Datasheet SNA-586 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is

32.5 dBm.

These unconditionally stable amplifiers provide 18 dB of gain and

18.4 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET.

Small Signal Gain vs. Frequency @ ID=65mA

25

20

dB

15

10

Preliminary

SNA-586

DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier

NGA-586 Recommended for New Designs

Product Features

• High Output IP3: 32.5 dBm @ 850 MHz

• Cascadable 50 Ohm Gain Block

• Patented GaAs HBT Technology

• Operates From Single Supply

5

02468

Frequency GHz

Applications

• Cellular, PCS, CDPD, Wireless Data, SONET

Electrical Specifications

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

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EDS-101397 Rev A

SNA-586 DC-5GHz Cascadable MMIC Amplifier

Absolute Maximum Ratings

Preliminary

Operation of this device above any one of these parameters may cause permanent damage.

Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l

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*NOTE: While the SNA-586 can be operated at different bias currents, 65 mA is the recommended bias for lower junction temperature and longer life. This reflects typical operating conditions which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85°C ambient temperature.

2

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EDS-101397 Rev A

Preliminary

SNA-586 DC-5GHz Cascadable MMIC Amplifier

200

Junction Temp vs. Dissipated Power MTTF vs. Dissipated Power

180

160

Junction Temperature (°C)

85C lead temp

140

0.25 0.35 0.45

Pdiss (W)

40

35

dBm

30

25

0.51.52.53.5

Output IP3 vs. ID vs. Frequency

65mA 80mA

GHz GHz

1.E+08

85C lead temp

1.E+07

1.E+06

MTTF (hrs)

1.E+05

1.E+04

0.25 0.35 0.45

Pdiss (W)

21

19

dBm

17

15

13

Output P1dB vs. ID vs. Frequency

0.5 1.5 2.5 3.5

65mA 80mA

NF vs. ID vs. Frequency Small Signal Gain vs. ID vs. Frequency

65mA 80mA

4.25

dB

4.5

4

3.75

3.5

0.5 1 1.5 2

GHz

20

65mA 80mA

dB

19

18

17

16

15

0.5 1.5 2.5 3.5

3

GHz

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EDS-101397 Rev A

SNA-586 DC-5GHz Cascadable MMIC Amplifier

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Application Schematic for Operation at 850 MHz

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50 ohm

microstrip

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3

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4

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microstrip

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2

1

3

4

Rbias

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microstrip

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http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

VS

EDS-101397 Rev A

Preliminary

SNA-586 DC-5GHz Cascadable MMIC Amplifier

S21, I

=65mA, T=25°C

25

D

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=65mA, T=25°C

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20

15

10

5

02468

Frequency GHz

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D

Frequency GHz

S11, I

=65mA, Ta=25°C

D

Freq. Min = 0.05 GHz

Freq. Max = 10 GHz

-15

dB

-20

-25

02468

Frequency GHz

S22, I

=65mA, T=25°C

0

-5

-10

dB

-15

-20

-25

02468

D

Frequency GHz

S22, I

=65mA, Ta=25°C

D

Freq. Min = 0.05 GHz

Freq. Max = 10 GHz

F = 10 GHz

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

5

EDS-101397 Rev A

VS

Cblock

IN

STANFORD MICRODEVICES

ECB-100330 Rev B

SOT-86 Eval Board

Evaluation Board Layout

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SNA-586 DC-5GHz Cascadable MMIC Amplifier

Part Number Ordering Information

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685-ANS"70001

Caution ESD Sensitive:

Appropriate precautions in handling, packaging and testing devices must be observed.

Part Symbolization

The part will be symbolized with an “S5” designator on

the top surface of the package.

PCB Pad Layout

S5

Preliminary

Dimensions are in inches [mm]

S5

Package Dimensions

6

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EDS-101397 Rev A

Datasheet SNA-586 Datasheet (Stanford Microdevices)

Specifications and Main Features

Frequently Asked Questions

User Manual