The SP2504N integrates 4 channels of low capacitance
diodes with an additional zener diode to protect sensitive
I/O pins against lightning induced surge events and
ESD. This robust device can safely absorb up to 20A per
IEC61000-4-5 (t
=8/20μs) without performance degradation
P
and a minimum ±30kV ESD per IEC61000-4-2 international
standard. The low loading capacitance makes the SP2504N
ideal for protecting high-speed signal pins.
Features
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC61000-4-4, 40A
(t
p
=5/50ns)
• Low capacitance of 3.5pF
(TYP) per I/O
• Low leakage current of
1µA (MAX) at 2.5V
• Lightning, IEC61000-4-5,
20A (t
p
=8/20µs)
Functional Block Diagram
Additional Information
Datasheet
Resources
Samples
Applications
• 10/100/1000 Ethernet
Interfaces
• Customer Premise
Equipment (CPE)
Application Example
• VoIP Phones
• Set Top Boxes
• PBX Systems
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
Reverse Standoff VoltageV
Snap Back VoltageV
Reverse Leakage CurrentI
Clamp Voltage
Dynamic ResistanceR
ESD Withstand Voltage
Diode Capacitance
Diode Capacitance
Peak Current (tp=8/20μs)20.0A
Peak Pulse Power (tp=8/20µs)300W
Operating Temperature–40 to 125ºC
Storage Temperature–55 to 150°C
=25ºC)
OP
ParameterSymbolTest ConditionsMinTypMaxUnits
RWM
SB
LEAK
ISB=50mA2.0V
VR=2.5V, I/O to GND0.51. 0µA
IPP=1A, tp=8/20µs, Fwd5.0V
I
=5A, tp=8/20µs, Fwd6.3V
1
1
1
1
V
C
I/O-GND
C
V
C
DYN
ESD
I/O-I/O
PP
I
=10A, tp=8/20µs, Fwd8.0V
PP
I
=20A, tp=8/20µs, Fwd11. 5V
PP
(VC2-VC1)/(I
PP2-IPP1
IEC61000-4-2 (Contact)±30kV
IEC61000-4-2 (Air)±30kV
Reverse Bias=0V3.55.0pF
Reverse Bias=0V2.0pF
Thermal Information
ParameterRatingUnits
Storage Temperature Range–55 to 150°C
Maximum Junction Temperature150°C
Maximum Lead Temperature
(Soldering 20-40s)
2.5V
)0.35
260°C
W
Note: 1. Parameter is guaranteed by design and/or device characterization.
Pulse Waveform
Clamping Voltage vs. I
PP
Specifications are subject to change without notice.