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Product Description
Stanford Microdevices’ SNA-500 is a GaAs monolithic
broadband amplifier in die form. This amplifier provides
19dB of gain when biased at 70mA and 5.0V. P1dB and
TOIP may be improved by 2dB by baising @ 100mA.
External DC decoupling capacitors determine low frequency response. The use of an external resistor allows
for bias flexibility and stability.
These unconditionally stable amplifiers are designed for
use as general purpose 50 ohm gain blocks. Also
available in packaged form (SNA-576, -586 & -587), its
small size (0.4mm x 0.4mm) and gold metallization make it an
ideal choice for use in hybrid circuits.
The SNA-500 is available in gel paks at 100 devices per
container.
Output Power vs. Frequency
22
20
18
dB
16
14
12
0.112345
GHz
SNA-500
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
• Cascadable 50 Ohm Gain Block
• 19dB Gain, +18dBm P1dB
• 1.5:1 Input and Output VSWR
• Operates From Single Supply
• Chip Back Is Ground
Applications
• Narrow and Broadband Linear Amplifiers
• Commercial and Industrial Applications
50 Ohm Gain Blocks
Electrical Specifications at Ta = 25C
Symbol
G
G
BW 3dB 3dB Bandw idth GHz 3.0
P
NF N oise Figure f = 2.0 GH z dB 4.2 5.0
VS WR Input / Output f = 0.1-8.0 GH z 1.5:1
IP
T
ISOL Reverse Isolation f = 0.1-8.0 G Hz dB 22.0
VD Device Voltage V 4 .3 5.0 5 .7
dG/dT
dV/dT Device Voltage Tem perature C oefficient m V/degC -5.0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Parameters: Test Conditions:
Id = 70m A, Z
Sm all Signal P ower Gain
P
G ain Flatness f = 0.1-2.0 G Hz dB +/- 1.0
F
O utput Power at 1dB Com pression f = 2.0 GH z dBm 18.0
1dB
Third Order Intercept Point f = 2.0 GH z dBm 34.0
3
G roup Delay f = 2.0 GH z psec 120
D
Device G
= 50 O hms
0
ain
Tem perature Coefficient
f = 0.1-1.0 G Hz
f = 1.0-2.0 G Hz
f = 2.0-3.0 G Hz
Units Min. Typ . M ax.
dB
dB
dB
dB/degC -0.0027
18.0
16.0
15.0
20.0
18.0
17.0
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SNA-500 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds = 5.0V , Ids = 70mA)
°°
0
-5
-10
dB
-15
-20
0.112345
|S12| vs. Frequency
0
-5
-10
dB
-15
-20
-25
|S11| vs. Frequency
50 Ohm Gain Blocks
0.112345
Noise Figure vs. Frequency
6
5
dB
4
3
0.11.02345
GHz
GHz
GHz
22
20
18
dB
16
14
12
0.112345
GHz
|S22| vs. Frequency
|S21| vs. Frequency
0
-5
-10
dB
-15
-20
0.112345
GHz
TOIP vs. Frequency
38
36
34
dBm
32
30
28
0.112345
GHz
Typical Chip S-Parameters Vds = 5.0V, Ids = 70mA
Freq GH z |S 11| S11 Ang |S2 1| S21 Ang |S 12 | S12 Ang |S2 2| S22 Ang
.100
.250
.500
1.00
1.50
2.00
2.50
3.00
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
0.162 149 10.39 175 0.059 -4 0.128 -176
0.158 152 10.42 169 0.062 0 0.132 -165
0.151 163 10.49 163 0.068 2 0.141 -160
0.147 175 10.53 159 0.074 4 0.152 -151
0.140 178 10.61 146 0.076 6 0.204 -148
0.129 -178 10.64 137 0.077 8 0.243 -149
0.125 -167 10.54 122 0.079 10 0.293 -155
0.136 -156 10.25 111 0.082 11 0.323 -160
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SNA-500 DC-3 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Parameter
Device Current 130mA
Power Dissipation 750mW
RF Input Power 200mW
Junction Temperature +200C
Operating Temperature -45C to +85C
Storage Temperature -65C to +150C
Absolute
Maximum
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
MTTF vs. T emperature @ Id = 70mA
Die Bottom
Temperature
+65C +155C 1000000
+100C +190C 100000
+130C +220C 10000
Thermal Resistance (Lead-Junction): 265° C/W
Junction
Temperature
MTTF (hrs)
Die Attach
The die attach process mechanically attaches the die to
the circuit substrate. In addition, it electrically connects
the ground to the trace on which the die is mounted and
establishes the thermal path by which heat can leave the
die.
Assembly Techniques
Epoxy die attach is recommended. The top and bottom
metallization is gold. Conductive silver-filled epoxies are
recommended. This method involves the use of epoxy to
form a joint between the backside gold of the chip and
the metallized area of the substrate. A 150 C cure for 1
hour is necessary. Recommended epoxy is Ablebond
84-1LMIT1 from Ablestik.
Part Number Ordering Information
Part Number Devices Per Pak
SNA-500 100
6.0
5.0
50 Ohm Gain Blocks
Typical Biasing Configuration
Wire Bonding
Electrical connections to the die are through wire
bonds. Stanford Microdevices recommends wedge
bonding or ball bonding to the pads of these devices.
Recommended Wedge Bonding Procedure
1. Set the heater block temperature to 260C +/- 10C.
2. Use pre-stressed (annealed) gold wire between
0.0005 to 0.001 inches in diameter.
3. Tip bonding pressure should be between 15 and
20 grams and should not exceed 20 grams. The
footprint that the wedge leaves on the gold wire
should be between 1.5 and 2.5 wire diameters
across for a good bond.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
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