Datasheet SPA-1118 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SPA-1118 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 850 MHz band.
Its high linearity makes it an ideal choice for wireless data
and digital applications.

VCC

VBIAS

Active Bias

N/C

N/C

Preliminary

SPA-1118

850 MHz 1 Watt Power Amplifier
with Active Bias

Product Features

• On-chip Active Bias Control

• Patented High Reliability GaAsHBT Technology

• High Linearity Performance: +48dBm OIP3 Typ.

• Surface-Mountable Plastic Package

RFIN

N/C

Input

Match

RFOUT/

VCC

N/C

Applications

• W-CDMA Systems

• Multi-Carrier Applications

• AMPS, ISM Applications

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

1

EDS-101427 Rev B

SPA-1118 850 MHz 1 Watt Power Amp.

850 MHz Application Circuit Data, Icc=320 mA, T=+25C, VCC=5V

Note: Tuned for Output IP3

Input/Output Return Loss,

Isolation vs Frequency

0

-5

-10

S22

-15

-20

dB

-25

S11

-30

-35

-40

0.85 0.87 0.89 0.91 0.93 0.95

GHz

S12

22

20

18

16

dB

14

12

10

0.85 0.87 0.89 0.91 0.93 0.95

Gain vs. Frequency

25C

-40C
85C

GHz

Preliminary

Preliminary

P1dB vs Frequency

32

30

28

26

dBm

24

22

20

0.85 0.87 0.89 0.91 0.93 0.95

GHz

Output Third Order Intercept vs

55

Tone Power, 900 MHz

50

45

40

dBm

35

30

25

20

8 111417202326

P

per tone (dBm)

OUT

25C

-40C
85C

25C

-40C
85C

Output Third Order Intercept vs.

Frequency (P

55

per tone = 14dBm)

OUT

50

45

40

dBm

35

30

25

20

25C

-40C
85C

0.85 0.87 0.89 0.91 0.93 0.95

GHz

Device Current vs. Source Voltage

400
350
300
250

25C

-40 C
85C

200
150
100

Device Current (mA)

50

0

-50
0246

VS (V)

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

2

EDS-101427 Rev B

Preliminary

Preliminary

SPA-1118 850 MHz 1 Watt Power Amp.

850-950 MHz Application Circuit Data, Icc=320mA, T=+25C, Vcc=5V, IS-95, 9 Channels Forward

880 MHz Adjacent Channel Power vs. Channel Output Power

-40

-45

-50

-55

-60

-65

-70

-75

Adjacent Channel Power (dBc)

-80

16 18 20 22 24

Channel Output Power (dBm)

-20

IS-95 CDMA at 880 MHz

-30

-40

-50

-60

-70

-80

-90

-100

-110

-120

Center 880 MHz 361.25 kHz/ Span 3.6125 MHz

CH PWR 23.0 dBm
ACP UP -46.7 dBm
ACP LOW -46.4 dBm

+23 dBm

+14 dBm

+17 dBm

+20 dBm

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

3

EDS-101427 Rev B

850 - 950 MHz Schematic

22pF

VCC

10uF,

Tantalum

Preliminary

Preliminary

SPA-1118 850 MHz 1 Watt Power Amp.

22nH

390Ω

22pF

22pF

1

2

3

4

8

7

6

5

850 - 950 MHz Evaluation Board Layout

Vbias

22pF

22nH

22pF

390Ω

1000pF

22pF

100 nH

22pF

Z=50Ω, 17°

5.6 pF

Vcc

10uF Tan talu m

1000pF

22pF

100nH

22pF

Note: Pin s 5, 7, 8 are n ot
connected internally

5.6pF

ECB-101161 Rev. B

SOIC-8 PA

Eval Board

Vpc

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

4

EDS-101427 Rev B

SPA-1118 850 MHz 1 Watt Power Amp.

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2

1

ACTIVE BIAS

NETWORK

Preliminary

Preliminary

6

Absolute Maximum Ratings

Operation of this device above any one of these
parameters may cause permanent damage.

Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

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EDS-101427 Rev B

Preliminary

Preliminary

SPA-1118 850 MHz 1 Watt Power Amp.

Part Number Ordering Information

rebmuNtraPleeRrePseciveDeziSleeR

8111-APS005"7

.035 [.889]

.045 [1.143]

XXXX
SPA
1118

TOP VIEW

.194 [4.928]

SIDE VIEW

1324

8765

Package Outline Drawing

.155

[3.937]

.061 [1.549]

.016 [.406].050 [1.27]

.061 [1.549]

.003 [.076]

.236

[5.994]

.008 [.203]

SEATING PLANE

BOTTOM VIEW

.058 [1.473]

SEE DETAIL A

.194 [4.93]

.013 [.33] x 45°

.155 [3.937]

END VIEW

EXPOSED
PAD

.078

[1.969]

0

.

0

8

Recommended Land Pattern

PARTING LINE

.025

5°

DETAIL A

.24 [6.22]

Note: XXXX represents the lot code

Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling

information for Exposed Pad

TM

SOIC-8 products) to ensure no moisture is trapped in the encapsulated

.15 [3.81]

.05 [1.27]

.02 [.60]

.16 [4.02]

.11 [2.71]

.33 [8.42]

package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening
the sealed shipping materials.

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

6

EDS-101427 Rev B