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Product Description
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Stanford Microdevices’ SNA-600 is a high-performance
GaAs Heterojunction Bipolar Transistor (MMIC) in die form.
A Darlington configuration is utilized for broadband performance to 6.5 GHz.
These unconditionally stable amplifiers provide 11dB of gain
and +18dBm of P1dB when biased at 5.7V and 70mA. P1dB
and TOIP may be improved by 2dB by biasing @ 100mA.
This MMIC requires only a single supply voltage. The use of
an external resistor allows for bias flexibility and stability.
Also available in packaged form (SNA-676, -686 & -687), its
small size (0.4mm x 0.4mm) and gold metallization make it an
ideal choice for use in hybrid circuits.
The SNA-600 is available in gel paks at 100 devices per
container.
Output Power vs. Frequency
22
20
18
dBm
16
14
12
0.112345678
GHz
SNA-600
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
• Cascadable 50 Ohm Gain Block
• 11dB Gain, +18dBm P1dB
• High Linearity, +36dBm TOIP T y p.
• 1.5:1 Input and Output VSWR
• Chip Back Is Ground
Applications
• Narrow and Broadband Linear Amplifiers
• Commercial and Industrial Applications
50 Ohm Gain Blocks
Electrical Specifications at Ta = 25C
Sym bol
G
BW 3dB 3dB Bandw idth GHz 6.5
P
NF Noise Fi
VSW R Input / Output f = 0.1-6.5 GH z 1.5:1
IP
T
ISO L R everse Isolation f = 0.1-6.5 GH z dB 17.0
VD De vice Voltage V 4 .8 5.7 6.8
dG/dT
dV/dT Device Volta
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Param eters: Test Conditions:
Id = 70m A, Z
S m a ll S ignal Gain
P
Output Power at 1dB C ompression
1dB
Third Order Intercept Poin t
3
Group Delay f = 2.0 GH z psec 120
D
De vice
= 50 O hms
0
ure
Tem perature Coefficient
Gain
e Tem perature Coefficient m V/degC-5.0
f = 0.1-4.0 GH z
f = 4.0-6.5 GH z
f = 0.1-2.0 GH z
f = 2.0-6.5 GH z
f = 0.1-4.0 GH z
f = 4.0-6.5 GH z
f = 0.1-2.0 GH z
f = 2.0-6.5 GH z
5-85
Units Min. Typ . M ax.
dB
dB
dBm
dB
dBm
dBm
dB/de
C -0.0023
9.0 11.0
9.0
18.0
16.0
7.5
8.5
36.0
34.0
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SNA-600 DC-6.5 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds = 5.7V , Ids = 70mA)
°°
-5
-10
-15
dB
-20
-25
-30
0.112345678
|S12| vs. Frequency
|S11| vs. Frequency
0
-5
-10
dB
-15
-20
-25
0.112345678
50 Ohm Gain Blocks
Noise Figure vs. Frequency
10
9
8
dB
7
6
5
0.11234566.5
GHz
GHz
GHz
12
10
8
dB
6
4
|S21| vs. Frequency
0.112345678
GHz
|S22| vs. Frequency
-5
-10
-15
dB
-20
-25
-30
0.112345678
GHz
TOIP vs. Frequency
38
36
34
dB
32
30
28
0.112345678
GHz
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-86
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SNA-600 DC-6.5 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Parameter
Device Current 150mA
Power Dissipation 1000mW
RF Input Power 200mW
Junction Temperature +200C
Operating Temperature -45C to +85C
Storage Temperature -65C to +150C
Absolute
Maximum
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
MTTF vs. T emperature @ Id = 70mA
Die Bottom
Temperature
+75C +155C 1000000
+110C +190C 100000
+140C +220C 10000
Thermal Resistance (Lead-Junction): 200° C/W
Junction
Temperature
MTTF (hrs)
Die Attach
The die attach process mechanically attaches the die to
the circuit substrate. In addition, it electrically connects
the ground to the trace on which the die is mounted and
establishes the thermal path by which heat can leave the
die.
Assembly Techniques
Epoxy die attach is recommended. The top and bottom
metallization is gold. Conductive silver-filled epoxies are
recommended. This method involves the use of epoxy to
form a joint between the backside gold of the chip and
the metallized area of the substrate. A 150 C cure for 1
hour is necessary. Recommended epoxy is Ablebond
84-1LMIT1 from Ablestik.
Part Number Ordering Information
Part Number Devices Per Pak
SNA- 60 0 100
Typical Biasing Configuration
Wire Bonding
Electrical connections to the die are through wire
bonds. Stanford Microdevices recommends wedge
bonding or ball bonding to the pads of these devices.
Recommended Wedge Bonding Procedure
1. Set the heater block temperature to 260C +/- 10C.
2. Use pre-stressed (annealed) gold wire between
0.0005 to 0.001 inches in diameter.
3. Tip bonding pressure should be between 15 and
20 grams and should not exceed 20 grams. The
footprint that the wedge leaves on the gold wire
should be between 1.5 and 2.5 wire diameters
across for a good bond.
50 Ohm Gain Blocks
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-87
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