Datasheet SP0610T Datasheet (Siemens)

SP 0610T

SIPMOS

®

Small-Signal Transistor

• P channel

• Enhancement mode

• Logic Level

• V

= -1.0..-2.0V

GS(th)

Pin 1 Pin 2 Pin 3

G S D

Type

V

DS

I

D

R

DS(on)

Package Marking

SP 0610T -60 V -0.13 A 10 Ω SOT-23 sSF

Type Ordering Code Tape and Reel Information

SP 0610T Q67000-S088 E6327

Maximum Ratings
Parameter Symbol Values Unit

Drain source voltage
Drain-gate voltage

R

= 20 k

GS

Ω

Gate source voltage
Continuous drain current

T

= 36 °C

A

DC drain current, pulsed

T

= 25 °C

A

Power dissipation

T

= 25 °C

A

V

DS

V

DGR

V

GS

I

D

I

Dpuls

P

tot

-60 V

-60

±

20

-0.13

-0.52

0.36

A

W

Semiconductor Group 1 Sep-13-1996

SP 0610T

Maximum Ratings
Parameter Symbol Values Unit

Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate- reverse side

1)

T

j

T

stg

R

thJA

R

thJSR

-55 ... + 150 °C

-55 ... + 150

≤ 350 K/W
≤

285
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= -0.25 mA,

D

T

= 25 °C

j

V

(BR)DSS

V

-60 - -

Gate threshold voltage

=

V

GS

V

DS, ID

= -1 mA

Zero gate voltage drain current

V
V

DS
DS

= -60 V,
= -60 V,

V
V

GS
GS

= 0 V,
= 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= -20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= -10 V,

GS

I

= -0.5 A

D

V

GS(th)

I

DSS

I

GSS

R

DS(on)

-1 -1.5 -2

-

-

-0.1

-2

-1

-60

- -1 -10

- 7 10

µA

nA

Ω

Semiconductor Group 2 Sep-13-1996

SP 0610T

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= -0.5 A

Input capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Turn-on delay time

V
R

DD

GS

= -30 V,

= 50

Ω

V

GS

= -10 V,

I

D

= -0.27 A

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

0.08 0.13 ­pF

- 30 40

- 17 25

- 8 12
ns

- 7 10

Rise time

V
R

DD

GS

= -30 V,

= 50

Ω

V

GS

Turn-off delay time

V
R

DD

GS

= -30 V,

= 50 Ω

V

GS

Fall time

V
R

DD

GS

= -30 V,

= 50 Ω

V

GS

= -10 V,

= -10 V,

= -10 V,

I

= -0.27 A

D

I

= -0.27 A

D

I

= -0.27 A

D

t

r

t

d(off)

t

f

- 12 18

- 10 13

- 20 27

Semiconductor Group 3 Sep-13-1996

SP 0610T

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

A

Inverse diode direct current,pulsed

T

= 25 °C

A

Inverse diode forward voltage

V

= 0 V,

GS

I

= -0.18 A,

F

T

= 25 °C

j

I

I

V

S

SM

SD

A

- - -0.13

- - -0.52
V

- -0.85 -1.2

Semiconductor Group 4 Sep-13-1996

SP 0610T

Power dissipation

P

= ƒ(

T

tot

P

tot

)

A

0.40

W

0.32

0.28

0.24

0.20

0.16

0.12

0.08

0.04

0.00
0 20 40 60 80 100 120 °C 160

Drain current

I

= ƒ(

T

D

parameter:

I

D

T

A

)

A

≥

GS

-10 V

V

-0.14
A

-0.12

-0.11

-0.10

-0.09

-0.08

-0.07

-0.06

-0.05

-0.04

-0.03

-0.02

-0.01

0.00
0 20 40 60 80 100 120 °C 160

T

A

Safe operating area
parameter :

D

= 0.01,

I

D

T

=f(

V

=25°C

C

DS

)

Drain-source breakdown voltage

V

(BR)DSS

V

(BR)DSS

= ƒ(

T

)

j

-71

V

-68

-66

-64

-62

-60

-58

-56

-54

-60 -20 20 60 100 °C 160

T

j

Semiconductor Group 5 Sep-13-1996

SP 0610T

Typ. output characteristics

ƒ(

I

=

V

D

parameter:

I

D

)

DS

t

= 80 µs

p

-0.30

P

= 0W

tot

A

-0.26

-0.24

-0.22

-0.20

-0.18

-0.16

-0.14

-0.12

-0.10

-0.08

-0.06

-0.04

-0.02

0.00

0.0 -1.0 -2.0 -3.0 -4.0 V -6.0

k

l

j

i

h

g

e

c

a

V

f

d

b

V

[V]

GS
a -2.0

b -2.5
c -3.0
d -3.5
e -4.0
f -4.5
g -5.0
h -6.0
i -7.0
j -8.0
k -9.0
l -10.0

DS

Typ. drain-source on-resistance

R

DS (on)

parameter:

R

DS (on)

ƒ(

=

I

)

D

t

32

= 80 µs,

p

a

b

c

d

T

= 25 °C

j

e

f

Ω

24

20

16

12

8

V

[V] =

GS

4

a

b

c

d

e

f

g

-2.0

-2.5

-3.0

-3.5

-4.0

0

0.00 -0.04 -0.08 -0.12 -0.16 A -0.24

-4.5

-5.0

h

-6.0

-7.0

g

h

i

j

k

l

i

j

k

-8.0

l

-9.0

-10.0

I

D

Typ. transfer characteristics
parameter:

-0.65

-0.55

I

D

-0.50

-0.45

-0.40

-0.35

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

t

= 80 µs

p

A

0 -1 -2 -3 -4 -5 -6 -7 -8 V -10

ID = f(V

GS

)

V

GS

Typ. forward transconductance
parameter:

0.16

g

fs

0.12

0.10

0.08

0.06

0.04

0.02

0.00

t

= 80 µs,

p

S

0.00 -0.10 -0.20 -0.30 -0.40 A -0.55

g

= f (

fs

I

)

D

I

D

Semiconductor Group 6 Sep-13-1996

SP 0610T

Drain-source on-resistance

R

DS (on)

parameter:

R

DS (on)

= ƒ(

T

)

j

I

24

= -0.5 A,

D

V

GS

= -10 V

Ω

20
18
16
14
12
10

8
6
4
2

0

-60 -20 20 60 100 °C 160

98%

typ

Gate threshold voltage

V

parameter:

V

GS(th)

T

j

= ƒ(

T

GS (th)

-4.6
V

-4.0

-3.6

-3.2

-2.8

-2.4

-2.0

-1.6

-1.2

-0.8

-0.4

0.0

)

j

V

=

V

,

I

GS

-60 -20 20 60 100 °C 160

DS

= -1 mA

D

98%

typ

2%

T

j

Typ. capacitances

C = f (V

parameter:

C

)

DS

V

=0V, f = 1 MHz

GS

3

10

pF

2

10

1

10

0

10

0 -5 -10 -15 -20 -25 -30 V -40

Forward characteristics of reverse diode

I

= ƒ(

V

F

parameter:

I

F

C

iss

C

oss

C

rss

V

DS

)

SD

Tj, t

= 80 µs

p

0

-10

A

-1

-10

-2

-10

T

= 25 °C typ

j

T

= 150 °C typ

j

T

= 25 °C (98%)

j

T

= 150 °C (98%)

j

-3

-10

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

V

SD

Semiconductor Group

7 Sep-13-1996

Package outlines

SOT-23

SP 0610T

Dimensions in mm

Semiconductor Group 8 Sep-13-1996