Datasheet SNA-576 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SNA-576 is a GaAs monolithic
broadband amplifier housed in a low-cost stripline ceramic
package. This amplifier provides 19dB of gain when biased
at 70mA and 5.0V.

External DC decoupling capacitors determine low fre­quency response. The use of an external resistor allows
for bias flexibility and stability.

These unconditionally stable amplifiers are designed for
use as general purpose 50 ohm gain blocks. Also
available in chip form (SNA-500), its small size (0.4mm x

0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.

The SNA-576 is available in tape and reel at 1000, 3000 and
5000 devices per reel.

Output Power vs. Frequency

22

20

18

dB

16

14

12

0.112345

GHz

SNA-576

DC-3 GHz, Cascadable
GaAs MMIC Amplifier

Product Features

• Cascadable 50 Ohm Gain Block

• 19dB Gain, +18dBm P1dB

• 1.5:1 Input and Output VSWR

• Operates From Single Supply

• Low Cost Stripline Mount Ceramic Package

• Hermetically Sealed

Applications

• Narrow and Broadband Linear Amplifiers

• Commercial and Industrial Applications

50 Ohm Gain Blocks

Electrical Specifications at Ta = 25C

Symbol

G

G

BW 3dB 3dB Bandw idth GHz 3.0

P

NF N oise Figure f = 2.0 GH z dB 4.2 5.0

VS WR Input / Output f = 0.1-8.0 GH z 1.5:1

IP

T

ISOL Reverse Isolation f = 0.1-8.0 G Hz dB 22.0

VD Device Voltage V 4 .3 5.0 5 .7
dG/dT
dV/dT Device Voltage Tem perature C oefficient m V/degC -5.0

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Parameters: Test Conditions:
Id = 70m A, Z

Sm all Signal P ower Gain

P

G ain Flatness f = 0.1-2.0 G Hz dB +/- 1.0

F

O utput Power at 1dB Com pression f = 2.0 GH z dBm 18.0

1dB

Third Order Intercept Point f = 2.0 GH z dBm 34.0

3

G roup Delay f = 2.0 GH z psec 120

D

Device G

= 50 O hms

0

ain

Tem perature Coefficient

f = 0.1-1.0 G Hz
f = 1.0-2.0 G Hz
f = 2.0-3.0 G Hz

Units Min. Typ . M ax.

dB
dB
dB

dB/degC -0.0027

18.0

16.0

15.0

20.0

18.0

17.0

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SNA-576 DC-3 GHz Cascadable MMIC Amplifier

Typical Performance at 25

°°

°

C (Vds = 5.0V , Ids = 70mA)

°°

0

-5

-10

dB

-15

-20

|S11| vs. Frequency

0.112345

|S12| vs. Frequency

0

-5

-10

dB

-15

-20

-25

50 Ohm Gain Blocks

0.112345

Noise Figure vs. Frequency

6

5

dB

4

3

0.11.02345

GHz

GHz

GHz

|S21| vs. Frequency

0.112345

GHz

dB

22

20

18

16

14

12

|S22| vs. Frequency

0

-5

-10

dB

-15

-20

0.112345

TOIP vs. Frequency

0.112345

dBm

38

36

34

32

30

28

GHz

GHz

Typical S-Parameters Vds = 5.0V, Ids = 70mA

Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang

.100 0.219 156 10.104 -76 0.065 106 0.178 -124

.250 0.146 173 10.087 -44 0.078 147 0.110 -152

.500 0.179 110 8.744 134 0.079 -26 0.152 131

1.00 0.190 51 8.302 92 0.080 -49 0.180 85

1.50 0.183 -7 7.747 46 0.081 -76 0.212 33

2.00 0.153 -56 7.348 5 0.083 -100 0.230 -13

2.50 0.106 -106 6.651 -40 0.085 -128 0.233 -63

3.00 0.050 -153 5.943 -78 0.087 -154 0.219 -107

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-74

SNA-576 DC-3 GHz Cascadable MMIC Amplifier

Absolute Maximum Ratings

Parameter

Devic e Current 100m A

Power Dissipation 560mW

RF In pu t Po we r 200m W

Junction Temperature +200C

Operating Temperature -45C to +85C

Storage Temperature -65C to +150C

Notes:

1. Operation of this device above any one of
these parameters may cause permanent
damage.

Absolute

Maximum

MTTF vs. Temperature @ Id = 70mA

Lead Temperature

+45C +155C 1000000

+80C +190C 100000

+110C +220C 10000

Thermal Resistance (Lead-Junction): 315° C/W

Junction

Temperature

MTTF (hrs)

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

SNA-576-TR1 1000 7"

SNA-576-TR2 3000 13"

SNA-576-TR3 5000 13"

Recommended Bias Resistor Values

Supply

Voltage(Vs)

Rbias (Ohms) * 36 57 100 143 214

* Needs active biasing for constant current source

5V 7.5V 9V 12V 15V 20V

5.0

Typical Biasing Configuration

Pin Designation

1RF in
2GND

RF out

3

and Bias

4GND

6.0

50 Ohm Gain Blocks

°°

°

C

°°

Device Voltage vs. Current - Id

6

5.5

5

Vdc

4.5

4

65 70 75 80 85 90 95

mA

Power Gain vs. Device Current

21
20
19
18
17

dB

16
15
14
13
12

012345

GHz

Typical Performance at 25

80mA

70mA
60mA
50mA

40mA

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

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