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Product Description
Stanford Microdevices SNA-286 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface-mountable plastic package. This amplifier provides 15dB of gain
and +14dBm of P1dB power when biased at 50mA and 4V.
The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.
Also available in chip form (SNA-200), its small size (0.33mm
x 0.33mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
SNA-286
DC-6.0 GHz, Cascadable
GaAs MMIC Amplifier
The SNA-286 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Product Features
• Patented, Reliable GaAsHBT T echnology
• Cascadable 50 Ohm Gain Block
• 15dB Gain, +14dBm P1dB
Output Power vs. Frequency
16
15
14
dBm
13
12
0.10.511.52346
GHz
Electrical Specifications at Ta = 25C
Symbol
G
BW 3dB 3dB B andwidth GHz 4.5
P
NF N oise Figure
VS WR Input / O utput f = 0.1-6.0 GH z 1.5:1
IP
T
ISO L Reverse Isolation f = 0.1-6.0 GH z dB 20
VD D evice Voltage V 3 .5 4 .0 4 .5
dG/dT
dV/dT Device Voltage Tem perature Coefficient m V/degC -4.0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
P ara m e ters : Tes t C on d itio ns :
Id = 50m A, Z
Sm all Signal Power Gain
P
O utput Power at 1dB C ompression:
1dB
Third Order Intercept P oint
3
G roup D elay f = 2.0 GH z psec 100
D
D evice
= 50 O hms
0
Gain
Tem perature Coefficient
• 1.5:1 Input and Output VSWR
• Operates From Single Supply
• Low Cost Surface Mount Plastic Package
Applications
• Narrow and Broadband Linear Amplifiers
• Commercial Communication Applications
Units Min. Typ . M ax.
f = 0.1-2.0 GH z
f = 2.0-4.0 GH z
f = 4.0-6.0 GH z
f = 0.1-4.0 GH z
f = 4.0-6.0 GH z
f = 0.1-2.0 GH z
f = 4.0-6.0 GH z
f = 0.1-4.0 GH z
f = 4.0-6.0 GH z
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dB
dB
dB
dBm
dB
dBm
m V/degC -0.0018
13.0
11 .0
10.0
15.0
13.0
12.0
14.0
13.0
5.5
6.5
27.0
26.0
50 Ohm Gain Blocks
Page 2
SNA-286 DC-6.0 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds = 4.0V , Ids = 50mA)
°°
0
-5
-10
-15
dB
-20
-25
-30
0.1 0.5 1 1.5 2 3 4 6
|S12| vs. Frequency
|S11| vs. Frequency
0
-5
-10
dB
-15
-20
0.1 0.5 1 1.5 2 3 4 6
50 Ohm Gain Blocks
Noise Figure vs. Frequency
7
6.5
6
dB
5.5
5
0.1 0.5 1 1.5 2 3 4 6
Typical S-Parameters Vds = 4.0V, Id = 50mA
GHz
GHz
GHz
16
14
dB
12
10
0.1 0.5 1 1.5 2 3 4 6
GHz
|S22| vs. Frequency
0
-5
-10
-15
dB
-20
-25
-30
|S21| vs. Frequency
0.1 0.5 1 1.5 2 3 4 6
TOIP vs. Frequency
0.1 0.5 1 1.5 2 3 4 6
dBm
28
27
26
25
24
GHz
GHz
Freq GH z |S 11| S11 Ang |S21 | S21 Ang |S 12 | S12 Ang |S 22 | S22 Ang
.100
.250
.500
1.00
1.50
2.00
3.00
4.00
6.00
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
0.158 -166 5.888 176 0.122 -138 0.088 -151
0.197 109 5.785 171 0.121 99 0.135 92
0.228 170 5.721 168 0.119 48 0.155 173
0.221 143 5.591 157 0.120 4 0.161 143
0.210 115 5.495 146 0.124 5 0.160 112
0.154 99 5.248 135 0.127 4 0. 120 96
0.196 89 4.749 118 0.133 6 0.197 86
0.078 24 4.390 99 0.136 5 0.130 43
0.041 -40 3.780 68 0.144 2 0.182 -3
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
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SNA-286 DC-6.0 GHz Cascadable MMIC Amplifier
y
Absolute Maximum Ratings
Parameter
Device Current 75mA
Power Dissipation 330m W
RF Input Power 100mW
Junction Temperature +200C
Operating Temperature -45C to +85C
Storage Temperature -65C to +150C
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Absolute
Maximum
MTTF vs. Temperature @ Id = 50mA
Lead
Temperature
+50C +155C 10000 00
+85C +190C 100 000
+115C +220C 10000
Thermal Resistance (Lead-Junction): 531° C/W
Junction
Temperature
M T T F (h rs)
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
SNA-286-TR1 1000 7"
SNA-286-TR2 3000 13"
SNA-286-TR3 5000 13"
Recomm ended Bias Resistor Values
Suppl
Voltage(Vs)
Rbias (Ohms) 20 70 100 160 220 320
5V 7.5V 9V 12V 15V 20V
Typical Biasing Configuration
50 Ohm Gain Blocks
Pin Designation
1RF in
2GND
RF out and
3
Bias
4GND
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
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