Datasheet SPA-1318 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SPA-1318 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 2150 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.

VCC

VBIAS

RFIN

N/C

Active

Bias

RFOUT/

VCC

Input

Match

Preliminary

SPA-1318

2150 MHz 1 Watt Power Amplifier
with Active Bias

Product Features

• On-chip Active Bias Control

• Power Control Allows Power Consumption

Reduction

• Patented High Reliability GaAsHBT Technology

• High Linearity Performance: +48dBm OIP3 Typ.

• Surface-Mountable Plastic Package

Applications

• W-CDMA Systems

• Multi-Carrier Applications

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

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EDS-101429 Rev B

SPA-1318 2150 MHz 1 Watt Power Amp.

2150 MHz Application Circuit Data, Icc=320mA, T=+25C, Vcc=5V

Note: Tuned for Output IP3

Input/Output Return Loss,

0

-5

-10

-15

-20

dB

-25

-30

-35

-40

2.11 2 .12 2.13 2.14 2.15 2.16 2.17

Isolation vs Frequency

S22

S11

S12

GHz

14

13

12

11

dB

10

9

8

2.11 2.12 2.13 2.14 2.15 2.16 2.17

Gain vs. Frequency

GHz

Preliminary

Preliminary

25C

-40C
85C

32

P1dB vs Frequency

25C

31

30

dBm

29

28

27

2.11 2.12 2.13 2.14 2.15 2.16 2.17

GHz

-40C
85C

OIP3 vs Tone Power

60

50

40

30

dBm

20

10

0

5 9 13 17 21 25

2.14 GHz

P

per tone (dBm)

OUT

25C

-40C
85C

OIP3 vs. Frequency

(P

per tone = 14dBm)

25C

-40C
85C

OUT

V

GHz

cc

(V)

60

55

50

45

dBm

40

35

30

450

400

350

300

250

200

150

Device Current (mA)

100

50

0

25C

-40C
85C

2.11 2.12 2.13 2.14 2.15 2.16 2.17

Device Current vs. Source Voltage

012345

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

2

EDS-101429 Rev B

Preliminary

Preliminary

SPA-1318 2150 MHz 1 Watt Power Amp.

850-950 MHz Application Circuit Data (Optimized for IP3), Icc=400mA, T=+25C, Vcc=5V,

The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH

W-CDMA at 2.14 GHz

Adjacent Channel Power

vs. Channel Output Power

-30

-35

-40

-45

-50

-55

-60

Adjacent Channel Power (dBc)

-65
16 19 22 25

Channel Output Power (dBm)

W-CDMA at 2.14 GHz

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

3

EDS-101429 Rev A

SPA-1318 2150 MHz 1 Watt Power Amp.

Voltage Feed Resistor Bias Circuit (for 5V supply)

Vcc

Preliminary

Preliminary

22pF

5.6pF

1.2 nH

360 Ω

1.2nH

22pF

Vbias

5.6pF

360 Ω

8.2pF

1

2

3

4

10uF

8

7

6

5

2110 -2170 MHz Schematic

8.2pF

1000pF

8.2pF

Z=50 Ω, 17.6°

Vcc

10uF Tantalum

1000pF

8.2pF

15nH

1.8pF

15 nH

1.8pF

68pF

68pF

ECB-101161 Rev. B

SOIC-8 PA

Vpc

2110 -2170 MHz Evaluation Board Layout

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

4

Eval Board

EDS-101429 Rev B

Preliminary

Preliminary

SPA-1318 2150 MHz 1 Watt Power Amp.

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Absolute Maximum Ratings

Operation of this device above any one of these
parameters may cause permanent damage.

Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

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ACTIVE BIAS

NETWORK

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

5

EDS-101429 Rev A

.035 [.889]

.045 [1.143]

XXXX
SPA
1318

Preliminary

Preliminary

SPA-1318 2150 MHz 1 Watt Power Amp.

Part Number Ordering Information

rebmuNtraPleeRrePseciveDeziSleeR

8131-APS005"7

Package Outline Drawing

.194 [4.93]

1324

.155

[3.937]

8765

.061 [1.549]

.236

[5.994]

EXPOSED
PAD

.078

[1.969]

TOP VIEW

.194 [4.928]

SIDE VIEW

.016 [.406].050 [1.27]

.061 [1.549]

.003 [.076]

.058 [1.473]

.008 [.203]

SEATING PLANE

SEE DETAIL A

BOTTOM VIEW

.013 [.33] x 45°

.155 [3.937]

END VIEW

.

0

0

8

Recommended Land Pattern

PARTING LINE

.025

5°

DETAIL A

.24 [6.22]

Note: XXXX represents the lot code

Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling

information for Exposed Pad

TM

SOIC-8 products) to ensure no moisture is trapped in the encapsulated

.15 [3.81]

.05 [1.27]

.02 [.60]

.16 [4.02]

.11 [2.71]

.33 [8.42]

package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening
the sealed shipping materials.

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

6

EDS-101429 Rev B