Datasheet SP6661 Datasheet (Sipex)

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SP6661

High Frequency 200mA Charge Pump

Inverter or Doubler

■ Inverts or Doubles Input Supply Voltage

1

■ 92% Power Efficiency at 100mA

■ 120kHz/900kHz Selectable Oscillator Fre-

quency

■ 4.5Ω Output Resistance Using 3.3µF Ceramic
Caps

■ Low Voltage Battery Operation

FC

CAP+

GND

CAP-

2

3

SP6661

8 Pin nSOIC

4

■ Ideal for 3.6V Lithium Ion Battery or 5.0V Input

■ High Output Current – 200mA

Now Available in Lead Free Packaging

■ Low Profile Solution

■ 1.5V Inverter Startup Guaranteed

■ Pin-Compatible High-Current Upgrade of the

ICL7660 and 660 Industry Standard

■ Smallest Package Available for the 660
Industry Standard – 8 pin µSOIC

DESCRIPTION

The SP6661 is a CMOS DC-DC Monolithic Voltage Converter that can be implemented as a
Voltage Inverter or a Positive Voltage Doubler. As a Voltage Inverter, a -1.5V to -5.0V output can
be converted from a +1.5V to +5.0V input. As a Voltage Doubler, a +5.0V to +10.0V output can
be provided from a +2.5V to +5.0V input. The SP6661 is ideal for both battery-powered and board
level voltage conversion applications with a typical operating current of 3mA and a high efficiency
(>90%) over most of its load-current range. Typical end products for this device are disk drive
supplies, operational amplifier and interface power supplies, medical instruments, and hand held
and laptop computers. The SP6661 is available in 8-pin NSOIC, and µSOIC packages.

8

7

6

5

V+

OSC

LV

OUT

+V

IN

+2.5V to +5.0V

C3
1µF to 22µF

CAP+

GND

CAP-

1

2

3

4

FC

C1
1µF to 22µF

Figure 2: Voltage Doubler

SP6661

®

+V

8

7

OSC

LV

6

OUT

5

DOUBLE

NEGATIVE

VOLTAGE

OUTPUT

C2

1µF to 22µF

C1

1µF to 22µF

®

+V

8

OSC

7

LV

6

OUT

5

CAP+

GND

CAP-

1

2

3

4

SP6661

FC

+V

IN

+1.5V to +5.0V

C3

1µF to 22µF

INVERTED
NEGATIVE
VOLTAGE

OUTPUT

C2

1µF to 22µF

Figure 1: Voltage Inverter

Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation

1

ABSOLUTE MAXIMUM RATINGS

These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability.

Power Supply Voltage

(V+ to GND or GND to OUT).............................+5.6V

LV Input Voltages............(OUT - 0.3V) to (V+ + 0.3V)

FC and OSC Input Voltages......The least negative of

(OUT - 0.3V) or (V+ - 5.6V) to (V+ + 0.3V)

SPECIFICATIONS

RETEMARAP.NIM.PYT.XAMSTINUSNOITIDNOC

2etoN

egnaRegatloVylppuS5.13.5VR

egatloVpU-tratS39.0V

tnerruCylppuS36AmdaoLoN

tnerruCtuptuOxaM002Am

tnerruCtupnIrotallicsO1±Aµ

ycneuqerFrotallicsO07021071zHk

ecnatsiseRtuptuO57

ycneiciffEnoisrevnoCegatloV0.999.99%daoLoN

ycneiciffErewoP08

07

98
28

OUT and V+ Continuous Output Current.........200mA

Output Short-Circuit Duration to GND (Note 1).......1s

Operating Temperature Ranges

SP6661E_...........................-40˚C to +85˚C

Continuous Power Dissipation (T

NSOIC

(derate 5.88mW/˚C above +70˚C).......471mW

= 70˚C)

AMB

µSOIC (derate 4.10mW/˚C above +70˚C)........330mW

Operating Temperature.......................-40˚C to +85˚C

Storage Temperature........................-65˚C to +150˚C

Lead Temperature (soldering 10s)..................+300˚C

sroticapaCFµ22htiwycneuqerFwoLtatiucriCretrevnI

T,DNG=VL,nepo=CF,Fµ22=3C=2C=1C,V0.5+=+V

T=

BMA

Tot

NIM

Ω

I

L

I

L

%

I

L

XAM

L

otrefer; 1erugiF .tiucrictset

005= Ω

3etoN,Am001=

Am001=
Am002=

sroticapaCFµ22htiwycneuqerFwoLtatiucriCrelbuoD

T,DNG=VL,nepo=CF,Fµ22=3C=2C=1C,V0.5+=+V

T=

2etoN

BMA

Tot

NIM

egnaRegatloVylppuS5.23.5VR

XAM

L

otrefer; 22erugiF .tiucrictset

k1= Ω

egatloVpU-tratS5.1V

tnerruCylppuS36AmdaoLoN

tnerruCtuptuOxaM002Am

tnerruCtupnIrotallicsO1±Aµ

ycneuqerFrotallicsO07021071zHk

ecnatsiseRtuptuO5.47

Ω

I

L

3etoN,Am001=

ycneiciffEnoisrevnoCegatloV0.999.99%daoLoN

ycneiciffErewoP98

97

Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation

49
09

I

L

%

I

L

Am001=
Am002=

2

SPECIFICATIONS (continued)

RETEMARAP.NIM.PYT.XAMSTINUSNOITIDNOC

sroticapaCFµ3.3htiwycneuqerFhgiHtatiucriCretrevnI

T,DNG=VL,+V=CF,Fµ3.3=3C=2C=1C,V0.5+=+V

T=

2etoN

BMA

Tot

NIM

egnaRegatloVylppuS5.13.5VR

egatloVpU-tratS39.0V

tnerruCylppuS0181AmdaoLoN

tnerruCtuptuOxaM002Am

tnerruCtupnIrotallicsO8±Aµ

ycneuqerFrotallicsO0050090521zHk

ecnatsiseRtuptuO57

Ω

ycneiciffEnoisrevnoCegatloV0.996.99%daoLoN

ycneiciffErewoP87

56

48
97

%

sroticapaCFµ3.3htiwycneuqerFhgiHtatiucriCrelbuoD

T,DNG=VL,+V=CF,Fµ3.3=3C=2C=1C,V0.5+=+V

T=

2etoN

BMA

Tot

NIM

egnaRegatloVylppuS5.23.5VR

egatloVpU-tratS5.1V

tnerruCylppuS0181AmdaoLoN

tnerruCtuptuOxaM002Am

tnerruCtupnIrotallicsO8±Aµ

ycneuqerFrotallicsO0050090521zHk

ecnatsiseRtuptuO5.47

Ω

ycneiciffEnoisrevnoCegatloV0.999.99%daoLoN

ycneiciffErewoP78

97

29
98

%

NOTE 1: Specified output resistance is a combination of internal switch resistance and capacitor ESR.
NOTE 2: In the test circuit capacitors C1, C2 and C3 are 22µF, 0.05 maximum ESR, ceramic or 3.3µF, 0.05Ω
maximum ESR, ceramic. Capacitors with higher ESR may reduce output voltage and efficiency. Refer to Capacitor
Selection section.
NOTE 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR. Refer to
Optimizing Capacitor Selection.

XAM

I

L

I

L

I

L

XAM

I

L

I

L

I

L

L

L

otrefer; 1erugiF .tiucrictset

005= Ω

3etoN,Am001=

Am001=
Am002=

otrefer; 2erugiF .tiucrictset

k1= Ω

3etoN,Am001=

Am001=
Am002=

Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation

3

Optimizing Capacitor Selection

Refer to Figure 1 for the total output resistance for various capacitance values and oscillator frequencies.
The reservoir and charge pump capacitor values are equal. The capacitance values required to maintain
comparable ripple and output resistance typically diminish proportionately as the pump frequency of
the SP6661 increases.

20
18
16
14
12

10

10KHz
20KHz
50KHz
100KHz

8
6

200KHz
500KHz
1000KHz

4
2
0

110100 1000

Total Output Source Resistance Vs C1, C2

C1, C2 Capacitance (uF)

Figure 1. Total Output Resistance for various capacitance values and oscillator frequencies.

Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation

4

PINOUT

FC

®

1

8

V+

CAP+

GND

CAP-

PIN ASSIGNMENTS

Pin Number Pin Symbol Description

1FCFrequency Control for the internal oscillator. FC = open,

2 CAP+ Connect to the positive terminal of the charge pump capacitor.

3 GND (Voltage Inverter Circuit) Ground.

3 GND (Positive Voltage Doubler Circuit) Positive supply voltage

4 CAP- Connect to the negative terminal of the charge pump capacitor.

5 OUT (Voltage Inverter Circuit) Negative voltage output pin.

2

SP6661

3

4

f

= 120kHz typical; FC = V+ f

osc

input.

7
6

5

OSC
LV
OUT

= 900kHz typical.

osc

5 OUT (Positive Voltage Doubler Circuit) Ground pin for power

supply.

6LVLow -voltage operation input pin in 660 circuits. In SP6661

circuits can be connected to GND, OUT or left open as desired
with no effect.

7 OSC Control pin for the oscillator. Internally connected to 15pF

capacitor. An external capacitor can be added to slow the
oscillator. Be careful to minimize stray capacitance. An
external oscillator can be connected to overdrive the OSC pin.

8V+(Voltage Inverter Circuit) Positive voltage input pin for the

power supply.

8V+ (Positive Voltage Doubler Circuit) Positive voltage output.

Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation

5

All package dimensions in inches

0.189/0.197

0.228/0.2440.150/0.157

0.014/0.019

1

0.050 BSC

0.053/0.069

0.0965
±0.003

2

0.020

0.020

2

1

0.013
±0.005

2

0.116

±0.004

0.118

±0.004

0.0256
BSC

0.118

±0.004

0.004

±0.002

0.034

±0.004

0.040

±0.003

100 die per waffle pack

95 NSOIC devices per tube, no minimum quantity 50 µSOIC devices per tube

0.012

±0.003

0.16

±0.003

R .003

12.0˚
±4˚

12.0˚
±4˚

0.008
0˚ - 6˚

0.006

±0.006

0.006

±0.006

0.0215

0.01

±0.006

0.037
Ref

0.116

±0.004

0.118

±0.004

3.0˚
±3˚

P

W

8-pin NSOIC 13” reels: P = 8mm, W = 12mm

pkg min qty per reel std qty per reel max qty per reel

CN 500 1500 2500
CU 500 1500 3000

Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation

6

ORDERING INFORMATION

Part Number Temperature Range Package Type

SP6661EN . ............................................ -40˚C to +85˚C ......................................... 8-Pin NSOIC

SP6661EN/TR ........................................ -40˚C to +85˚C ......................................... 8-Pin NSOIC

SP6661EU . ............................................ -40˚C to +85˚C ......................................... 8-Pin µSOIC

SP6661EU/TR ........................................ -40˚C to +85˚C ......................................... 8-Pin µSOIC

SP6661UEB ...................................................................................8-Pin µSOIC Evaluation Board

Available in lead free packaging. To order add "-L" suffix to part number.
Example: SP6661EN/TR = standard; SP6661EN-L/TR = lead free

/TR = Tape and Reel
Pack quantity is 2500 for NSOIC.

ANALOG EXCELLENCE

Sipex Corporation

Headquarters:

233 Hillview Dr
Milpitas, CA 95035
TEL: [phone]
FAX: [phone]

Sipex Corporation reserves the right to make changes to any products described herein. Sipex does not assume any liability arising out of the
application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.

Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler © Copyright 2004 Sipex Corporation

7