Datasheet SNA-176 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SNA-176 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface
mountable stripline package. This amplifier provides 12dB of
gain when biased at 50mA and 4V.

External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.

These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in
chip form (SNA-100), its small size (0.33mm x 0.33mm) and
gold metallization makes it an ideal choice for use in hybrid
circuits

The SNA-176 is available in tape and reel at 1000, 3000 and
5000 devices per reel.

Output Power vs. Frequency

15

14

13

dBm

12

11

10

0.5 1 1.5 2 4 6 8 10

GHz

SNA-176

DC-10 GHz, Cascadable
GaAs MMIC Amplifier

Product Features

• Cascadable 50 Ohm Gain Block

• 12dB Gain, +13dBm P1dB

• 1.5:1 Input and Output VSWR

• Operates From Single Supply

• Low Cost Stripline Mount Ceramic Package

• Hermetically Sealed

Applications

• Narrow and Broadband Linear Amplifiers

• Commercial and Industrial Applications

50 Ohm Gain Blocks

Electrical Specifications at Ta = 25C

Symbol

G

G

BW 3dB 3dB B andwidth G Hz 10.0

P

NF Noise Figure f = 2.0 GH z dB 6.0

VS WR Input / O utput f = 0.1-10 G Hz

IP
T

IS OL R everse Isolation f = 0.1-10 G Hz dB 16

VD D evice Vo ltage V 3 .5 4 .0 4 .5
dG/dT
dV/dT Device Voltage Tem perature C oefficient m V/degC -4.0

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Parameters: Test Conditions:
Id = 50m A, Z

Sm all Signal Pow er G ain

P

G ain Flatness f = 0.1-8.0 GHz dB +/- 0.5

F

O utput Power at 1dB C ompression: f = 2.0 GH z dBm 13.0

1dB

Third Order Intercept Point f = 2.0 GH z dBm 26

3

G roup Delay f = 2.0 GH z psec 100

D

D evice

= 50 O hm s

0

Tem perature C oefficient

Gain

f = 0.1-2.0 GHz
f = 2.0-6.0 GHz
f = 6.0-10 G Hz

Units Min. Typ . M ax.

dB
dB
dB

-

/degC

dB

11 .0

10.0

9.0

12.0
11 .0

10.0

1.5:1

-0.0015

5-9

SNA-176 DC-10 GHz Cascadable MMIC Amplifier

Typical Performance at 25

0

-5

-10

dB

-15

-20

0

-5

-10

dB

-15

-20

|S11| vs. Frequency

0.511.52 4 6 810

|S12| vs. Frequency

0.5 1 1.5 2 4 6 8 10

50 Ohm Gain Blocks

Noise Figure vs. Frequency

8

7

dB

6

5

0.511.5246810

°°

°

C (Vds =4.0V , Ids = 50mA)

°°

GHz

GHz

GHz

|S21| vs. Frequency

14

13

12

dB

11

10

0.5 1 1.5 2 4 6 8 10

GHz

|S22| vs. Frequency

0

-5

-10

dB

-15

-20

0.5 1 1.5 2 4 6 8 10

GHz

TOIP vs. Frequency

28

27

26

dBm

25

24

0.5 1 1.5 2 4 6 8 10

GHz

Typical S-Parameters Vds = 4.0V, Ids = 50mA

Freq GHz |S11| S11 Ang |S 21| S21 Ang |S12| S12 A ng |S22| S 22 Ang

.100 0.224 117 4.491 166 0.162 -11 0.163 124
.250 0.265 92 4.311 12 0.155 -1 0.193 -191
.500 0.292 79 4.142 -175 0.151 12 0.225 92

1.00 0.251 78 4.083 -160 0.152 38 0.193 75

1.50 0.274 67 4.015 -149 0.153 58 0.234 63

2.00

4.00 0.264 76 3.553 -90 0.143 150 0.365 -79

6.00 0.293 31 4.103 -32 0.169 -136 0.495 -45

8.00 0.203 14 3.485 98 0.144 -63 0.297 -66

10.00 0.180 20 4.345 159 0.112 19 0.256 -23

0.260 55 4.103 -137 0.152 77 0.234 51

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-10

SNA-176 DC-10 GHz Cascadable MMIC Amplifier

y

Absolute Maximum Ratings

Parameter

Device Current 70mA

Power Dissipation 320mW

RF Input Power 100mW

Junction Temperature +200C

Operating Temperature -45C to +85C

Storage Temperature -65C to +150C

Absolute

Maximum

Notes:

1. Operation of this device above any one of
these parameters may cause permanent
damage.

MTTF vs. Temperature @ Id = 50mA

Lead Temperature

+45C +155C 1000000

+80C +190C 100000

+110C +220C 10000

Thermal Resistance (Lead-Junction): 556° C/W

Junction

Temperature

MTTF (hrs)

Part Number Ordering Information

Part Number Devices Per Reel Reel Size

SNA-176-TR1 1000 7"

SNA-176-TR2 3000 13"

SNA-176-TR3 5000 13"

Recomm ended Bias Resistor Values

Suppl

Voltage(Vs)

Rbias (Ohms) 20 70 100 160 220 320

5V 7.5V 9V 12V 15V 20V

Typical Biasing Configuration

Pin Designation

1RF in
2GND

RF out and

3

Bias

4GND

50 Ohm Gain Blocks

Typical Performance at 25

°°

°

C

°°

Device Voltage vs. IdPower Gain vs. Id

13
12
11

dB

10

9

60mA
50mA

40mA
30mA

25mA

8

0.5 1 1.5 2 4 6 8 10

GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5-1 1

5

4.5

4

Vd

3.5

3

25 30 40 50 60 70 80

mA