Datasheet SPA-2318 Datasheet (SIRENZA)

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

e

Product Description

Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in a
low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent performance
from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver amplifier
for infrastructure equipment in the 1960 and 2140 MHz bands. Its
high linearity makes it an ideal choice for multi-carrier and digital
applications.

The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also manu­factured with green molding compounds that contain no antimony
trioxide nor halogenated fire retardants.

VC1

VBIAS

RFIN

VPC2

Active

Bias

RFOUT/

VC2

SPA-2318

RoHS Compliant

Pb

Green

SPA-2318Z

1700-2200 MHz 1 Watt Power Amp
with Active Bias

Product Features

• Now available in Lead Free, RoHS
Compliant, & Green Packaging

• High Linearity Performance:
+21 dBm IS-95 Channel Pwr at -55 dBc ACP
+20.7 dBm W-CDMA Channel Pwr at -50dBc ACP

+47 dBm Typ. OIP3

• On-chip Active Bias Control

• High Gain: 24 dB T yp. at 1960 MHz

• Patented High Reliability GaAsHBT T echnology

• Surface-Mountable Plastic Package

Applications

• W-CDMA Systems

• PCS Systems

• Multi-Carrier Applications

& Packag

Preliminary

Symbol

ACP

VSWR Input VSWR

OIP

Para m e ters : Tes t Co n d itions :

= 50 Ohms Temp = 25ºC, Vcc = 5.0V

Z

0

f

Frequency of Operation MHz 1700 2200

0

P

Output Power at 1dB Compression

1dB

A d ja c e nt C hanne l Pow e r
IS- 95 @ P
W-CDMA @ P

S

S m all Sig nal G ai n

21

Outp ut Thi rd O rde r Interc ep t Poi nt

3

Power out per tone = +14dBm

NF Noise Fi g ure

Devic e Current

I

CC

Device Voltage

V

CC

R

Therma l Resistance (junction - lead), TL = 85ºC ºC/W 31

th j-l

= 21.0 dB m

OUT

OUT

[1,2]

[1,2]

[1,2]

[1,2]

[1]

= 20.7 dBm

[1,2]

[1]

[2]

f = 1960 MHz
f = 2140 MHz

f = 1960 MHz
f = 2140 MHz

f = 1960 MHz
f = 2140 MHz

f = 1960 MHz
f = 2140 MHz

f = 1960 MHz
f = 2140 MHz

f = 1960 MHz
f = 2140 MHz

Ib ia s = 10 mA

Ic1 = 70 mA

Ic2 = 320 mA

Units Min. Typ. Max.

dBm

dBc -55.0

dB

-

-

dBm

dB

mA 360 400 425

V

22.5

4.75 5.0 5.25

29.5

29.5

-50.0 -47.0

24.0

23.5 25.0

1.6:1

1.6:1

46.5

47.0

5.5

5.5

[1] Optimal ACP tune [2] Optimal IP3 tune

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights
reserved.

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

1

EDS-101432 Rev H

SP A-2318 1700-2200 MHz 1 Watt Power Amp.

ACP Optimized 1960 MHz Application Circuit Dat a, Icc=400mA, Vcc=5V
IS-95, 9 Channels Forward

1960 MHz Adjacent Channel Power

-40

-45

-50

-55

dBc

-60

-65

-70

-75
16 18 20 22 24

vs. Channel Output Power

dBm

25C

-40C
85C

IS-95 CDMA at 1960 MHz

24 dBm

21 dBm

17 dBm

13 dBm

T=25oC

23.75

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

2

EDS-101432 Rev H

SP A-2318 1700-2200 MHz 1 W att Power Amp.

ACP Optimized 1960 MHz Application Circuit Dat a, Icc=400mA, Vcc=5V

31

30

29

28

dBm

27

26

25

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

Input/Output Return Loss,

P1dB vs Frequency

Isolation vs Frequency, T=25

0

-5

-10

-15

-20

dB

-25

-30

-35

-40

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

°°

°C

°°

25C
85C

-40C

S11
S12
S22

30

27

24

dB

21

18

15

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

Device Current vs. Source Voltage

Gain vs. Frequency

600

500

400

300

200

Device Current (mA)

100

0

0123456

25C

-40 C
85C

V

(V)

cc

25C
85C

-40C

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

3

EDS-101432 Rev H

1930 - 1990 MHz Schematic

External Connection

SP A-2318 1700-2200 MHz 1 Watt Power Amp.

Vcc

10uF Tantalum

68pF

Ic1

1
2
3
4

1.0pF

1.5pF(IP3)

1.2nH

6.8K
Ibias

°

, 7.3

Ω

Z=63

18nH

2.2pF(ACP)

300 Ohm

1200pF

Vpc

1930 - 1990 MHz Evaluation Board Layout

Vcc

C5

C4

Short

L2
L1

C3

C1

R1

C2

R2

Vpc

C6
C7

L3

C8

Tune for optimal ACP performance

Sirenza Microdevices
ECB-101161 Rev. C
SOIC-8 PA

Eval Board

1000pF

Ic2

8.2pF

8
7
6
5

Z=50 Ω, 13.2°

20 nH

2.2pF

Tune for optimal ACP performance

Ref. D es. Value Part Numbe r

C1

C2 1200pF, 5% Rohm MCH18 series

C3 1.0pF, ±0.25pF Rohm MCH18 series

C4 68pF, 5% Rohm MCH18 series

C5 10uF, 10% AVX TAJB106K020R

C6 1000pF, 5% Rohm MCH18 series

C7 8.2pF, ±0.5pF Rohm MCH18 series

C8 2.2pF, ±0.25pF Rohm MCH18 series

C9

C9 20pF, 5% Rohm MCH18 series

L1 1.2nH, ±0.3nH Toko LL1608-FS series

L2 18nH, 5% Toko LL1 60 8-FS se rie s

L3 20nH, 5% Coilcraft HQ 0805 series

R1 6.8K Ohm, 5% Rohm MCR03 series

R2 300 Ohm, 5% Rohm MCR03 series

20pF

1.5pF, ±0.25pF (IP3)

2.2pF, ±0.25pF (ACP)

Rohm MCH18 s eries

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

4

EDS-101432 Rev H

SP A-2318 1700-2200 MHz 1 W att Power Amp.

ACP Optimized 2140 MHz Application Circuit Dat a, Icc=400mA, Vcc=5V

W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH,

10.5 dB peak to average @ 0.001% probability

W-CDMA at 2.14 GHz Adjacent Channel Power

vs. Channel Output Power

dBc

-40

-45

-50

-55

-60

-65

-70
16 17 18 19 20 21 22

dBm

W-CDMA at 2.14 GHz

T=25oC

25C

-40C
85C

21.6

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

5

EDS-101432 Rev H

SP A-2318 1700-2200 MHz 1 Watt Power Amp.

ACP Optimized 2140 MHz Application Circuit Data, Icc=400mA, Vcc=5V

31

30

29

28

dBm

27

26

25

2.11 2.12 2.13 2.14 2.15 2.16 2.17

25C
85C

-40C

GHz

Input/Output Return Loss,

P1dB vs Frequency

0

Isolation vs Frequency, T=25

-5

-10

-15

-20

dB

-25

-30

-35

-40

2.11 2.12 2.13 2.14 2.15 2.16 2.17

GHz

°°

°C

°°

S11
S12
S22

30

27

24

dB

21

18

15

2.11 2.12 2.13 2.14 2.15 2.16 2.17

GHz

Device Current vs. Source Voltage

Gain vs. Frequency

600

500

400

300

200

Device Current (mA)

100

0

0123456

25C

-40 C
85C

V

(V)

cc

25C
85C

-40C

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

6

EDS-101432 Rev H

2110 - 2170 MHz Schematic

SP A-2318 1700-2200 MHz 1 W att Power Amp.

Vcc

10uF Tantalum

External Connection

2.7nH

6.8K Ω

1.5pF (IP3)

2.2pF (ACP)

2110 - 2170 MHz Evaluation Board Layout

C2

Short

L2

L1

C1

Note: All induct ors are
Toko LL1608-FS unless
not ed otherw ise

R1

C7

R2

Z=63 Ω , 21.7°

Ic1

5.6nH

1
2
3

Ibias

4

1800pF

300 Ω

Vpc

C6

Tune for optimal ACP performance

Sirenza Microdevices

ECB-101161 Rev. C

C8

Vpc

SOIC-8 PA

Eval Bo ard

Vcc

C3

C4

C5

L3

56pF

1000pF

5.6pF

8
7
6
5

Z=50 Ω, 11.6°

Tune for optimal ACP performance

0.1uF Tantalum

C9

Ic2

18 nH

39pF

1.8pF

Ref. D es. Value Part N umber

1.5pF, ±0.25pF (IP 3)

C1

2.2pF, ±0.25pF (ACP)

C2 56pF, 5% Rohm MCH18 series

C3 10uF, 10% AVX TAJB106K020R

C4 1000pF, 5% Rohm MCH18 series

C5 5.6pF, ±0.5pF Rohm MCH18 series

C6 1.8pF, ±0.25pF Rohm MCH18 series

C7 1800pF, 5% Rohm MCH18 series

C8 0.1uF, 10% Matsuo 267M3502104K

C9 39pF, 5% Rohm MCH18 series

L1 2.7nH, ±0.3nH Toko LL1608-FS series

L2 5.6nH, ±0.3nH Toko LL1608-FS series

L3 18nH, 5% Toko LL1608-FS serie s

R1 6.8 K Ohm, 5% Ro hm MCR03 series

R2 300 Ohm, 5% Rohm MC R0 3 s erie s

Rohm MCH18 s eries

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

7

EDS-101432 Rev H

SP A-2318 1700-2200 MHz 1 Watt Power Amp.

Pin # Function Description

1 VC1 VC 1 is the supply voltage for the first sta ge transistor. The configuration as

shown on application schematic is required for optimum RF performance.

2 Vbias Vbias is the bias control pin for the active bias network. Recommended

configuration is shown in the Application Schematic.

3 RF In RF input pin. This pin requires the use of an external DC blocking capacitor as

shown in the Application Schematic.

4 VPC2 VPC2 is the bias control pin for the active bias network for the second stage.

The recommended co nfiguration is shown in the Appli cati o n Schemati c.

5, 6, 7, 8 RF Out/VC2 RF output and bias pins. Bias should be supplied to this pin through an external

RF choke. Because DC biasing is present on this pi n, a DC blocking capacitor
should be used in most applications (see application schematic). The supply
side of the bias network should be well bypassed. An output matching network is
necessary for optimum performance.

EPAD Gnd Exposed area on the bottom side of the package needs to be soldered to the

ground plane of the board fo r thermal and RF performance. Several vias should
be located under the EPAD as shown in the recommended land pattern (page 9).

Simplified Device Schematic

4

2

ACTIVE BIAS

NETWORK

3

1

2

ACTIVE BIAS

NETWORK

Caution: ESD sensitive

Appropriate precautions in handling, packag­ing and testing devices must be observed.

The Moisture Sensitivity Level rating for this device is level 1
(MSL-1) based on the JEDEC 22-A113 standard classification.
No special moisture packaging/handling is required during

storage, shipment, or installation of the devices.

5-8

Absolute Maximum Ratings

Parameter (Ta = 25ºC) Absolute

Max. Supply Current (I
Max. Supply Current (I

Max. Device Voltage (V
Max. RF Input Power 16 dBm

Ma x. Junct io n Temp. (T
Max. Storage Temp. +150 ºC

Operation of this device beyond any one of these limits
may cause permanent damage. For reliable continuous
operation, the de vice voltage and current must not exce ed
the maximum operating values specified in the table on
page one.

Bias Conditions should also satisfy the following
expression:

) at V

C1

) at V

C2

) at Icc typ. 6.0 V

CC

) +160 ºC

J

I

(max) < (TJ - TL)/Rth,j-l

CCVCC

typ. 150 mA

CC

typ. 750 mA

CC

Limit

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

8

EDS-101432 Rev H

SP A-2318 1700-2200 MHz 1 W att Power Amp.

Package Outline Drawing

(See SMDI MPO-101644 for tolerances, available on our website)

.236 [5.994]

.155 [3.937]

TOP VIEW

.194 [4.928]

SIDE VIEW

876 5

1324

Beveled Edge

.045 [1.143]

.035 [.889]

.016 [.406].050 [1.27]

.061 [1.549]

.008 [.203]

.003 [.076]

SEATING PLANE

BOTTOM VIEW

.058 [1.473]

SEE DETAIL A

.194 [4.93]

.013 [.33] x 45°

.155 [3.937]

END VIEW

EXPOSED PAD

.

0

0

8

PARTING LINE

.025

5°

DETAIL A

Note: DIMENSIONS ARE IN INCHES [MM]

Part Identification Marking

Lot ID
SP A-2318

Lot ID
SP A-2318Z

Part Number Ordering Information

Part Number Reel Size Devices/Reel

SPA-2318 7" 500

SPA-2318Z 7" 500

Recommended Land Pattern

0.150 [3.81]

Plated-Thru Holes

(0.015" Dia, 0.030" Pitch)

Machine

Screws

0.080 [2.03]

0.050 [1. 2 7]

0.140 [3. 5 6]

0.300 [7.62]

0.020 [0.51]

Phone: (800) SMI-MMIC http://www.sirenza.com303 S. Technology Court, Broomfield, CO 80021

9

EDS-101432 Rev H