Datasheet SP203 Datasheet (Polyfet)

polyfet rf devices

General Description

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

Total
Device
Dissipation

TM

t

ABSOLUTE MAXIMUM RATINGS ( T =

Junction to
Case Thermal
Resistance

o

40

Watts V

5.00

C/W

Maximum
Junction
Temperature

SP203

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORVDMOS

Watts

12.0
Package Style

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

o

25 C )

Storage
Temperature

o

-65 C to 150 C200 C A V

DC Drain
Current

oo

2.4

Drain to
Gate
Voltage

70 V

Single Ended

AP

Drain to
Source
Voltage

70

Gate to
Source
Voltage

20

Gps

η

Bvdss

Idss
Igss

Vgs

Idsat
Ciss
Crss
Coss

RF CHARACTERISTICS (

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR

10

45

12.0

WATTS OUTPUT )

dB

%

20:1 Relative

0.60

Idq = A, Vds = V, F =
Idq =

0.60

A, Vds = V, F =

Idq = 0.60

A, Vds = V, F =

28.0

28.0

28.0

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V

Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance

65

0.6

1

1 7

0.9

1.30

4.20

30.0

1.8

18.0

V

mA

uA

V

Mho

Ohm

Amp

pF
pF
pF

30.00Ids = mA, Vgs = 0V

Vds =
Vds = 0V Vgs = 30V

Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V

Vds =
Vds =
Vds =

28.0

0.06

V, Vgs = 0V

A, Vgs = VdsIds =

1.50

Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0

MHz

1,000
1,000

MHz

1,000

MHz

A

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 03/28/2001

Id in amps; Gm in mhos

Coss

Gain

1dB compression = 10 watts

SP203

POUT VS PIN GRAPH

SP203 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.6A

16

14

12

10

8

6

4

2

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Efficiency = 45%

PIN IN WATTS

S2A 3 DIE IV

4.5
4

3.5
3

2.5
2

ID IN AMPS

1.5
1

0.5
0

0 2 4 6 8 10 12 14 16 18 20

vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v

VDS IN VOLTS

Pout

13.00

12.00

11.00

10.00

9.00

8.00

7.00

6.00

5.00

CAPACITANCE VS VOLTAGE

100

10

1

0.1
0 5 10 15 20 25 30

S2A 3 DICE CAPACITANCE

Ciss

Crss

VDS IN VOLTS

ID & GM VS VGSIV CURVE

10.00

1.00

0.10

0 2 4 6 8 10 12 14

S2A 3 DIE ID & GM Vs VG

Id

gM

Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 03/28/2001