Datasheet SP4446 Datasheet (Sipex)

Page 1
®
PRELIMINARY
SP4446
High Output Voltage Boost Regulator
LCD Bias Regulator
FEATURES
■ High Output Voltage: Up to 30V
■ High Efficiency
■ Low Quiescent Current: ~20uA
■ Miniature Package: (5-lead SOT-23)
■ Programmable Output Voltage
Now Available in Lead Free Packaging
V
IN
54
SP4446
5 Pin SOT-23
123
SW
GND
SHDN
FB
■ 1Ω Switch (150mV at 150mA)
APPLICATIONS
■ LCD Bias
■ Tuner Pin Voltage
■ White LED Driver
■ High Voltage Bias
■ Digital Cameras
■ Cell Phone
■ Battery Backup
■ Handheld Computers
DESCRIPTION
The SP4446 is a micro power Boost Regualtor in a 5-lead SOT-23 package. It is a current limited, fixed off time regulator configured for use in boost mode applications. The operating voltage can be less than 3V and is capable of generating voltages as high as 30 Volts.
The SP4446 is to be supplied in a SOT-23-5 and permits the construction of complete regulators that occupy < 0.2 square inches of board space.
TYPICAL APPLICATION SCHEMATIC
V
IN
2 to 7V
V
SHDN
C1
4.7µF
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2004 Sipex Corporation
L1
10µH
IN
SP4446
GND
SW
FB
D1
R1
R2
High Voltage Output
C2
2.2 µF
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ABSOLUTE MAXIMUM RATINGS
VIN....................................................................... 15V
SW Voltage .............................................. -0.4 to 34V
Lead Temperature (Soldering, 10 sec) ............ 300°C
ESD Rating................................................. 2kV HBM
FB Voltage.......................................................... 2.5V
All other pins.................................. -0.3 to VCC + 0.3V
Current into FB ................................................. ±1mA
TJ Max ............................................................. 125°C
Operating Temperature Range ............ -40°C to 85°C
Peak Output Current < 10us SW .................... 500mA
Storage Temperature ...................... -65°C to +150°C
These are stress ratings only and functional operation of
the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may affect
reliability.
Power Dissipation. ......................................... 200mW
ELECTRICAL CHARACTERISTICS
Specifications are at VIN = 3.3V, V temperature range, unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS CONDITIONS
Input voltage V
Supply Current I
Reference Voltage V FB Hysteresis HYST 8 mV VFB Input Bias Current I Line Regulation ∆Vo/∆V Switch Off Time T
Switch Saturation Voltage V
Switch Current Limit I SHDN Bias Current I SHDN High Threshold (on) V SHDN Low Threshold (off) V Switch Leakage Current I
= VIN, TA = 25°C, ♦ denotes the specifications which apply over the full operating
SHDN
1.0 8.0 V Switch Current Limit =
IN
Q
20 30 µA ♦ No Switching
150mA
0.01 1 µA SHDN = 0V
1.17 1.22 1.27 V ♦
FB
FB
OFF
CESAT
15 80 nA ♦ V
I
0.04 %/V 1.2 ≤ V 300 nS V
1200 nS V
50 mV ♦ ISW = 50mA
= 1.22V
FB
> 1V
FB
< 0.3V
FB
IN
150 mV ISW = 150mA
100 150 200 mA ♦
LIM
SHDN
IH
IL
SWLK
512µA ♦ V
0.9 V
0.25 V
25µA ♦ Switch Off, VSW = 5V
SHDN
= 5V
≤ 8V
PIN DESCRIPTION
PIN NUMBER PIN NAME DESCRIPTION
1SWSwitch input to the internal power switch. 2 GND Ground 3FBFeedback 4 SHDN Shutdown. Pull high (on) to enable. Pull low (off) for shutdown. 5VINInput Voltage. Bypass this pin with a capacitor as close to the device
as possible.
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2003 Sipex Corporation
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VI
(EXTERNAL)
(EXTERNAL)
FUNCTIONAL DIAGRAM
OUT
L1
V
C1
R5
R1
Q1
3
FB
R2
IN
R6
Q2
R3
R4
X1
+
-
DISABLE SET
300ns
ONE-SHOT
CLEAR
X2
DRIVER
+
-
52.5mV
SW
TRANSISTOR
0.35
15
POWER
D1
C2
V
Shutdown
SHDN
4
Logic
General Overview:
Operation can be best understood by referring to the above block diagram. Q1 and Q2 along with R3 and R4 form a band gap reference. The input to this circuit completes a feedback path from the high voltage output through a voltage di­vider, and is used as the regulation control input. When the voltage at the FB pin is slightly above
1.22V, comparator X1 disables most of the internal circuitry. Current is then provided by capacitor C2, which slowly discharges until the voltage at the FB pin drops below the lower hysteresis point of X1, about 6mV. X1 then enables the internal circuitry, turns on chip power, and the current in the inductor begins to ramp up. When the current through the driver transistor reaches about 150mA, comparator X2 clears the latch, which turns off the driver tran­sistor for a preset 0.3µs. At the instant of shutoff, inductor current is diverted to the output through diode D1. During this 0.3µs time limit, inductor current decreases while its energy charges C2.
GND
2
THEORY OF OPERATION
At the end of the 0.3µs time period, driver transistor is again allowed to turn on which ramps the current back up to the 150mA level. Comparator X2 clears the latch, it’s output turns off the driver transistor, and this allows delivery of L1’s stored kinetic energy to C2. This switch­ing action continues until the output capacitor voltage is charged to the point where FB is at band gap (1.22V). When this condition is reached, X1 turns off the internal circuitry and the cycle repeats. The SP4446 contains circuitry to provide protection during start-up and while in short-circuit conditions. When FB pin volt­age is less than approximately 300mV, the switch off time is increased to about 1.2µs and the current limit is reduced to about 70% of its normal value. While in this mode, the average inductor current is reduced and helps minimize power dissipation in the SP4446, the external inductor and diode.
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2004 Sipex Corporation
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APPLICATION INFORMAMTION
Inductor Selection
For SP4446, the internal switch will be turned off only after the inductor current reaches the typical dc current limit (I
=150mA). However, there is
LIM
typically propagation delay of 200nS between the time when the current limit is reached and when the switch is actually turned off. During this 200nS delay, the peak inductor current will increase, exceeding the current limit by a small amount. The peak inductor current can be estimated by:
IPK = I
+
LIM
L
V
IN(MAX)
• 200nS
The larger the input voltage and the lower the inductor value, the greater the peak current.
In selecting an inductor, the saturation current specified for the inductor needs to be greater than the SP4446 peak current to avoid saturating the inductor, which would result in a loss in efficiency and could damage the inductor.
Choosing an inductor with low DCR decreases power losses and increase efficiency.
Refer to Table 1 for some suggested low ESR inductors.
Table 1. Suggested Low ESR inductor
MANUF. PART NUMBER DCR Current
MURATA LQH32CN100K21 0.44 300 770-436-1300 (10µH)
MURATA LQH32CN220K21 0.71 250 770-436-1300 (22µH)
TDK NLFC453232T-100K 847-803-6100 (10µH) 0.273 250
TDK NLC453232T-100K 0.9 370 847-803-6100 (22µH)
(Ω) Rating
(mA)
Capacitor Selection
Ceramic capacitors are recommended for their inherently low ESR, which will help produce low peak to peak output ripple, and reduce high fre­quency spikes.
For the typical application, 4.7µF input capacitor and 2.2µF output capacitor are sufficient. The input and output ripple could be further reduced by increasing the value of the input and output capaci­tors. Place all the capacitors as close to the SP4446 as possible for layout. For use as a voltage source, to reduce the output ripple, a small feedforward (47pF) across the top feedback resistor can be used to provide sufficient overdrive for the error com­parator, thus reduce the output ripple.
Refer to Table 2 for some suggested low ESR capacitors.
Table 2. Suggested Low ESR Capacitor
MANUF. PART CAP/ SIZE/
MURATA GRM32RR71E 2.2µF/25V 1210/X5R 770-436-1300 225KC01B
MURATA GRM31CR61A 4.7µF/10V 1206/X5R 770-436-1300 475KA01B
TDK C3225X7R1E 2.2µF/25V 1206/X7R 847-803-6100 225M
TDK C3216X5R1A 4.7µF/10V 1206/X5R 847-803-6100 475K
Output Voltage Program
NUMBER VOLTAGE TYPE
The SP4446 can be programmed as voltage source, the SP4446 requires 2 feedback resistors R1 & R to control the output voltage. As shown in Fig. 19.
VIN
L1
D1
VOUT
2
Diode Selection
A schottky diode with a low forward drop and fast switching speed is ideally used here to achieve high efficiency. In selecting a Schottky diode, the current rating of the schottky diode should be larger than the peak inductor current. Moreover,
C1
U1
1
5
S
V
4
W
I
N
SP4446
FBSHDN
D
N
G
2
C2
3
1.22V
R1
R2
the reverse breakdown voltage of the schottky diode should be larger than the output voltage.
Figure 19. Using SP4446 as Voltage Source
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2003 Sipex Corporation
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APPLICATION INFORMAMTION: Continued
The formula and table for the resistor selection are shown below:
V
1
=(
OUT
- 1 ) • R
2
R
1.22
Table 3. Divider Resistor Selection
V
(V) R1 (Ω)R
OUT
(Ω)
2
12 1M 113K 15 1M 88.7K 18 1M 73.2K 20 1M 64.9K 30 1M 42.2K
Layout Consideration
Both the input capacitor and the output capacitor should be placed as close as possible to the IC.
This can reduce the copper trace resistance which directly effects the input and output ripples. The feedback resistor network should be kept close to the FB pin to minimize copper trace connections that can inject noise into the system. The ground connection for the feedback resistor network should connect directly to the GND pin or to an analog ground plane that is tied directly to the GND pin. The inductor and the schottky diode should be placed as close as possible to the switch pin to minimize the noise coupling to the other circuits, especially the feedback network.
Load Disconnect in Shutdown
will be slightly sacrificed because of the satura­tion voltage and base current of the PNP transistor.
R3
154K
L1
5 V
IN
10uH
U1
SP4446
GND
2
1 SW
FBSHDN
V
IN
C1
4.7uF
34
1.22V
DS
Q1
MMBT2907A
64.9K
R1
1M
R2
C2 47pF
Fig. 20. Load Disconnect in Shutdown
PIN Diode Driver
The SP4446 can be used as PIN diode driver as shown in Fig. 21. Two Resistors (R1=1MΩ, R2=42.2KΩ) are used to program the output volt­age to be 30V. When input voltage is 3.3V or 5V, it can supply a maximum current of 3mA and 5mA to the load.
Murata LQH32CN100K21
3.3V or 5V
3.3V or 5V
Murata LQH32CN100K21
L1 10uH 0.3A
C1
C1
4.7uF
4.7uF
L1 10uH 0.3A
U1
U1
5 V
IN
SP4446
SP4446
SHDN
GND
2
2
V
IN
DS
DS
MBR0530
MBR0530
C2
C2
47pF
47pF
R1
R1 1M
1M
1
1
S
W
34
34
FBSHDN
1.22V
1.22V R2
R2
42.2K
42.2K
2.2uF
2.2uF
V
30V
30V
OUT
3 to 5 mA
3 to 5 mA
C3
C3
V
OUT
20V
C3
2.2uF
When SP4446 was shut down, the load is still connected to the input. In applications that re­quire output isolation during shutdown, an ex­ternal PNP transistor (for example MMBT2907A)
Fig. 21. Pin Diode Driver
can be added as shown in Figure 20. When the SP4446 is active, the voltage set at the emitter of the transistor exceeds the input voltage, forcing the transistor into the saturation region. When the SP4446 is shut down, the input voltage exceeds the emitter voltage, thus the transistor becomes inactive and provides high-impedance isolation between the input and load. Efficiency
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2004 Sipex Corporation
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Refer to the typical application circuit, T
= 25°C, unless otherwise specified.
PERFORMANCE CHARACTERISTICS
AMB
85
80
75
70
65
Efficiency (%)
60
55
50
Vin=3.3V;Vout =12V Efficiency
0369121518
Iout (mA)
Figure 1. 12V Output Efficiency (V
80
75
70
65
Efficiency (%)
60
Vin=3.3V;Vout =15V Efficiency
=3.3V)
IN
10 uH
22 uH
85
80
75
70
65
Efficiency (%)
60
55
50
051015 20 25 30
Vin=5.0V;Vout =12V Efficiency
Iout (mA)
Figure 2. 12V Output Efficiency (VIN=5V)
80
75
70
65
Efficiency (%)
60
Vin=5.0V;Vout =15V Efficiency
10 uH
22 uH
55
50
024681012
Iout (mA)
Figure 3. 15V Output Efficiency (VIN=3.3V)
80
75
70
65
60
Efficiency (%)
55
50
45
40
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Vin=3.3V; Vout = 18V Efficiency
10 uH
22 uH
Iout (mA)
Figure 5. 18V Output Efficiency (VIN=3.3V)
10 uH
22 uH
55
50
0369121518
Iout (mA)
Figure 4. 15V Output Efficiency (VIN=5V)
80
75
70
65
60
Efficiency (%)
55
50
45
40
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
Vin=5.0V; Vout = 18V Efficiency
10 uH
22 uH
Iout (mA)
Figure 6. 18V Output Efficiency (VIN=5V)
10 uH
22 uH
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2003 Sipex Corporation
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Refer to the typical application circuit, T
= 25°C, unless otherwise specified.
PERFORMANCE CHARACTERISTICS
AMB
75
70
65
60
55
50
Efficiency (%)
45
40
35
30
01234567
Vin=3.3V;Vout = 20V Efficiency
Iout (mA)
Figure 7. 20V Output Efficiency (VIN=3.3V)
12
10
8
6
4
Maximum Output Current (mA)
2
0
2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1
10uH
22uH
Input Voltage (V)
10 uH
22 uH
75
70
65
60
55
Efficiency (%)
50
45
40
35
024681012
Vin=5V;Vout = 20V Efficiency
Iout (mA)
Figure 8. 20V Output Efficiency (VIN=5V)
6
5
4
3
2
Maximum Output Current (mA)
1
0
10uH
22uH
2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1
Input Voltage (V)
10 uH
22 uH
Figure 9. Maximum Output Current vs. VIN (V
30
25
20
15
10
Quiescent Current (uA)
5
0
12345678
Input Voltage (V)
Figure 11. Quiescent Current IQ vs. V
Tamb=-40°C
Tamb=25°C
Tamb=85°C
IN
OUT
=20V)
Figure 10. Maximum Output Current vs. VIN (V
10
8
6
4
Shutdown Pin Current (uA)
2
0
12345678
Figure 12. Shutdown Pin Current vs. V
Input Voltage (V)
IN
OUT
=30V)
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2004 Sipex Corporation
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Refer to the typical application circuit, T
= 25°C, unless otherwise specified.
PERFORMANCE CHARACTERISTICS
AMB
250
200
150
100
Ipk Current Limit (mA)
50
0
12345678
Input Voltage (V)
Figure 13. IPK Current Limit vs. V
60
50
40
30
20
Switch Saturation Voltage (mV)
10
1.25
1.24
1.23
1.22
1.21
Feedback Voltage (V)
1.20
1.19
1.18
-40 -15 10 35 60 85
IN
Figure 14. Feedback Voltage vs. Temperature
V
IN
V
OUT
Temperature (C)
I
(100mA/DIV)
OUT
=2mA)
IN
=20V,
OUT
I
(5mA/DIV)
OUT
V
(AC)
OUT
V
SW
=20V,
OUT
0
-40 -15 10 35 60 85
Figure 15. Switch Saturation Voltage V
Temperature (C)
CESAT
vs.
Temperature (ISW=50mA)
V
SW
I
(0.1A/DIV)
L
V
(AC)
OUT
Figure 17. Typical Switching Waveforms (VIN=3.3V, V
OUT
=20V, I
OUT
=5mA)
Figure 16. Startup Waveform (VIN=3.3V, V I
Figure 18. Load Step Transient (VIN=3.3V, V 1O=100µA∼5mA)
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2003 Sipex Corporation
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PACKAGE: 5 PIN SOT-23
D
e1
N
E1/2
E1
1
e
N/2 +1
N/22
b
5 Pin SOT-23 JEDEC MO-178 (AA) Variation
SYMBOL
MIN NOM MAX
A--1.45 A1 0 - 0.15 A2 0.9 1.15 1.3
b0.3-0.5
c0.08-0.22 D E
E1
e
e1
2.90 BSC
2.80 BSC
1.60 BSC
0.95 BSC
1.90 BSC
L0.30.45 0.6
L1 L2
0.60 REF
0.25 BSC Ø0º4º8º ø5º10º 15º
Note: Dimensions in (mm)
E/2
E
B
B
SEE VIEW C
VIEW A-A
Ø
Gauge Plane
Seating Plane
Ø
L1
L
L
Ø
VIEW C
A
WITH PLATING
A2
Seating Plane
A1
SIDE VIEW
b
c
BASE METAL
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2004 Sipex Corporation
SECTION B-B
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ORDERING INFORMATION
Part Number Operating Temperature Range Package Type
SP4446EK .................................................. -40°C to +85°C ........................................................ 5 Pin SOT-23
SP4446EK/TR ............................................ -40°C to +85°C ........................................................5 Pin SOT-23
Available in lead free packaging. To order add "-L" suffix to part number. Example: SP4446EK/TR = standard; SP4446EK-L/TR = lead free
/TR = Tape and Reel Pack quantity is 2,500 for SOT-23.
CLICK HERE TO ORDER SAMPLES
Corporation
ANALOG EXCELLENCE
Sipex Corporation Headquarters and
Sales Office
233 South Hillview Drive Milpitas, CA 95035 TEL: (408) 934-7500 FAX: (408) 935-7600
Sipex Corporation reserves the right to make changes to any products described herein. Sipex does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
Date: 11/29/04 SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator © Copyright 2003 Sipex Corporation
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