Datasheet SPA20N60CFD Datasheet (INFINEON)

SPA20N60CFD

CoolMOSTM Power Transistor

Features

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

Product Summary

V

DS

R

DS(on),max

1)

I

D

• Extremely low reverse recovery charge

• Ultra low gate charge

• Extreme dv /dt rated

• High peak current capability

• Periodic avalanche rated

0)

• Qualified according to JEDEC

for target applications

• Pb-free lead plating; RoHS compliant

Type Package Ordering Code Marking

SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD

600 V

0.22

20.7 A

PG-TO220-3-31

Ω

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

Drain source voltage slope dv /dt

Reverse diode dv /dt dv /dt V/ns

Maximum diode commutation speed di /dt A/µs

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

1)

I

D

TC=25 °C

T

2)

AR

AR

2),3)

2),3)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C

ID=10 A, VDD=50 V

ID=20 A, VDD=50 V

I
V

I
T

V

GS

static V

AC (f >1 Hz)

P

tot

TC=25 °C

=100 °C

C

=20.7 A,

D

=480 V, Tj=125 °C

DS

=20.7 A, VDS=480 V,

S

=125 °C

j

Value

20.7

13.1

52

690 mJ

1

20

80

40

900

±20

±30

35

A

A

V/ns

W

Operating and storage temperature

T

j

stg

-55 ... +150

°C

, T

Rev. 1.2 page 1 2006-05-15

SPA20N60CFD

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ­ambient

Soldering temperature, wave solderin

Electrical characteristics, at T

R

thJC

R

thJA

T

sold

=25 °C, unless otherwise specified

j

leaded - - 62

1.6 mm (0.063 in.)
from case for 10 s

- - 3.6 K/W

- - 260 °C

Static characteristics

Drain-source breakdown voltage

Avalanche breakdown voltage

Gate threshold voltage

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

=0 V, ID=250 µA

=0 V, ID=20 A

VDS=VGS, ID=1000µA

600 - - V

- 700 -

345

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

I

I

R

R

g

DSS

GSS

DS(on)

G

fs

VDS=600 V, VGS=0 V,
T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=13.1 A,
T

=25 °C

j

V

=10 V, ID=13.1 A,

GS

T

=150 °C

j

- 2.1 - µA

- 1700 -

- - 100 nA

- 0.19 0.22

- 0.43 -

f =1 MHz, open drain - 0.54 -

|VDS|>2|ID|R

I

=13.1 A

D

DS(on)max

,

- 17.5 - S

Ω

Rev. 1.2 page 2 2006-05-15

SPA20N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Effective output capacitance, energy

4)

related

Effective output capacitance, time
related5

)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

C

C

t

t

t

t

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=25 V,

V

GS

f =1 MHz

=0 V, VDS=0 V

V

GS

to 480 V

V

=380 V,

DD

V

=10 V, ID=20.7 A,

GS

=3.6 Ω

R

G

- 2400 - pF

- 780 -

-50-

-83-

- 160 -

-12-ns

-15-

-59-

- 6.4 -

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

0)

J-STD20 and JESD22

1)

Limited only by maximum temperature.

2)

Pulse width tp limited by T

3)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

4)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

5)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

j,max

Q

Q

Q

V

gs

gd

g

plateau

=480 V,

V

DD

I

=20.7 A,

D

V

=0 to 10 V

GS

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

-15-nC

-54-

- 95 124

- 7.0 - V

DSS.

DSS.

Rev. 1.2 page 3 2006-05-15

SPA20N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Reverse Diode

Diode continuous forward current

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

I

S

I

S,pulse

V

SD

t

rr

Q

I

rrm

=25 °C

T

C

VGS=0 V, IF=20.7 A,
T

=25 °C

j

V

=480 V, IF=IS,

rr

R

di

/dt =100 A/µs

F

- - 20.7 A

--52

- 1.0 1.2 V

- 150 - ns

-1-µC

-13-A

1)

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

R

th1

0.00862 K/W C

th1

0.000205 Ws/K

R

R

R

R

5)

R

th2

th3

th4

th5

C

thCA

th6

=0 K/W.

0.0471 C

0.119 C

0.476 C

1.57 C

th2

th3

th4

th5

C

th6

0.00198

0.0068

0.0482

0.957

0.1

models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if

Rev. 1.2 page 4 2006-05-15

1 Power dissipation 2 Safe operating area

P

=f(TC) ID=f(VDS); TC=25 °C; D =0

TOT

40

30

[W]

20

tot

P

10

0

0 40 80 120 160

TC [°C]

parameter: t

[A]

D

I

10

10

10

10

2

1

0

-1

p

limited by on-state
resistance

0

10

10

1

VDS [V]

SPA20N60CFD

1 µs

10 µs

100 µs

10 ms

1 ms

DC

10

2

10

3

3 Max. transient thermal impedance 4 Typ. output characteristics

Z

=f(tP) ID=f(VDS); Tj=25 °C

thJC

parameter: D=t

1

10

0.5

0

10

0.2

0.1

[K/W]

0.05

thJC

Z

0.02

-1

10

0.01

single pulse

-2

10

10

/T parameter: V

p

2

1

0

-1

-2

-3

-4

-5

10

10

10

10

10

10

10

tp [s]

GS

60

50

40

30

[A]

D

I

20

10

0

0 5 10 15 20 25

VDS [V]

5.5 V

10 V

8 V

7.5 V

7 V

6.5 V

6 V

5 V

Rev. 1.2 page 5 2006-05-15

SPA20N60CFD

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

=f(VDS); Tj=150°C R

D

parameter: V

GS

=f(ID); Tj=150 °C

DS(on)

parameter: V

GS

1.5

4.5 V

5.5 V

6.5 V

6 V

1.2

5 V

0.9

]

Ω

[

DS(on)

R

0.6

[A]

D

I

40

30

20

20 V

7.5 V

7 V

6.5 V

6 V

10

5.5 V

5 V

4.5 V

0

0 4 8 1216202428

VDS [V]

0.3

0

0 10203040

ID [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=13.1 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

parameter: T

j

DS(on)max

7 V

7.5 V
20 V

0.6

0.5

typ

98 %

70

60

C °25

50

0.4

]

Ω

[

R

0.3

DS(on)

[A]

D

I

40

C °150

30

0.2
20

0.1

0

-60 -20 20 60 100 140 180

Tj [°C]

10

0

0 4 8 12 16 20

VGS [V]

Rev. 1.2 page 6 2006-05-15

SPA20N60CFD

9 Typ. gate charge 10 Forward characteristics of reverse diode

V

=f(Q

GS

parameter: V

); ID=20.7 A pulsed IF=f(VSD)

gate

DD

15

parameter: T

2

10

j

120 V

10

480 V

[V]

GS

V

[A]

F

I

10

1

5

0

0 50 100 150

Q

[nC]

gate

-1

10

0 0.5 1 1.5 2

11 Avalanche SOA 12 Avalanche energy

I

=f(tAR) EAS=f(Tj); ID=10 A; VDD=50 V

AR

parameter: T

20

j(start)

750

150 °C

25°C, 98%

150°C 98%

25 °C

VSD [V]

600

15

450

[A]

10

AV

I

125 °C

25 °C

[mJ]

E

AS

300

5

150

0

10

-3

10

10

10

10

10

10

10

4

3

2

1

0

-1

-2

tAR [µs]

0

20 60 100 140 180

Tj [°C]

Rev. 1.2 page 7 2006-05-15

13 Drain-source breakdown voltage 14 Typ. capacitances

SPA20N60CFD

V

)=f(Tj);ID=10mA C =f(VDS); VGS=0 V; f =1 MHz

BR(DSS

700

660

10

10

10

5

4

3

[V]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

[pF]

C

2

10

1

10

0

10

0 100 200 300 400 500

Tj [°C]

Ciss

Coss

Crss

VDS [V]

15 Typ. C

E

= f(VDS)Q

oss

[µJ]

oss

E

stored energy 16 Typ. reverse recovery charge

oss

=f(Tj); IS=20.7 A

rr

14

12

10

8

6

4

2

0

0 200 400 600

1.8

1.6

1.4

[µC]

rr

Q

1.2

1

25 50 75 100 125

VDS [V]

Tj [°C]

Rev. 1.2 page 8 2006-05-15

17 Typ. reverse recovery charge 18 Typ. reverse recovery charge

Q

= f(IS); di /dt =100A/µs Qrr=f(di /dt ); ID=20.7 A

rr

parameter: T

j

parameter: T

j

SPA20N60CFD

2

1.5

1

[µC]

rr

Q

0.5

0

2 4 6 8 10 12 14 16 18 20

125 °C

25 °C

IS [A]

3.5

3

2.5

[µC]

rr

Q

125 °C

2

1.5

25 °C

1

100 300 500 700 900

di/ dt [A/µs]

Rev. 1.2 page 9 2006-05-15

Definition of diode switching characteristics

SPA20N60CFD

Rev. 1.2 page 10 2006-05-15

PG-TO220-3-31: Outline

SPA20N60CFD

Dimensions in mm

Rev. 1.2 page 11 2006-05-15

SPA20N60CFD

Published by
Infineon Technologies AG
D-81726 München, Germany

© Infineon Technologies AG 2006
All Rights Reserved.

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Rev. 1.2 page 12 2006-05-15