Datasheet SNA-276 Datasheet (Stanford Microdevices)

Product Description

g

g

Stanford Microdevices’ SNA-276 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface
mountable stripline package. This amplifier provides 16dB of
gain when biased at 50mA and 4V.

External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.

These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in
chip form (SNA-200), its small size (0.33mm x 0.33mm) and
gold metallization, make it an ideal choice for use in hybrid
circuits.

The SNA-276 is available in tape and reel at 1000, 3000 and
5000 devices per reel.

Output Power vs. Frequency

16

15

14

dBm

13

12

0.5 1 1.5 2 4 6 8 10

GHz

SNA-276

DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier

Product Features

• Cascadable 50 Ohm Gain Block

• 16dB Gain, +14dBm P1dB

• 1.5:1 Input and Output VSWR

• Operates From Single Supply

• Low Cost Stripline Mount Ceramic Package

• Hermetically Sealed

Applications

• Narrow and Broadband Linear Amplifiers

• Commercial and Industrial Applications

50 Ohm Gain Blocks

Electrical Specifications at T a = 25

Symbol

G

G

BW 3dB 3dB Bandwidth GH z 6.5

P

1dB

NF Noise Fi

VSW R Input/Output f = 0.1-6.5 GHz

IP

T

ISOL Reverse Isolation f = 0.1-6.5 GHz dB 20

V
dG/dT D evice G
dV/dT Device Volta

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

P aram e ters : Test C ond ition s:
Id = 50m A, Z0 = 50 Ohm s

S m a ll S ignal Power Gain

P

Gain Flatness f = 0.1-4.0 GHz dB +/1.0

F

Output P ower at 1dB Com pression f = 2.0 GHz dBm 14.0

ure f = 2.0 GHz dB 5.5 6.0

Third Order Intercept P oint f = 2.0 GHz dBm 27.0

3

Group Delay f = 2.0 GH z psec 100

D

Device Voltage V 3 .5 4 .0 4 .5

D

Coefficient

Temperature Coefficient

ain

e Temperature

°°

° C

°°

f = 0.1-2.0 GHz
f = 2.0-4.0 GHz
f = 4.0-6.5 GHz

5-25

Units Min. Typ . Max.

dB
dB
dB

-

/d egC

dB

mV/degC-4.0

15.0

14.0

13.0

16.0

15.0

14.0

1.5:1

-0.0018

SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier

0

-5

-10

-15

dB

-20

-25

-30

0.1 0.5 1 1.5 2 3 4 6

|S12| vs. Frequency

|S11| vs. Frequency

0

-5

-10

dB

-15

-20

-25

0.10.511.5246810

50 Ohm Gain Blocks

Noise Figure vs. Frequency

8

7.5
7

6.5

dB

6

5.5
5

0.10.511.5246810

GHz

GHz

GHz

18

17

16

15

dB

14

13

12

|S21| vs. Frequency

0.10.511.5 2 4 6

GHz

|S22| vs. Frequency

0

-5

-10

dB

-15

-20

0.1 0.5 1 1.5 2 4 6 8 10

GHz

TOIP vs. Frequency

28

27

26

dBm

25

24

0.10.511.5246810

GHz

Typical S-Parameters Vds = 4.0V, Ids = 50mA

Freq GHz |S1 1 | S11 Ang |S21| S21 A ng |S12| S12 A ng |S22| S22 An g

.100 0.114 157 6.885 166 0.082 -7 0.083 145
.250 0.145 135 6.785 142 0.098 -14 0.095 126
.500 0.152 114 6.659 139 0.106 -28 0.117 115

1.00 0.171 57 6.467 101 0.106 -53 0.141 62

1.50 0.182 1 6.259 60 0.106 -83 0.166 5

2.00 0.170 -50 6.103 22 0.108 -109 0.173 -46

4.00 0.087 38 5.130 -132 0.114 132 0.146 73

6.00 0.130 -76 4.107 81 0.111 12 0.260 -108

8.00 0.208 -132 3.688 -72 0.108 -119 0.103 -22

10.00 0.391 -149 2.962 118 0.081 99 0.346 177

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-26

SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier

y

Absolute Maximum Ratings

Parameter

Device Current 70mA

Power Dissipation 320mW

RF Input Power 100mW

Junction Temperature +200C

Operating Temperature -45C to +85C

Storage Temperature -65C to +150C

Absolute

Maximum

Notes:

1. Operation of this device above any one of
these parameters may cause permanent
damage.

MTTF vs. Temperature @ Id = 50mA

Lead Temperature

+45C +155C 1000000

+80C +190C 100000

+110C +220C 10000

Thermal Resistance (Lead-Junction): 556° C/W

Junction

Temperature

MTTF (hrs)

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

SNA-276-TR1 1000 7"

SNA-276-TR2 3000 13"

SNA-276-TR3 5000 13"

Recomm ended Bias Resistor Values

Suppl

Voltage(Vs)

Rbias (Ohms) 20 70 100 160 220 320

5V 7.5V 9V 12V 15V 20V

Typical Biasing Configuration

Pin Designation

1RF in
2GND

RF out and

3

Bias

4GND

50 Ohm Gain Blocks

°°

°

C

°°

Device Voltage vs. Id

5

4.5

4

3.5

3

25 30 40 50 60 70 80

mA

Power Gain vs. Device Current

17

16

15

dB

14

13

12

0.2 0.5 1.0 1.25 1.5 1.75 2.0

GHz

Typical Performance at 25

Vd

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-27