Datasheet spa06n60c3_rev1.3 Datasheet

SPA06N60C3

CoolMOSTM Power Transistor

Features

• New revolutionary high voltage technology

• Ultra low gate charge

Product Summary

V

@ T

DS

R

DS(on),max

1)

I

D

• Periodic avalanche rated

• High peak current capability

• Ultra low effective capacitances

• Extreme dv/dt rated

• Improved transconductance

• Fully isolated package (2500 V AC; 1 minute)

Type Package Ordering Code Marking

j,max

650 V

0.75

6.2 A

P-TO220-3-31

Ω

SPA06N60C3 PG-TO220-3-31 Q67040-S4631 06N60C3

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current Avalanche energy, single pulse

Avalanche energy, repetitive t Avalanche current, repetitive t

Drain source voltage slope dv/dt

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

1)

I

D

TC=25 °C T

1)

AR

1),2)

1)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C ID=3.1 A, VDD=50 V ID=6.2 A, VDD=50 V

I T

V

GS

V

GS

P

tot

static V AC (f>1 Hz)

TC=25 °C

=100 °C

C

=6.2 A, VDS=480 V,

D

=125 °C

j

Value

6.2

3.9

18.6 200 mJ

0.5

6.2

50

±20 ±30

32

A

V/ns

W

Operating and storage temperature

T

j

stg

-55 ... 150

°C

, T

Rev. 1.3 page 1 2010-12-21

SPA06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ambient

Soldering temperature

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

R

thJC

R

thJA

T

sold

leaded - - 80

1.6 mm (0.063 in.) from case for 10 s

- - 3.92 K/W

- - 260 °C

Static characteristics

Drain-source breakdown voltage Avalanche breakdown voltage

Gate threshold voltage

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

=0 V, ID=250 µA =0 V, ID=6.2 A

VDS=VGS, ID=0.26 mA

600 - - V

- 700 -

2.1 3 3.9

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

I

R

g

DSS

GSS

DS(on)

G

fs

VDS=600 V, VGS=0 V, T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=3.9 A, T

=25 °C

j

V

=10 V, ID=3.9 A,

GS

T

=150 °C

j

- 0.1 1 µA

- - 100

- - 100 nA

- 0.68 0.75

- 1.82 -

f=1 MHz, open drain - 1 |VDS|>2|ID|R

I

=3.9 A

D

DS(on)max

,

- 5.6 - S

Ω

Rev. 1.3 page 2 2010-12-21

SPA06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance Output capacitance Reverse transfer capacitance

Effective output capacitance, energy

3)

4)

related Turn-on delay time

Rise time Turn-off delay time Fall time

C C C

C

t t t t

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=25 V,

V

GS

f=1 MHz

=0 V, VDS=0 V

V

GS

to 480 V

V

=480 V,

DD

V

=10 V, ID=6.2 A,

GS

=12 Ω

R

G

- 620 - pF

- 200 -

-17-

-28-

-47-

-7-ns

-12-

-52-

-10-

Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage

1)

Pulse width limited by maximum temperature T

2)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

4)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

Q Q Q V

gs

gd

g

plateau

j,max

V

=480 V, ID=6.2 A,

DD

V

=0 to 10 V

GS

only

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 3.3 - nC

-12-

-2431

- 5.5 - V

DSS.

Rev. 1.3 page 3 2010-12-21

SPA06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Reverse Diode

Diode continuous forward current Diode pulse current

Diode forward voltage

Reverse recovery time Reverse recovery charge Peak reverse recovery current

I

S

I

S,pulse

V

SD

t

rr

Q I

rrm

=25 °C

T

C

- - 18.6

- - 6.2 A

VGS=0 V, IF=6.2 A, T

=25 °C

j

- 0.97 1.2 V

- 400 - ns

V

=480 V, IF=IS,

rr

R

di

/dt=100 A/µs

F

- 3.5 - µC

-25-A

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

R

th1

0.034 K/W C

th1

0.0000507 Ws/K

R

th2

R

th3

R

th4

R

th5

0.15 C

0.388 C

0.713 C

1.6 C

th2

th3

th4

th5

0.00045

0.00117

0.0114

0.939

Rev. 1.3 page 4 2010-12-21

1 Power dissipation 2 Safe operating area

P

=f(TC) ID=f(VDS); TC=25 °C; D=0

tot

parameter: t

40

30

10

2

1

p

limited by on-state resistance

SPA06N60C3

1 µs

10 µs

100 µs

[W]

20

tot

P

10

0

0 40 80 120 160

TC [°C]

[A]

D

I

10

0

-1

-2

10

0

10

1

VDS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

I

=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C

D

parameter: D=t

1

10

0

10

[K/W]

thJC

Z

-1

10

/T parameter: V

p

0.5

0.2

0.1

0.05

0.02

0.01 single pulse

[A]

D

I

GS

20

16

12

8

4

1 ms

DC

10

6 V

5.5 V

5 V

10 ms

7 V

10

3

2

20 V

6.5 V

4.5 V

10

-2

1

0

-1

-2

-3

-4

-5

10

-6

10

tp [s]

0

0 5 10 15 20

VDS [V]

4 V

Rev. 1.3 page 5 2010-12-21

SPA06N60C3

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

=f(VDS); Tj=150 °C R

D

parameter: V

GS

=f(ID); Tj=150 °C

DS(on)

parameter: V

GS

8

20 V

7 V

6.5 V

6

4

[A]

D

I

2

0

0 5 10 15 20

VDS [V]

6 V

5.5 V

5 V

4.5 V

4 V

4

V 4

V 4.5

3

]

Ω

[

2

DS(on)

R

1

0

0246810

ID [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=3.9 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

parameter: T

j

DS(on)max

V 5

V 5.5

V 6

V 20

2

1.6

1.2

]

Ω

[

R

DS(on)

0.8

98 %

typ

0.4

0

-60 -20 20 60 100 140 180

Tj [°C]

25

C °25

20

15

[A]

D

I

10

C °150

5

0

0246810

VGS [V]

Rev. 1.3 page 6 2010-12-21

SPA06N60C3

9 Typ. gate charge 10 Forward characteristics of reverse diode

V

=f(Q

GS

parameter: V

[V]

GS

V

); ID=6.2 A pulsed IF=f(VSD)

gate

DD

parameter: T

12

10

V 120

V 480

8

6

4

2

0

0102030

Q

[nC]

gate

j

2

10

[A]

F

I

10

25 °C

1

150 °C

0

-1

25 °C, 98%

0 0.5 1 1.5 2 2.5

VSD [V]

150 °C, 98%

11 Avalanche SOA 12 Avalanche energy

I

=f(tAR) EAS=f(Tj); ID=3.1 A; VDD=50 V

AR

parameter: T

[A]

AV

I

j(start)

8

250

200

6

150

4

125 °C

25 °C

[mJ]

AS

E

100

2

50

0

3

2

1

0

-1

-2

10

-3

10

0

20 60 100 140 180

tAR [µs]

Tj [°C]

Rev. 1.3 page 7 2010-12-21

13 Drain-source breakdown voltage 14 Typ. capacitances

SPA06N60C3

V

BR(DSS)

=f(Tj); ID=0.25 mA C =f(VDS); VGS=0 V; f=1 MHz

700

660

[V]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

Tj [°C]

4

10

3

10

2

10

C [pF]

1

10

0

10

0 100 200 300 400 500

Ciss

Coss

Crss

VDS [V]

15 Typ. C

E

=f(VDS)

oss

5

4

3

[µJ]

oss

E

2

1

0

stored energy

oss

0 100 200 300 400 500 600

VDS [V]

Rev. 1.3 page 8 2010-12-21

Definition of diode switching characteristics

SPA06N60C3

Rev. 1.3 page 9 2010-12-21

PG-TO-220-3-31 (FullPAK)

SPA06N60C3

Rev. 1.3 page 10 2010-12-21

SPA06N60C3

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office.

Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.3 page 11 2010-12-21