Datasheet SNA-386-TR1, SNA-386-TR2, SNA-386-TR3 Datasheet (Stanford Microdevices)

Product Description

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g

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Stanford Microdevices’ SNA-386 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface­mountable plastic package. This amplifier provides 21dB of
gain when biased at 35mA and 4V.

The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.

Also available in chip form (SNA-300), its small size (0.3mm
x 0.3mm) and gold metallization make it an ideal choice for
use in hybrid circuits.

SNA-386

DC-3 GHz, Cascadable
GaAs MMIC Amplifier

The SNA-386 is available in tape and reel at 1000, 3000 and
5000 devices per reel.

Product Features

• Patented GaAs HBT T echnology

• Cascadable 50 Ohm Gain Block

• 21dB Gain, +23dBm TOIP

Output Power vs. Frequency

16

14

dBm

12

10

8

0.10.511.522.533.54

GHz

Electrical Specifications at Ta = 25C

Sym bol

G

BW 3dB 3dB Ba ndwidth GHz 2.5

P

NF Noise Fi

VSW R Input / O utput f = 0.1-3.0 GH z - 1.7:1

IP
TD Group Delay f = 2.0 GHz psec 100

ISO L R everse Isolatio n f = 0.1-3.0 GH z dB 22

VD D evice Voltage V 3.544.5
dG/dT Device G ain Temperature C oefficient dB/de
dV/dT Device Volta

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

P aram ete rs: Tes t Co n ditio ns:
Id = 35m A, Z

Small Signal P ower Gain

P

Output Pow er a t 1dB C om pression

1dB

Third O rder Inte rcept Poin t f = 2.0 GH z dBm 23

3

= 50 Oh ms

0

ure

e Temperature Coe fficient m V/degC-4.0

• Operates From Single Supply

• Low Cost Surface Mount Plastic Package

Applications

• Narrow and Broadband Linear Amplifiers

• Commercial Communication Applications

Units Min. Ty p . M ax.

f = 0.1-1.0 GH z
f = 1.0-2.0 GH z
f = 2.0-3.0 GH z

f = 0.1-2.0 GH z
f = 2.0-3.0 GH z

f = 0.1-2.0 GH z
f = 2.0-3.0 GH z

5-45

dB
dB
dB

dBm

dB

19
18
16

C -0.003

21
20
18

10
11

4
4

50 Ohm Gain Blocks

SNA-386 DC-3 GHz Cascadable MMIC Amplifier

Typical Performance at 25

0

-10

-20

dB

-30

-40

0

-5

-10

-15

dB

-20

-25

-30

50 Ohm Gain Blocks

5

4.5

4

dB

3.5

3

Typical S-Parameters Vds = 4.0V, Id = 35mA

|S11| vs. Frequency

0.1 0.5 1 1.5 2 2.5 3

|S12| vs. Frequency |S22| vs. Frequency

0.1 0.5 1 1.5 2 2.5 3

Noise Figure vs. Frequency

0.1 0.5 1 .0 1.5 2 2.5 3

°°

°

C (Vds = 4.0V , Ids = 35mA)

°°

GHz

GHz

GHz

23

21

19

dB

17

15

0.10.511.522.53

GHz

0

-10

-20

dB

-30

-40

0.1 0.5 1 1.5 2 2.5 3

GHz

TOIP vs. Frequency

30

28

26

dBm

24

22

20

0.10.511.522.53

GHz

|S21| vs. Frequency

Freq GH z |S11| S11 Ang |S 21 | S21 Ang |S 12 | S12 Ang |S22 | S2 2 Ang

.100

.250

.500

1.00

1.50

2.00

2.50

3.00

3.50

4.00

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

0.175 104 12.985 145 0.054 52 0.158 122

0.193 96 12.850 136 0.059 25 0.15 6 105

0.221 89 12.763 126 0.060 -20 0.211 96

0.229 27 11.614 85 0.065 -39 0.222 39

0.218 -40 10 .280 39 0.071 -65 0. 226 -24

0.191 -99 9.112 -2 0.077 -89 0.223 -78

0.157 -1 62 7.69 8 -45 0.083 -119 0.22 2 -136

0.130 136 6.849 -78 0.08 8 -146 0.221 17 0

0.115 70 6.423 -120 0. 093 -174 0.217 114

0.113 28 5.910 -156 0. 097 155 0.20 6 70

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

5-46

SNA-386 DC-3 GHz Cascadable MMIC Amplifier

y

Absolute Maximum Ratings

Parameter

Device Current 75mA

Power Dissipation 330mW

RF Input Power 100m W

Junction Temperature +200C

Operating Temperature -45C to +85C

Storage Temperature -65C to +150C

Notes:

1. Operation of this device above any one of
these parameters may cause permanent
damage.

Absolute

Maximum

MTTF vs. T emperature @ Id = 35mA

Lead

Temperature

+95C +155C 1000000

+130C +1 90C 100000

+160C +2 20C 10000

Thermal Resistance (Lead-Junction): 432° C/W

Junction

Temperature

MTTF (hrs)

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

SNA-386-TR1 1000 7"

SNA-386-TR2 3000 13"

SNA-386-TR3 5000 13"

Recomm ended Bias Resistor Values

Suppl

Voltage(Vs)

Rbias (Ohms) 29 100 143 229 314 457

5V 7.5V 9V 12V 15V 20V

Typical Biasing Configuration

50 Ohm Gain Blocks

Pin Designation

1RF in
2GND

RF out

3

and Bias

4GND

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-47