Datasheet SNA-186-TR1, SNA-186-TR2, SNA-186-TR3 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SNA-186 is a GaAs monolithic broad­band amplifier (MMIC) housed in a low-cost surface-mount­able plastic package. This amplifier provides 12dB of gain
and +13dBm of P1dB power when biased at 4V and 50mA.

The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.

Also available in chip form (SNA-100), its small size (0.33mm
x 0.33mm) and gold metallization makes it an ideal choice for
use in hybrid circuits.

SNA-186

DC-8 GHz, Cascadable
GaAs HBT MMIC Amplifier

The SNA-186 is available in tape and reel at 1000, 3000 and
5000 devices per reel.

Product Features

• Patented, Reliable GaAs HBT T echnology

• Cascadable 50 Ohm Gain Block

• 12dB Gain, +13dBm P1dB

Output Power vs. Frequency

15

14

13

dBm

12

11

10

0.10.511.52468

GHz

Electrical Specifications at Ta = 25C

Symbol

G

G

BW 3dB 3dB B andwidth GHz 8.0

P

NF Noise Figure

VS WR Input / Output f = 0.1-8.0 GH z 1.8:1

IP

T

ISO L Reverse Isolation f = 0.1-8.0 G Hz dB 16

VD D evice Voltage V 3 .5 4 .0 4 .5
dG/dT Device
dV/dT Device Voltage Tem perature C oefficient m V/degC -4.0

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Parameters: Test Conditions:
Id = 50mA, Z

Sm all Signal Gain

P

G ain Flatness f = 0.1-8.0 G Hz dB +/-1.0

F

O utput Pow er at 1dB Com pression

1dB

Third Order Intercept P oint

3

G roup D elay f = 2.0 GH z psec 100

D

= 50 O hm s

0

Gain

Tem perature C oefficient

• 1.5:1 Input and Output VSWR

• Operates From a Single DC Supply

• Low Cost Surface Mount Plastic Package

Applications

• Narrow and Broadband Linear Amplifiers

• Commercial Communication Applications

Units Min. Typ . M ax.

f = 0.1-2.0 G Hz
f = 2.0-6.0 G Hz
f = 6.0-8.0 G Hz

f = 0.1-6.0 G Hz
f = 6.0-8.0 G Hz

f = 0.1-6.0 G Hz
f = 6.0-8.0 G Hz

f = 0.1-6.0 G Hz
f = 6.0-8.0 G Hz

5-13

dB
dB
dB

dBm

dB

dBm

dB

/degC -0.0015

10.0

9.0

8.0

12.0
11 .0

10.0

13.0
11 .0

6.0

7.0

26
24

50 Ohm Gain Blocks

SNA-186 DC-8 GHz Cascadable MMIC Amplifier

Typical Performance at 25

°°

°

C (Vds = 4.0V , Ids = 50mA)

°°

0

-5

-10

dB

-15

-20

-25

0.1 0.5 1 1.5 2 4 6 8

|S12| vs. Frequency

|S11| vs. Frequency |S21| vs. Frequency

0

-5

-10

dB

-15

-20

0.1 0.5 1 1.5 2 4 6 8

50 Ohm Gain Blocks

Noise Figure vs. Frequency

8

7

dB

6

5

0.1 0.5 1 1.5 2 4 6 8

GHz

GHz

GHz

13

12

11

dB

10

9

0.1 0.5 1 1.5 2 4 6 8

GHz

|S22| vs. Frequency

0

-5

-10

dB

-15

-20

0.1 0.5 1 1.5 2 4 6 8

GHz

TOIP vs. Frequency

28

27

26

dBm

25

24

0.1 0.5 1 1.5 2 4 6 8

GHz

Typical S-Parameters Vds = 4.0V, Id = 50mA

Freq GHz |S11| S11 Ang |S2 1| S21 Ang |S 1 2| S12 Ang |S22| S22 An g

.100 0.223 -172 4.125 177 0.154 -9 0.286 131
.500 0.271 117 3.887 139 0.147 -29 0.223 114

1.00 0.309 55 3.722 98 0.145 -59 0.267 54

1.50 0.340 3 3.615 62 0.144 -87 0.300 4

2.00 0.350 -48 3.560 24 0.144 -112 0.310 -45

4.00 0.287 97 3.061 -128 0.145 127 0.345 82

6.00 0.363 92 2.147 88 0.114 6 0.419 -82

8.00 0.166 83 2.606 -53 0.129 -117 0.225 -57

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

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SNA-186 DC-8 GHz Cascadable MMIC Amplifier

y

Absolute Maximum Ratings

Parameter

Device Current 75mA

Power Dissipation 330mW

RF Input Power 100mW

Junction Temperature +200C

Operating Temperature -45C to +85C

Storage Temperature -65C to +150C

Absolute

Maximum

Notes:

1. Operation of this device above any one of these
parameters may cause permanent damage.

MTTF vs. Temperature @ Id = 50mA

Lead

Temperature

+50C +155C 1000000

+85C +190C 100000

+115C +2 20C 10000

Thermal Resistance (Lead-Junction): 531° C/W

Junction

Temperature

MTTF (hrs)

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

SNA-186-TR1 1000 7"

SNA-186-TR2 3000 13"

SNA-186-TR3 5000 13"

Recomm ended Bias Resistor Values

Suppl

Voltage(Vs)

Rbias (Ohms) 20 70 100 160 220 320

5V 7.5V 9V 12V 15V 20V

Typical Biasing Configuration

50 Ohm Gain Blocks

Pin Designation

1RF in
2GND

RF out and

3

Bias

4GND

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-15