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Product Description
g
g
Stanford Microdevices’ SNA-200 is a GaAs monolithic
broadband amplifier (MMIC) in die form. This amplifier
provides 16dB of gain when biased at 50mA and 4V.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in
packaged form (SNA-276, -286 & -287), its small size
(0.33mm x 0.33mm) and gold metallization make it an ideal
choice for use in hybrid circuits.
The SNA-200 is available in gel paks at 100 devices per
container.
Output Power vs. Frequency
16
15
14
dBm
13
12
0.5 1 1.5 2 4 6 8 10
GHz
SNA-200
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
• Cascadable 50 Ohm Gain Block
• 16dB Gain, +14dBm P1dB
• 1.5:1 Input and Output VSWR
• Operates From Single Supply
• Chip Back Is Ground
Applications
• Narrow and Broadband Linear Amplifiers
• Commercial and Industrial Applications
50 Ohm Gain Blocks
Electrical Specifications at T a = 25
Symbol
G
G
BW 3dB 3dB Bandwidth GH z 6.5
P
1dB
NF Noise Fi
VSW R Input/Output f = 0.1-6.5 G Hz
IP
T
ISOL Reverse Isolation f = 0.1-6.5 G Hz dB 20
V
dG/dT Device G
dV/dT Device Volta
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
P aram ete rs: Test C on ditions :
Id = 50mA , Z0 = 50 Ohm s
S m a ll S ign al P o w e r G a in
P
Gain Flatness f = 0.1-4.0 G Hz dB +/1.0
F
Output P ower at 1dB Com pression f = 2.0 GHz dBm 14.0
ure f = 2.0 GHz dB 5.5 6.0
Third Order Intercept Point f = 2.0 GHz dBm 27.0
3
Group Delay f = 2.0 GHz psec 100
D
Device Voltage V 3 .5 4 .0 4 .5
D
Coefficient
Temperature Coefficient
ain
e Temperature
°°
° C
°°
f = 0.1-2.0 GHz
f = 2.0-4.0 G Hz
f = 4.0-6.5 G Hz
5-21
Units Min. Typ . Max.
dB
dB
dB
-
/d egC
dB
mV/degC-4.0
15.0
14.0
13.0
16.0
15.0
14.0
1.5:1
-0.0018
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SNA-200 DC-6.5 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°°
°
C (Vds =4.0V , Ids = 50mA)
°°
0
-5
-10
dB
-15
-20
0.5 1 1.5 2 4 6 8 10
|S12| vs. Frequency
|S11| vs. Frequency
0
-5
-10
dB
-15
-20
-25
0.5 1 1.5 2 4 6 8 10
50 Ohm Gain Blocks
Noise Figure vs. Frequency
8
7.5
7
6.5
dB
6
5.5
5
0.10.511.5246810
GHz
GHz
GHz
14
13
12
dB
11
10
|S21| vs. Frequency
0.5 1 1.5 2 4 6 8 10
GHz
|S22| vs. Frequency
0
-5
-10
dB
-15
-20
0.5 1 1.5 2 4 6 8 10
TOIP vs. Frequency
0.5 1 1.5 2 4 6 8 10
dBm
28
27
26
25
24
GHz
GHz
Suggested Bonding Arrangement
Simplified Schematic of MMIC
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
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SNA-200 DC-6.5 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
Parameter
Device Current 70mA
Power Dissipation 320mW
RF Input Power 100mW
Junction Temperature +200C
Operating Temperature -45C to +85C
Storage Temperature -65C to +150C
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
Absolute
Maximum
MTTF vs. Temperature @ Id = 50mA
Die Bottom
Temperature
+55C +155C 1000000
+90C +190C 100000
+120C +220C 10000
Thermal Resistance (Lead-Junction): 500° C/W
Junction
Temperature
MTTF (hrs)
Die Attach
The die attach process mechanically attaches the die to
the circuit substrate. In addition, it electrically connects
the ground to the trace on which the die is mounted and
establishes the thermal path by which heat can leave the
die.
Assembly Techniques
Epoxy die attach is recommended. The top and bottom
metallization is gold. Conductive silver-filled epoxies are
recommended. This method involves the use of epoxy to
form a joint between the backside gold of the chip and
the metallized area of the substrate. A 150 C cure for 1
hour is necessary. Recommended epoxy is Ablebond
84-1LMIT1 from Ablestik.
Part Number Ordering Information
Part Number Devices Per Pak
SNA-200 100
50 Ohm Gain Blocks
Typical Biasing Configuration
Wire Bonding
Electrical connections to the die are through wire
bonds. Stanford Microdevices recommends wedge
bonding or ball bonding to the pads of these devices.
Recommended Wedge Bonding Procedure
1. Set the heater block temperature to 260C +/- 10C.
2. Use pre-stressed (annealed) gold wire between
0.0005 to 0.001 inches in diameter.
3. Tip bonding pressure should be between 15 and
20 grams and should not exceed 20 grams. The
footprint that the wedge leaves on the gold wire
should be between 1.5 and 2.5 wire diameters
across for a good bond.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5-23
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