This new broadband protection device from Littelfuse
provides overvoltage protection for applications such
as 10/100/1000 BaseT Ethernet, T3/E3 DS3 interfaces,
ADSL2+, and VDSL2+. This new protector combines the
TVS diode element with a diode rectifier bridge to provide
both longitudinal and differential protection in one package.
This design innovation results in a capacitive loading
characteristic that is log-linear with respect to the signal
voltage across the device. This reduces intermodulation
(IM) distortion caused by a typical solid-state protection
solution. The application schematic provides the
connection information.
This schematic shows a high-speed data interface
protection solution. The SP03-3.3 provides both metallic
(differential) and longitudinal (common mode) protection
from lightning induced surge events. Its surge rating is
compatible with the intra-building surge requirements
of Telcordia’s GR-1089-CORE, and the Basic Level
Recommendations of ITU K.20 and .21. This device
protects against both positive and negative induced surge
events. The TeleLink fuse provides overcurrent protection
for the long term 50/60 Hz power fault events.
Page 2
TVS Diode Arrays (SPA
®
Diodes)
Lightning Surge Protection - SP03-3.3 Series
Absolute Maximum Ratings
ParameterRatingUnits
Peak Pulse Current (8/20µs)150A
Peak Pulse Power (8/20µs)3300W
IEC 61000-4-2, Direct Discharge, (Level 4)30kV
IEC 61000-4-2, Air Discharge, (Level 4)30kV
IEC 61000-4-5 (8/20µs)100A
Telcordia GR 1089 (Intra-Building) (2/10µs)100A
ITU K.20 (5/310µs)40A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (TOP = 25°C)
ParameterSymbolTest ConditionsMinTypMaxUnits
Reverse Stand-Off VoltageV
Reverse Breakdown VoltageV
Reverse Breakdown VoltageV
Reverse Leakage CurrentI
Clamping Voltage, Line-GroundV
Clamping Voltage, Line-GroundV
Clamping Voltage, Line-LineV
Clamping Voltage, Line-LineV
Junction CapacitanceC
RWM
BR
BR
R
IT= 2µA3.3--V
IT= 50µA3.3--V
V
= 3.3V, T= 25°C--1µA
RWM
C
C
C
C
IPP= 50A, tp=8/20 µs--11. 5V
IPP= 100A, tp=8/20 µs--15V
IPP= 50A, tp=8/20 µs--13.5V
IPP= 100A, tp=8/20 µs--18V
Between I/O Pins and Ground
VR=0V, f= 1MHz
j
Between I/O Pins
=0V, f= 1MHz
V
R
Thermal Information
ParameterRatingUnits
SOIC Package170°C/W
Operating Temperature Range–40 to 125°C
Storage Temperature Range–55 to 150°C
Maximum Junction Temperature150°C
Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)
---3.3V
-1625pF
-812pF
260°C
Figure 1: Non-repetitive Peak Pulse Current vs. Pulse Time
1000
100
10
Peak Pulse Current (A)
1
1101001000
Pulse decay time (µs)
Figure 2: Current Derating Curve
120
)
P
100
80
60
40
20
Percentage of Rated Current (%I
0
020406080100120140160
Ambient Temperature (C)
Specifications are subject to change without notice.