18

GS

-5 V

-5.5 V

-6 V

-ID [A]

SPB08P06P G

-37V

-10 V

-20 V

7 Typ. transfer characteristics 8 Typ. forward transconductance

I

=f(VGS); |VDS|>2|ID|R

D

parameter: T

j

8

6

[A]

4

D

-I

2

0

0123456

DS(on)max

125 °C

25 °C

-VGS [V]

gfs=f(ID); Tj=25 °C

6

5

4

[S]

3

fs

g

2

1

0

0246810

-ID [A]

Rev 1.5 page 5 2008-07-09

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

=f(Tj); ID=-6.2 A; VGS=-10 V V

DS(on)

=f(Tj); VGS=VDS; ID=-250 µA

GS(th)

SPB08P06P G

[V]

GS(th)

-V

4.5

3.5

2.5

4

3

max.

typ.

min.

2

]

Ω

[m

DS(on)

R

800

700

600

500

98 %

400

300

1.5

Tj [°C]

typ.

1

0.5

0

-60 -20 20 60 100 140 180

Tj [°C]

200

100

0

-60 -20 20 60 100 140 180

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V

); VGS=0 V; f =1 MHz IF=f(VSD)

DS

parameter: T

j

175 °C, typ

25 °C, 98%

25 °C, typ

-VSD [V]

3

10

C [pF]

2

10

1

10

0 5 10 15 20 25

-VDS [V]

Ciss

Coss

Crss

1

10

175 °C, 98%

0

10

[A]

F

I

-1

10

-2

10

0 0.5 1 1.5 2 2.5 3

Rev 1.5 page 6 2008-07-09

13 Avalanche characteristics 14 Typ. gate charge

V

IAS=f(tAV); RGS=25 Ω

parameter: T

10

j(start)

1

=f(Q

GS

parameter: V

); ID=-8.8 A pulsed

gate

DD

16

14

SPB08P06P G

[A]

AV

-I

25 °C

100 °C

125 °C

12

10

[V]

8

GS

V

6

4

2

10

0

10

0

10

1

10

2

10

3

tAV [µs]

0

0 5 10 15

Q

15 Drain-source breakdown voltage 16 Gate charge waveforms

V

=f(Tj); ID=-250 µA

BR(DSS)

gate

12 V

30 V

48 V

[nC]

70

65

[V]

60

BR(DSS)

-V

55

50

-80 -40 0 40 80 120 160 200

Tj [°C]

Rev 1.5 page 7 2008-07-09

SPB08P06P G

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

).

Rev 1.5 page 8 2008-07-09