Datasheet SNA-476 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SNA-476 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface
mountable stripline ceramic package. This amplifier
provides 13dB of gain when biased at 70mA and 5.0V.

External DC decoupling capacitors determine low
frequency response. The use of an external resistor
allows for bias flexibility and stability.

These unconditionally stable amplifiers are designed for
use as general purpose 50 ohm gain blocks. Also available
in chip form (SNA-400), its small size (0.4mm x 0.4mm) and
gold metallization, make it an ideal choice for use in hybrid
circuits.

The SNA-476 is available in tape and reel at 1000, 3000 and
5000 devices per reel.

Output Power vs. Frequency

22

20

18

dBm

16

14

0.10.511.5246810

GHz

SNA-476

DC-8 GHz, Cascadable
GaAs MMIC Amplifier

Product Features

• Cascadable 50 Ohm Gain Block

• 13dB Gain, +17dBm P1dB

• 1.5:1 Input and Output VSWR

• Operates From Single Supply

• Low Cost Stripline Mount Ceramic Package

• Hermetically Sealed

Applications

• Narrow and Broadband Linear Amplifiers

• Commercial and Industrial Applications

50 Ohm Gain Blocks

Electrical Specifications at Ta = 25C

Symbol

G

G

BW 3dB 3dB B andwidth GHz 8.0

P

NF N oise Figure f = 2.0 GH z dB 5.5 6.0

VS WR Input / O utput f = 0.1-8.0 GH z 1.5:1

IP

T

ISO L Reverse Isolation f = 0.1-8.0 GH z dB 18.0

VD D evice Voltage V 4 .3 5 .0 5 .7
dG /dT D evice Gain Tem perature C oefficient dB/degC -0.0027
dV/dT Device Voltage Tem perature Coefficient m V/degC -5.0

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

P ara m e ters : Tes t C on d itio ns :
Id = 70m A, Z

Sm all Signal Power Gain

P

G ain Flatness f = 0.1-6.0 GH z dB +/- 1.0

F

O utput Power at 1dB C ompression f = 2.0 GH z dBm 17.0

1dB

Third Order Intercept P oint f = 2.0 GH z dBm 34.0

3

G roup D elay f = 2.0 G Hz psec 120

D

= 50 O hms

0

f = 0.1-2.0 GH z
f = 2.0-6.0 GH z
f = 6.0-8.0 GH z

Units Min. Typ . M ax.

dB
dB
dB

11 .0

10.0

9.0

13.0

12.0
11 .0

5-57

SNA-476 DC-8 GHz Cascadable MMIC Amplifier

Typical Performance at 25

°°

°

C (Vds = 5.0V , Ids = 70mA)

°°

0

-5

-10

dB

-15

-20

-25

0.10.511.5246810

|S12| vs. Frequency

|S11| vs. Frequency

0

-5

-10

dB

-15

-20

-25

0.1 0.5 1 1.5 2 4 6 8 10

50 Ohm Gain Blocks

Noise Figure vs. Frequency

7

6

dB

5

4

0.1 2.0 4.0 6.0 8.0

GHz

GHz

GHz

16

|S21| vs. Frequency

14

12

dB

10

8

0.10.511.5246810

GHz

|S22| vs. Frequency

0.1 0.5 1 1.5 2 4 6 8 10

GHz

TOIP vs. Frequency

0.10.511.5246810

GHz

dB

dBm

0

-5

-10

-15

-20

-25

38

36

34

32

30

28

Typical S-Parameters Vds = 5.0V, Id = 70mA

Freq GHz |S11| S11 Ang |S2 1| S21 Ang |S12| S12 Ang |S2 2| S22 Ang

.100 0.205 148 5.268 176 0.112 0 0.141 160
.250 0.233 136 5.124 166 0.111 9 0.157 150
.500 0.282 120 4.891 139 0.119 -29 0.185 121

1.00 0.295 64 4.793 101 0.118 -55 0.207 68

1.50 0.302 6 4.746 60 0.117 -87 0.227 13

2.00 0.290 -46 4.774 21 0.117 -113 0.231 -37

4.00 0.150 74 3.740 57 0.104 7 0.222 -90

6.00 0.164 -52 3.331 61 0.151 -2 0.130 1

8.00 0.275 161 2.973 -109 0.100 -115 0.190 147

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-58

SNA-476 DC-8 GHz Cascadable MMIC Amplifier

A

A

y

Absolute Maximum Ratings

Parameter

Device Current 100mA

Power Dissipation 560mW

RF Input Power 200mW

Junction Temperature +200C

Operating Temperature -45C to +85C

Storage Temperature -65C to +150C

Absolute

Maximum

Notes:

1. Operation of this device above any one of these
parameters may cause permanent damage.

MTTF vs. Temperature @ Id = 70mA

Lead Temperature

+45C +155C 1000000

+80C +190C 100000

+110C +220C 10000

Thermal Resistance (Lead-Junction): 315° C/W

Junction

Temperature

MTTF (hrs)

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

SNA-476-TR1 1000 7"

SNA-476-TR2 3000 13"

SNA-476-TR3 5000 13"

Recomm ended Bias Resistor Values

Suppl

Voltage(Vs)

Rbias (Ohms) * 36 57 100 143 214

* Needs active biasing for constant current source

5V 7.5V 9V 12V 15V 20V

5.0

Typical Biasing Configuration

Pin Designation

1RF in
2GND

RF out and

3

Bias

4GND

6.0

50 Ohm Gain Blocks

Typical Performance at 25° C

Power Gain vs. Device Current

14

13

12

dB

11

10

9

2468

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

90mA

50m

GHz

80m
70mA
60mA

Vdc

5-59

Device Voltage vs. Id

5.5

5

4.5

4

3.5
45 50 60 65 70 75 80

mA