Datasheet SPA-1218 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SPA-1218 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 1950 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.

VCC

VBIAS

RFIN

N/C

Active

Bias

RFOUT/

VCC

Input

Match

Preliminary

SPA-1218

1960 MHz 1 Watt Power Amp with
Active Bias

Product Features

• On-chip Active Bias Control

• Patented High Reliability GaAsHBT Technology

• High Linearity Performance: +48dBm OIP3 Typ.

• Surface-Mountable Plastic Package

Applications

• PCS Systems

• Multi-Carrier Applications

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

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EDS-101428 Rev A

SPA-1218 1950 MHz 1 Watt Power Amp.

1950 MHz Application Circuit Data, Icc=320 mA, T=+27C, VCC=5V

Note: Tuned for Output IP3

Preliminary

Preliminary

32

P1dB vs Frequency

30

28

26

dBm

24

22

25C

-40C

85C

20

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

Input/Output Return Loss,

Isolation vs Frequency

0

-5

S22

-10

-15

-20

dB

S11

-25

-30

-35

S12

-40

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

16

Gain vs. Frequency

14

12

dB

10

25C

-40C

85C

8

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

Output Third Order Intercept vs.

Frequency (P

55

per tone = 11dBm)

OUT

50

45

40

dBm

35

30

25

25C

-40C

85C

20

1.93 1.94 1.95 1.96 1.97 1.98 1.99

GHz

Output Third Order Intercept vs.

Tone Power, 1.96 GHz

55

50

45

40

dBm

35

30

25

25C

-40C

85C

20

8131823

P

per tone (dBm)

OUT

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

400
350
300
250
200
150
100

Device Current (mA)

50

0

-50
0123 45

2

Device Current vs. Source Voltage

25C

-40C

85C

VS (V)

EDS-101428 Rev A

Vcc

Preliminary

Preliminary

SPA-1218 1950 MHz 1 Watt Power Amp.

22pF

100nH,

LL1608-FS

390Ω

LL1608-FS

22pF

Vbias

100nH

390W

0.047uF

1

2

3

4

8

7

6

5

1930-1990 MHz Schematic

10uF,

Tantalum

Vcc

10uF Tantalum

270pF

270pF

Z=50Ω, 23.6°

0.047uF

22nH
LL1608-FS

22nH,

LL1608-FS

1.8 pF

68pF

68pF

1.8pF

ECB-101161 Rev. B

SOIC-8 PA

Eval Board

Vpc

1930-1990 MHz Evaluation Board Layout

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

3

EDS-101428 Rev A

SPA-1218 1950 MHz 1 Watt Power Amp.

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ACTIVE BIAS

NETWORK

Preliminary

Preliminary

5-8

Absolute Maximum Ratings

Operation of this device above any one of these
parameters may cause permanent damage.

Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

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EDS-101428 Rev A

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

Preliminary

Preliminary

SPA-1218 1950 MHz 1 Watt Power Amp.

Part Number Ordering Information

rebmuNtraPleeRrePseciveDeziSleeR

8121-APS005"7

.035 [.889]

.045 [1.143]

4

XXXX
SPA
1218

.194 [4.928]

32

678

TOP VIEW

SIDE VIEW

1

.155 [3.937]

5

.003 [.076]

Package Outline Drawing

.236 [5.994]

.061 [1.549]

.016 [.406].050 [1.27]

.061 [1.549]

.008 [.203]

SEATING PLANE

BOTTOM VIEW

.058 [1.473]

SEE DETAIL A

.194 [4.93]

.013 [.33] x 45°

.155 [3.937]

END VIEW

EXPOSED PAD

.078 [1.969]

.

0

0

8

Recommended Land Pattern

PARTING LINE

.025

5°

DETAIL A

.24 [6.22]

Note: XXXX represents the lot code

Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling

information for Exposed Pad

TM

SOIC-8 products) to ensure no moisture is trapped in the encapsulated

.15 [3.81]

.05 [1.27]

.02 [.60]

.16 [4.02]

.11 [2.71]

.33 [8.42]

package. In production, this baking procedure is not necessary if parts are used within 24 hours of opening
the sealed shipping materials.

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

5

EDS-101428 Rev A