Datasheet SPA-2118 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SPA-2118 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 850 MHz band.
Its high linearity makes it an ideal choice for multi-carrier and
digital applications.

VC1

VBIAS

RFIN

Active

Bias

RFOUT/

VC2

Preliminary

SPA-2118

850 MHz 1 Watt Power Amplifier
with Active Bias

Product Features

• High Linearity Performance:

+48 dBm Typ. OIP3 at 900 MHz
+24 dBm IS-95 CDMA Channel Power

at -45 dBc ACP

• On-chip Active Bias Control

• High Gain: 32.5 dB Typ.

• Patented High Reliability GaAsHBT Technology

• Surface-Mountable Plastic Package

VPC2

Applications

• IS-95 CDMA Systems

• Multi-Carrier Applications

• AMPS, ISM Applications

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

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EDS-102012 Rev A

SPA-2118 850 MHz 1 Watt Power Amp

850-950 MHz Application Circuit Data, Icc=400mA, T=+25C, Vcc=5V

Note: Tuned for Output IP3

Input/Output Return Loss,

0

Isolation vs Frequency

S22

-10

-20

dBm

-30

-40

S11

S12

-50

0.8 0.85 0.9 0.95 1

GHz

P1dB vs Frequency

36

34

32

dB

30

28

26

0.8 0.85 0.9 0.95 1

GHz

-40C
25C
85C

40

36

32

dB

28

24

0.8 0.85 0.9 0.95 1

56

54
52

50
48

dBm

46
44

42
40

0.8 0.85 0.9 0.95 1

Gain vs. Frequency

GHz

OIP3 vs. Frequency

(P

per tone = 14dBm)

OUT

GHz

Preliminary

Preliminary

-40C
25C
85C

-40C
25C
85C

OIP3 vs Tone Power

56

0.9 GHz

54
52
50
48

dBm

46
44
42
40
38

10 12 14 16 18 20

P

per tone (dBm)

OUT

-40C
25C
85C

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

2

EDS-102012 Rev A

Preliminary

Preliminary

SPA-2118 850 MHz 1 Watt Power Amp

850-950 MHz Application Circuit Data, Icc=400mA, T=+25C, Vcc=5V, IS-95, 9 Channels Forward

880 MHz Adjacent Channel Power vs. Channel Output Power

-40.0

-45.0

-50.0

-55.0

-60.0

-65.0

-70.0

Adjacent Channel Power (dBc)

-75.0

-80.0

-40C
25C
85C

-85.0

Channel Output Power (dBm)

11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

IS-95 CDMA at 880 MHz

+10 dBm

+16 dBm

+24 dBm

+20 dBm

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

3

EDS-102012 Rev A

850 - 950 MHz Schematic

Preliminary

Preliminary

SPA-2118 850 MHz 1 Watt Power Amp

Vcc

10uF Tantalum

Z=63 Ω, 9.5 °

3.9nH

1

6.8K

2

3

4

15pF

360 ohm

850 - 950 MHz Evaluation Board Layout

82pF

3.9nH

15pF

6.8KΩ

82pF

8

7

6

5

1200pF

1200pF

360Ω

2012

1000pF

39pF

Vcc

10uF

1000pF

39pF

33nH

33 nH

Z=50 Ω, 15.1°

100pF

6.8pF

100pF

6.8pF

ECB-101161 Rev. B

SOIC-8 PA

Eval Board

Vpc

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

4

EDS-102012 Rev A

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Preliminary

Preliminary

SPA-2118 850 MHz 1 Watt Power Amp

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Simplified Device Schematic

2

ACTIVE BIAS

NETWO RK

3

1

Absolute Maximum Ratings

Operation of this device above any one of these
parameters may cause permanent damage.

Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/R

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

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4

2

ACTIVE BIAS

NETWO RK

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

5

EDS-102012 Rev A

.035 [.889]

.045 [1.143]

Preliminary

Preliminary

SPA-2118 850 MHz 1 Watt Power Amp

Part Number Ordering Information

rebmuNtraPleeRrePseciveDeziSleeR

8112-APS005"7

Package Outline Drawing

.194 [4.93]

1324

EXPOSED
PAD

XXXX
SPA
2118

.194 [4.928]

PARTING LINE

TOP VIEW

SIDE VIEW

8765

.003 [.076]

.155

[3.937]

.061 [1.549]

.016 [.406].050 [1.27]

.061 [1.549]

.236

[5.994]

.008 [.203]

SEATING PLANE

BOTTOM VIEW

.058 [1.473]

SEE DETAIL A

.013 [.33] x 45°

.155 [3.937]

END VIEW

Recommended Land Pattern

.15 [3.81]

.078

[1.969]

0

.

0

8

.025

5°

Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling
information for Exposed Pad

DETAIL A

TM

SOIC-8 products) to ensure no moisture is trapped in the encapsulated

.24 [6.22]

.05 [1.27]

.02 [.60]

.16 [4.02]

.11 [2.71]

.33 [8.42]

package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening
the sealed shipping materials.

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

6

EDS-102012 Rev A