Page 1
Product Description
g
g
Stanford Microdevices’ SNA-676 is a high-performance
GaAs Heterojunction Bipolar Transistor (MMIC) housed in a
low-cost surface mountable stripline package. A Darlington
configuration is utilized for broadband performance to 6.5
GHz.
These unconditionally stable amplifiers provide 11dB of gain
and +18dBm of P1dB when biased at 5.7V and 70mA. This
MMIC requires only a single suply voltage. The use of an
external resistor allows for bias flexibility and stability.
Also available in chip form (SNA-600), its small size (0.4mm
x 0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-676 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Output Power vs. Frequency
22
20
18
dBm
16
14
12
0.112345678
GHz
SNA-676
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
• Cascadable 50 Ohm Gain Block
• 11dB Gain, +18dBm P1dB
• High Linearity, +36dBm TOIP T yp .
• 1.5:1 Input and Output VSWR
• Operates From a Single DC Supply
• Low Cost Stripline Mount Ceramic Package
Applications
• Narrow and Broadband Linear Amplifiers
• Commercial and Industrial Applications
50 Ohm Gain Blocks
Electrical Specifications at Ta = 25C
Sym bol
G
BW 3dB 3dB Bandw idth GHz 6.5
P
NF Noise Fi
VSW R Input / O utput f = 0.1-6.5 G Hz 1.5:1
IP
T
ISO L R everse Isolation f = 0.1-6.5 G Hz dB 17.0
VD D evice Voltage V 4 .8 5 .7 6 .8
dG/dT
dV/dT Device Voltage Tem perature Coefficient m V/degC-5.0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Param eters: Test Conditions:
Id = 70m A, Z0 = 50 O hms
S m a ll S ignal Gain
P
Output Pow er at 1dB Com pression
1dB
ure
Third Order Intercept P oint f = 0.1-2.0 G Hz dBm 36.0
3
Group Delay f = 2.0 G Hz psec 120
D
De vice
Tem perature Coefficient
Gain
f = 0.1-4.0 G Hz
f = 4.0-6.5 G Hz
f = 0.1-2.0 G Hz
f = 2.0-6.5 G Hz
f = 0.1-4.0 G Hz
f = 4.0-6.5 G Hz
Units Min. Typ . M ax.
dB
dB
dBm
dB
dB/de
C -0.0023
5-89
9.0
8.0
11 .0
9.0
18.0
16.0
7.5
8.5
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SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds = 5.7V , Ids = 70mA)
°°
-5
-10
-15
dB
-20
-25
-30
0.112345678
|S12| vs. Frequency
|S11| vs. Frequency
0
-5
-10
dB
-15
-20
-25
0.112345678
50 Ohm Gain Blocks
Noise Figure vs. Frequency
10
9
8
dB
7
6
5
0.11234566.5
Typical S-Parameters Vds = 5.7V, Ids = 70mA
Freq G Hz |S 11 | S11 Ang |S 2 1 | S21 Ang |S 1 2 | S12 Ang |S 2 2 | S22 Ang
.1 0 0
.2 5 0
.5 0 0
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
0.152 -14 3.624 152 0.095 -4 0.198 -4
0.146 -25 3.602 145 0.139 -10 0.205 -26
0.131 -42 3.549 140 0.149 -30 0.247 -56
0.110 -83 3.583 102 0.148 -59 0.222 -112
0.085 -130 3.567 59 0.146 -90 0.198 -179
0.072 17 8 3.541 21 0.145 -120 0.193 120
0.077 10 9 3.512 -22 0.141 -152 0.203 54
0.107 52 3.42 7 -64 0.136 180 0.222 1
0.143 0 3.401 -106 0.132 147 0.248 -60
0.168 -44 3.290 -1 44 0.12 8 118 0.270 -117
0.173 -90 3.280 175 0.124 88 0.28 8 177
0.141 -142 3.104 12 8 0.124 60 0.285 117
0.079 16 9 2.929 87 0.123 29 0.276 51
0.038 62 2.65 8 47 0.121 0 0.259 -10
0.079 -57 2.359 1 0.119 -35 0.322 -76
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
GHz
GHz
GHz
12
10
8
dB
6
4
|S21| vs. Frequency
0.112345678
GHz
|S22| vs. Frequency
-5
-10
-15
dB
-20
-25
-30
0.112345678
GHz
TOIP vs. Frequency
38
36
34
dB
32
30
28
0.112345678
GHz
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-90
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SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
A
y
Absolute Maximum Ratings
Parameter
Device Current 110m A
Power Dissipation 700mW
RF In pu t Po we r 200 m W
Junction Temperature +200C
Operating Temperature -45C to +85C
Storage Temperature -65C to +150C
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Absolute
Maximum
MTTF vs. Temperature @ Id = 70mA
Lead Temperature
+55C +155C 1000000
+90C +190C 100000
+120C +220C 10000
Thermal Resistance (Lead-Junction): 250° C/W
Junction
Temperature
MTTF (hrs)
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
SNA-676-TR1 1000 7"
SNA-676-TR2 3000 13"
SNA-676-TR3 5000 13"
Recomm ended Bias Resistor Values
Suppl
Voltage(Vs)
Rbias (Ohms) * 24 46 89 131 203
** Not Recommended
5V 7.5V 9V 12V 15V 20V
Typical Biasing Configuration
Pin Designation
1RF in
2GND
RF out
3
and Bias
4GND
50 Ohm Gain Blocks
Typical Performance at 25
°°
°
C
°°
Power Gain vs. Device Current
12.0
11.5
11.0
10.5
10.0
dB
9.5
9.0
8.5
8.0
0.1 1.0 2. 0 3.0 4.0 5.0 6.0
20mA Steps
80mA
40m
6.5
Vdc
5.5
GHz
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-91
Device Voltage vs. Id
7
6
5
50 55 60 65 70 75 80
mA
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