Datasheet SNA-376 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SNA-376 is a GaAs monolithic broad­band amplifier (MMIC) housed in a low-cost surface mount­able stripline package. This amplifier provides 22dB of gain
when biased at 35mA and 4V.

External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.

These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in chip
form (SNA-300), its small size (0.33mm x 0.33mm) and gold
metallization make it an ideal choice for use in hybrid circuits.

The SNA-376 is available in tape and reel at 1000, 3000 and
5000 devices per reel.

Output Power vs. Frequency

12

11

10

dBm

9

8

0.10.511.5246810

GHz

SNA-376

DC-3 GHz, Cascadable
GaAs MMIC Amplifier

Product Features

• Cascadable 50 Ohm Gain Block

• 22dB Gain, +10dBm P1dB

• 1.5:1 Input and Output VSWR

• Operates From Single Supply

• Low Cost Stripline Mount Ceramic Package

• Hermetically Sealed

Applications

• Narrow and Broadband Linear Amplifiers

• Commercial and Industrial Applications

50 Ohm Gain Blocks

Electrical Specifications at Ta = 25C

Symbol

G

G

BW 3dB 3dB B andwidth GHz 3.0

P

NF Noise Figure f = 2.0 G Hz dB 4.0 5.0

VS WR Input / O utput f = 0.1-3.0 GH z 1.5:1

IP
T

ISO L Reverse Isolation f = 0.1-3.0 GH z dB 22.0

VD D evice Voltage V 3 .5 4 .0 4 .5
dG /dT Device G ain Temperature Coefficient dB/degC -0.003
dV/dT Device Voltage Tem pera ture Coefficient m V/degC -4.0

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

P ara m ete rs: Tes t Co nd ition s:
Id = 3 5 m A , Z0 = 50 O hms

Small Signal Power G ain

P

G ain Flatness f = 0.1-3.0 GH z dB +/- 1.5

F

O utput Power at 1dB C ompression: f = 2.0 G Hz dBm 10.0

1dB

Third O rder Intercept Point f = 2.0 G Hz dBm 23.0

3

G roup Delay f = 2.0 GH z psec 100

D

f = 0.1-1.0 GH z
f = 1.0-2.0 GH z
f = 2.0-3.0 GH z

Units Min. Typ . Max.

dB
dB
dB

21.0

20.0

19.0

23.0

22.0

21.0

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SNA-376 DC-3 GHz Cascadable MMIC Amplifier

Typical Performance at 25

°°

°

C (Vds = 4.0V , Ids = 35mA)

°°

0

-10

-20

dB

-30

-40

0.10.511.522.533.54

|S12| vs. Frequency |S22| vs. Frequency

|S11| vs. Frequency

0

-5

-10

-15

dB

-20

-25

-30

0.1 0.5 1 1.5 2 2.5 3 3.5 4

50 Ohm Gain Blocks

Noise Figure vs. Frequency

5

4.5

4

dB

3.5

3

0.1 0.5 1.0 1.5 2.0 2.5 3.0

Typical S-Parameters Vds = 4.0V, Ids = 35mA

GHz

GHz

GHz

23

21

19

dB

17

15

0.1 0.5 1 1.5 2 2.5 3 3.5 4

GHz

0

-10

-20

dB

-30

-40

0.10.511.522.533.54

GHz

TOIP vs. Frequency

26

24

dBm

22

20

|S21| vs. Frequency

0.511.522.533.54

GHz

Freq GHz |S11| S11 Ang |S21| S21 Ang |S1 2| S12 Ang |S22| S22 Ang

.100 0.156 137 13.945 177 0.091 49 0.114 145
.250 0.196 125 13.921 171 0.089 25 0.201 131
.500 0.245 108 13.853 133 0.056 -21 0.238 112

1.00 0.250 45 12.767 89 0.058 -41 0.254 54

1.50 0.235 -17 11.604 45 0.063 -67 0.262 -4

2.00 0.201 -70 10.635 4 0.068 -90 0.255 -56

4.00 0.077 3 7.199 -152 0.086 153 0.174 68

6.00 0.109 -28 5.010 64 0.094 33 0.251 -122

8.00 0.250 174 3.981 -84 0.099 -93 0.107 6

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-42

SNA-376 DC-3 GHz Cascadable MMIC Amplifier

y

Absolute Maximum Ratings

Parameter

Device Current 75mA

Power Dissipation 300mW

RF Input Power 20mW

Junction Temperature +200C

Operating Temperature -45C to +85C

Storage Temperature -65C to +150C

Absolute

Maximum

Notes:

1. Operation of this device above any one of
these parameters may cause permanent
damage.

MTTF vs. T emperature @ Id = 35mA

Lead Temperature

+55C +120C 10000000

+90C +155C 1000000

+125C +190C 100000

Thermal Resistance (Lead-Junction): 457° C/W

Junction

Temperature

MTTF (hrs )

Part Number Ordering Information

Part Number Devices Per Reel Re el Size

SNA-376-TR1 1000 7"

SNA-376-TR2 3000 13"

SNA-376-TR3 5000 13"

Recomm ended Bias Resistor Values

Suppl

Voltage(Vs)

Rbias (Ohms) 29 100 143 229 314 457

5V 7.5V 9V 12V 15V 20V

Typical Biasing Configuration

Pin Designation

1RF in
2GND

RF out

3

and Bias

4GND

50 Ohm Gain Blocks

Typical Performance at 25

Power Gain vs. Device Current

17

16

15

dB

14

13

12

0.2 0. 5 1.0 1.25 1.5 1.75 2.0

GHz

60mA

50mA

40mA

30mA
25mA

Vdc

°°

°

C

°°

Device Voltage vs. Id

5

4.5

4

3.5

3

20 25 30 35 40 45 50

mA

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

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