Datasheet spa20n60cfd_rev1.3 Datasheet

SPA20N60CFD

CoolMOSTMPower Transistor

Features

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

Product Summary

V

DS

R

DS(on),max

1)

I

D

• Extremely low reverse recovery charge

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Periodic avalanche rated

• Qualified for industrial grade applications according to JEDEC

0)

• Pb-free lead plating; RoHS compliant

Type Package Ordering Code Marking

SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD

Maximum ratings, at Tj=25 °C, unless otherwise specified

600 V

0.22

20.7 A

PG-TO220-3-31

"

Parameter Symbol Conditions Unit

Continuous drain current

1)

I

D

TC=25 °C TC=100 °C

Pulsed drain current

2)

Avalanche energy, single pulse

Avalanche energy, repetitive t Avalanche current, repetitive t

AR

Drain source voltage slope dv/dt

Reverse diode dv/dt dv/dt V/ns Maximum diode commutation speed di/dt A/µs

Gate source voltage

2),3)

I

D,pulse

E

AS

E

AR

I

AR

V

GS

TC=25 °C ID=10 A, VDD=50 V

ID=20 A, VDD=50 V

ID=20.7 A, VDS=480 V, Tj=125 °C

IS=20.7 A, VDS=480 V, Tj=125 °C

static V AC (f>1 Hz)

Power dissipation Operating and storage temperature

P

tot

Tj, T

TC=25 °C

stg

Value

20.7

13.1 52

690 mJ

1

20

80

40

900 ±20

±30

35

-55 ... +150

A

V/ns

W °C

Rev. 1.3 page 1 2010-12-21

SPA20N60CFD

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ambient

Soldering temperature, wave solderin

R

thJC

R

thJA

T

sold

leaded - - 62

1.6 mm (0.063 in.) from case for 10 s

- - 3.6 K/W

- - 260 °C

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage Avalanche breakdown voltage

Gate threshold voltage

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

=0 V, ID=250 µA =0 V, ID=20 A

VDS=VGS, ID=1000µA

600 - - V

- 700 -

3 4 5

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

I

R

g

DSS

GSS

DS(on)

G

fs

VDS=600 V, VGS=0 V, Tj=25 °C

VDS=600 V, VGS=0 V, Tj=150 °C

VGS=20 V, VDS=0 V

VGS=10 V, ID=13.1 A, Tj=25 °C

VGS=10 V, ID=13.1 A, Tj=150 °C

- 2.1 - µA

- 1700 -

- - 100 nA

- 0.19 0.22

- 0.43 -

f=1 MHz, open drain - 0.54 |VDS|>2|ID|R

ID=13.1 A

DS(on)max

,

- 17.5 - S

"

Rev. 1.3 page 2 2010-12-21

SPA20N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance Output capacitance Reverse transfer capacitance

Effective output capacitance, energy

4)

)

Turn-on delay time Rise time Turn-off delay time Fall time

C C C

C

t t t t

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

VGS=0 V, VDS=25 V, f=1 MHz

VGS=0 V, VDS=0 V

to 480 V

VDD=380 V, VGS=10 V, ID=20.7 A, RG=3.6 "

- 2400 - pF

- 780 -

- 50 -

- 83 -

- 160 -

- 12 - ns

- 15 -

- 59 -

- 6.4 -

Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage

0)

J-STD20 and JESD22

1)

Limited only by maximum temperature.

2)

Pulse width tplimited byT

3)

Repetitive avalanche causes additional power losses that can be calculated asPAV=EAR*f.

4)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

5)

C

is a fixed capacitance that gives the same charging time asC

o(tr)

j,max

Q Q Q V

gs

gd

g

plateau

VDD=480 V, ID=20.7 A, VGS=0 to 10 V

- 15 - nC

- 54 -

- 95 124

- 7.0 - V

while VDSis rising from 0 to 80% V

oss

while VDSis rising from 0 to 80% V

oss

DSS.

Rev. 1.3 page 3 2010-12-21

SPA20N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Reverse Diode

Diode continuous forward current Diode pulse current

2)

Diode forward voltage

Reverse recovery time Reverse recovery charge Peak reverse recovery current

I

S

I

S,pulse

V

SD

t

rr

Q I

rrm

TC=25 °C

VGS=0 V, IF=20.7 A, Tj=25 °C

VR=480 V, IF=IS,

rr

diF/dt=100 A/µs

- - 20.7 A

- - 52

- 1.0 1.2 V

- 150 - ns

- 1 - µC

- 13 - A

1)

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

R

th1

0.00862 K/W C

th1

0.000205 Ws/K

R

th2

R

th3

R

th4

R

th5

5)

C

th6

R

thCA

0.0471 C

0.119 C

0.476 C

1.57 C

models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if

=0 K/W.

th2

th3

th4

th5

C

th6

0.00198

0.0068

0.0482

0.957

0.1

Rev. 1.3 page 4 2010-12-21

1 Power dissipation 2 Safe operating area

P

=f(TC) ID=f(VDS); TC=25 °C; D=0

TOT

40

30

[W]

20

tot

P

10

0

0 40 80 120 160

TC[°C]

parameter: t

[A]

D

I

10

-1

10

2

1

0

10

p

limited by on-state resistance

10

1

VDS[V]

SPA20N60CFD

1 µs

10 µs

100 µs

10 ms

1 ms

DC

2

10

3

3 Max. transient thermal impedance 4 Typ. output characteristics

Z

=f(tP) ID=f(VDS); Tj=25 °C

thJC

parameter: D=tp/T parameter: V

1

10

0.5

0

10

0.2

0.1

[K/W]

0.05

thJC

0.02

Z

0.01

-1

10

single pulse

-2

10

-4

-5

10

-2

-3

10

0

-1

10

2

1

10

tp[s]

60

50

40

[A]

30

D

I

20

10

0

GS

0 5 10 15 20 25

VDS[V]

5.5 V

10 V

8 V

7.5 V

7 V

6.5 V

6 V

5 V

Rev. 1.3 page 5 2010-12-21

SPA20N60CFD

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID=f(VDS); Tj=150°C R parameter: V

[A]

D

I

GS

40

20 V

7.5 V

30

7 V

20

6.5 V

6 V

10

5.5 V

5 V

4.5 V

0

0 4 8 12 16 20 24 28

VDS[V]

=f(ID); Tj=150 °C

DS(on)

parameter: V

1.5

4.5 V

1.2

0.9

[ ]

DS(on)

R

0.6

0.3

0

0 10 20 30 40

5 V

GS

5.5 V

6 V

6.5 V

ID[A]

7 V

7.5 V 20 V

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=13.1 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

0.6

0.5

0.4

[ ]

0.3

DS(on)

R

0.2

0.1

0

-60 -20 20 60 100 140 180

Tj[°C]

parameter: T

70

60

50

40

[A]

D

I

30

20

10

0

0 4 8 12 16 20

j

DS(on)max

VGS[V]

C °25

C °150

Rev. 1.3 page 6 2010-12-21

SPA20N60CFD

9 Typ. gate charge 10 Forward characteristics of reverse diode

VGS=f(Q

gate

parameter: V

15

10

[V]

GS

V

5

0

0 50 100 150

); ID=20.7 A pulsed IF=f(VSD)

DD

120 V

480 V

Q

[nC]

gate

parameter: T

10

[A]

F

I

-1

10

j

2

25°C, 98%

1

150 °C

150°C 98%

25 °C

0 0.5 1 1.5 2

VSD[V]

11 Avalanche SOA 12 Avalanche energy

IAR=f(tAR) EAS=f(Tj); ID=10 A; VDD=50 V parameter: T

[A]

AV

I

j(start)

20

750

600

15

450

10

125 °C

25 °C

[mJ]

E

AS

300

5

150

0

-3

10

4

3

2

1

0

-1

-2

tAR[µs]

0

20 60 100 140 180

Tj[°C]

Rev. 1.3 page 7 2010-12-21

13 Drain-source breakdown voltage 14 Typ. capacitances

SPA20N60CFD

V

)=f(Tj);ID=10mA C=f(VDS); VGS=0 V; f=1 MHz

BR(DSS

700

660

5

10

4

10

3

10

[V]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

[pF]

C

2

10

1

10

0

10

0 100 200 300 400 500

Tj[°C]

Ciss

Coss

Crss

VDS[V]

15 Typ. C

E

=f(VDS) Qrr=f(Tj); IS=20.7 A

oss

14

12

10

[µJ]

oss

E

stored energy 16 Typ. reverse recovery charge

oss

1.8

1.6

8

[µC]

1.4

rr

6

4

2

0

0 200 400 600

Q

1.2

1

25 50 75 100 125

VDS[V]

Tj[°C]

Rev. 1.3 page 8 2010-12-21

17 Typ. reverse recovery charge 18 Typ. reverse recovery charge

Qrr=f(IS); di/dt=100A/µs Qrr=f(di/dt); ID=20.7 A parameter: T

j

parameter: T

j

SPA20N60CFD

2

1.5

[µC]

1

rr

Q

0.5

0

2 4 6 8 10 12 14 16 18 20

125 °C

25 °C

IS[A]

3.5

3

2.5

[µC]

rr

Q

125 °C

2

1.5

25 °C

1

100 300 500 700 900

di/dt [A/µs]

Rev. 1.3 page 9 2010-12-21

Definition of diode switching characteristics

SPA20N60CFD

Rev. 1.3 page 10 2010-12-21

PG-TO220-3-31: Outline

SPA20N60CFD

Dimensions in mm

Rev. 1.3 page 11 2010-12-21

SPA20N60CFD

Published by Infineon Technologies AG D-81726 München, Germany

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Rev. 1.3 page 12 2010-12-21