Datasheet SP6003 Datasheet (Littelfuse)

Page 1
TVS Diode Arrays (SPA
5
8
1
4
1
6
7
12
GND
GND
SP6003-04UTG-1
SP6003-06UTG-1
µDFN-08
µDFN-12
Cd Cd
18
Cd Cd
27
Cd Cd
36
Cd Cd
45
Cd Cd
1
12
Cd Cd
2
11
Cd Cd
3
10
Cd Cd
4
9
Cd Cd
5
8
Cd Cd
67
SP6003-04UTG-1
SP6003-06UTG-1
Dx: SP6003-04 Silicon Protection Array
®
Diodes)
ESD and EMI Filter Devices - SP6003 Series
SP6003 Series 7pF EMI Filter Array with ESD Protection
Description
Littelfuse’s SP6003 integrates 4 and 6 EMI filters (C-R-C) into a small, low-profile µDFN package with each filter providing greater than -20dB attenuation at 1GHz. Additionally, each I/O is capable of shunting ±12kV ESD strikes (IEC61000-4-2, contact discharge) away from sensitive electronic components. The performance of this small, slim design makes it extremely suitable for mobile handsets, PDA’s, and notebook computers.
Pinout
Features
• EMI ltering of
frequencies from 800MHz to 3GHz
• Greater than -20dB
attenuation (TYP) at 1GHz
RoHS
Pb
GREEN
• ESD, IEC61000-4-2,
±12kV contact, ±15kV air
• Small, low-prole μDFN
(JEDEC MO-229) package (TYP 0.5mm height)
SP6003
Functional Block Diagram
©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com for current information.
Applications
• Keypad Interface for
Portable Electronics
• LCD and Camera Display
Interfaces for Handsets
• Connector Interfaces for
Handsets
Application Example
1
Revision: November 29, 2012
Input
Outside World
4
5
GND
1
8
SP6003-04UTG-1 (µDFN)
• PDA’s
• Digital Cameras
• Notebook Computers
LCD Module
Controller
D1 D2 D3 D4
Signal Ground
Page 2
TVS Diode Arrays (SPA
®
Diodes)
ESD and EMI Filter Devices - SP6003 Series
Absolute Maximum Ratings
Symbol Parameter Value Units
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (T
Reverse Standoff Voltage V
Breakdown Voltage V
Reverse Leakage Current I
Resistance R
Diode Capacitance
Line Capacitance
ESD Withstand Voltage
Cutoff Frequency
Notes: 1 Parameter is guaranteed by design and/or device characterization.
2 Total line capacitance is two times the diode capacitance (CD).
3 50Ω source and 50Ω load termination
Operating Temperature -40 to 125 °C
Storage Temperature -55 to 150 °C
=25ºC)
OP
Parameter Symbol Test Conditions Min Typ Max Units
RWM
BR
LEAK
A
1,2
1,2
1
3
C
D
C
L
V
ESD
F
-3dB
IEC61000-4-2 (Contact Discharge) ±12 kV
IEC61000-4-2 (Air Discharge) ±15 kV
Above this frequency, appreciable
IR=1mA 7. 0 V
V
=5V 0.1 1. 0 µA
RWM
IR=10mA 80 100 120 Ω
VR=2.5V,f=1MHz 7 pF
VR=2.5V,f=1MHz 11 14 17 pF
attenutation occurs
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 10s) 260 °C
5.0 V
250 MHz
Analog Crosstalk (S41)Insertion Loss (S21)
0
-5
-10
-15
-20
Attenuation (dB)
-25
-30
-35
-40
-45
-50
10 1001000
Frequency (MHz)
Attenuation (dB)
-105
-120
-135
0
-15
-30
-45
-60
-75
-90
10 1001000
Frequency (MHz)
2
Revision: November 29, 2012
Please refer to http://www.littelfuse.com for current information.
Specifications are subject to change without notice.
©2012 Littelfuse, Inc.
Page 3
TVS Diode Arrays (SPA
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
0.00.5 1.01.5 2.02.5 3.03.5 4.04.5 5.0
DC Bias (V)
Capacitance (pF)
t
R
R
o
C
e
T
T
SP
6003
** U T
G -1
Series
Package
µ
DFN-08 (1.7x1.35mm)
µ
DFN-12 (2.5x1.35mm)
T= Tape & Reel
G= Green
Number of Channels
04 = 4 Channel µDFN-08 06 = 6 Channel
µ
DFN-12
–
®
Diodes)
ESD and EMI Filter Devices - SP6003 Series
Line Capacitance vs. DC Bias
Product Characteristics
Lead Plating Pre-Plated Frame
Lead Material Copper Alloy
Lead Coplanarity 0.0004 inches (0.102mm)
Substitute Material Silicon
Body Material Molded Epoxy
Flammability UL 94 V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
Soldering Parameters
Reflow Condition Pb – Free assembly
- Temperature Min (T
Pre Heat
- Temperature Max (T
- Time (min to max) (t
Average ramp up rate (Liquidus) Temp (T
) to peak
L
to TL - Ramp-up Rate 3°C/second max
T
S(max)
Reflow
- Temperature (T
- Temperature (t
Peak Temperature (T
L
) 60 – 150 seconds
L
) 260
P
Time within 5°C of actual peak Temperature (t
)
p
Ramp-down Rate 6°C/second max
Time 25°C to peak Temperature (TP) 8 minutes Max.
Do not exceed 260°C
T
P
T
L
T
S(max)
t
PreheatPrehea
S
Temperature
T
S(min)
25
time to peak temperature
) 150°C
s(min)
) 200°C
s(max)
) 60 – 180 secs
s
3°C/second max
) (Liquidus) 217°C
+0/-5
20 – 40 seconds
t
P
Ramp-up
amp-up
t
L
°C
Critical Zone
ritical Zon
L to TP
to
T
Ramp-down
amp-d
Time
SP6003
Part Numbering System
TVS Diode Arrays
®
(SPA
Diodes )
©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com for current information.
Ordering Information
SP6003-04UTG-1 µDFN-08 1.7x1.35mm
SP6003-06UTG-1 µDFN-12 2.5x1.35mm
3
Revision: November 29, 2012
Part
Number
Package Size Marking Min.
Order
Qty.
C114
C116YYWW
3000
3000
Page 4
Package Dimensions — μDFN-08
TVS Diode Arrays (SPA
®
Diodes)
ESD and EMI Filter Devices - SP6003 Series
E
0.10 C
0
.
08 C
D
8 7 6 5
Pin 1 Marking
1 2 3 4
Top View
A1 A
Side View
A3
Pin 1 Locator
8X
0.10
e
r
K
M
CAB
1 2 3 4
GND
C0.2
PA D
8 7 6 5
D2
Bottom View
μDFN-08
b
JEDEC MO-229
Millimeters Inches
E2
Min Max Min Max
A 0.45 0.55 0.018 0.022
A1 0.00 0.05 0.000 0.002
A3 0.152 REF 0.006 REF
b 0.15 0.25 0.006 0 .010
D 1.60 1.80 0.063 0.071
L
D2 1.10 1.30 0.043 0.051
E 1.25 1.45 0.049 0.057
E2 0.30 0.50 0.012 0.020
e 0.400 BSC 0.016 BSC
K 0.20 0.008
L 0.15 0.35 0.006 0.014
Package Dimensions — μDFN-12
D
12 11 10 9 8 7
E
Pin 1 Marking
1 2 3 4 5 6
Top View
0.10 C
0
.
05 C
A1
Side View
Pin 1 Locator
AA3
X
12
0.10 CAB
e
1 2 3 4
C0.2
12
11
1
Bottom View
M
GNDPAD
9
0
D2
5 6
8 7
b
E2
JEDEC MO-229
Millimeters Inches
Min Max Min Max
A 0.45 0.55 0.018 0.022
A1 0.00 0.05 0.000 0.002
A3 0.102 REF 0.004 REF
μDFN-12
L
b 0.15 0.25 0.006 0.010
D 2.40 2.60 0.095 0.103
D2 1.90 2.10 0.075 0.083
E 1.25 1.45 0.050 0.058
E2 0.30 0.50 0.012 0.020
e 0.400 BSC 0.016 BSC
L 0.15 0.35 0.006 0.014
4
Revision: November 29, 2012
Please refer to http://www.littelfuse.com for current information.
Specifications are subject to change without notice.
©2012 Littelfuse, Inc.
Page 5
TVS Diode Arrays (SPA
01
22.12
®
Devices)
ESD and EMI Filter Devices - SP6003 Series
Embossed Carrier Tape & Reel Specification — μDFN-08
ø1.55±
4.00±0.10
0.30
0.10
W
8.00±
1.47±0.05
A0 K0
4.00±0.10
0.65±0.05
ø1.00±
2.00±0.05
0.25
0.00
1.85±0.10
B0
Embossed Carrier Tape & Reel Specification — μDFN-12
0.01
0.00
.75±0.10
3.50±0.1
T=0.20±0.03
ø13.22
24.32
ø15.57
ø70.55
ø58.11
ø155.37
ø179.90
9.04
SP6003
1.46
1. 11
4.00±0.10
4.00±0.10
8.00±0.20
1.55±0.10
A0
©2012 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to www.littelfuse.com for current information.
12º MAX
2.00±0.05
ø1.00±
0.20±0.05
0.80±0.10
2.80±0.10
K0 B0
5
Revision: November 29, 2012
ø1.50± 0.10
1.75±0.10
3.50±0.05
0.05
12º MAX
22.12
ø13.22
24.32
ø15.57
ø70.55
ø58.11
ø155.37
ø179.90
9.04
1.46
1. 11
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