Datasheet SN74ALS236N Datasheet (Texas Instruments)

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SN74ALS236
64 × 4
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
D
D
Organized as 64 Words by 4 Bits
D
Data Rates up to 30 MHz
D
3-State Outputs
D
Package Options Include Plastic Small-Outline Package (DW), Plastic J-Leaded Chip Carriers (FN), and Standard Plastic 300-mil DIPs (N)
description
DW OR N PACKAGE
(TOP VIEW)
1
NC
IR
SI D0 D1 D2 D3
GND
16
2
15
3
14
4
13
5
12
6
11
7
10
8
V
CC
SO OR Q0 Q1 Q2 Q3 RST
9
The SN74ALS236 is a 256-bit memory utilizing advanced low-power Schottky IMPACT technology. It features high speed with fast
FN PACKAGE
(TOP VIEW)
fall-through times and is organized as 64 words by 4 bits.
A first-in, first-out (FIFO) memory is a storage device that allows data to be written into and read from its array at independent data rates. The SN74ALS236 is designed to process data at rates up to 30 MHz in a bit-parallel format, word by word.
SI
D0
NC
D1 D2
IR
3 2 1 20 19
4 5 6 7 8
910111213
NC
NC
V
CC
SO
18 17 16 15 14
OR Q0 NC Q1 Q2
Data is written into memory on the rising edge of the shift-in (SI) input. When SI goes low, the first data word ripples through to the output (see Figure 1). As the FIFO fills up, the data words
NC – No internal connection
D3
GND
NC
RST
Q3
stack up in the order they were written. When the FIFO is full, additional shift-in pulses have no effect. Data is shifted out of memory on the falling edge of the shift-out (SO) input (see Figure 2). When the FIFO is empty , additional SO pulses have no ef fect. The last data word remains at the outputs until a new word falls through or reset (RST
) goes low.
Status of the SN74ALS236 FIFO memory is monitored by the output-ready (OR) and input-ready (IR) flags. When OR is high, valid data is available at the outputs. OR is low when SO is high and stays low when the FIFO is empty . IR is high when the inputs are ready to receive more data. IR is low when SI is high and stays low when the FIFO is full.
When the FIFO is empty, input data is shifted to the output automatically when SI goes low. If SO is held high during this time, the OR flag pulses high, indicating valid data at the outputs (see Figure 3).
When the FIFO is full, data is shifted in automatically by holding SI high and taking SO low. One propagation delay after SO goes low, IR goes high. If SI is still high when IR goes high, data at the inputs is automatically shifted in. Since IR is normally low when the FIFO is full and SI is high, only a high-level pulse is seen on the IR output (see Figure 4).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
IMPACT is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 1998, Texas Instruments Incorporated
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SN74ALS236 64 × 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
description (continued)
The FIFO must be reset after power up with a low-level pulse on the master reset (RST) input. This sets IR high and OR low, signifying that the FIFO is empty. Resetting the FIFO sets the outputs to a low logic level (see Figure 1). If SI is high when RST SI goes low. If SI goes low before RST are noninverting with respect to the data inputs.
The SN74ALS236 is characterized for operation from 0°C to 70°C.
goes high, the input data is shifted in and IR goes low and remains low until
goes high, the input data is not shifted in and IR goes high. Data outputs
logic symbol
This symbol is in accordance with ANSI/IEEE Standard 91-1984 and IEC Publication 617-12.
Pin numbers shown are for the DW and N packages.
FIFO 64 × 4
3
SI
15
SO
9
RST
4
D0 Q0
5
D1
6
D2
7
D3
5 + /C1
G2
4 –
G3
CT = 0
R
1D
CTR
(CT > 0) G4
(CT < 64) G5
CT > 0
3
CT < 64
2
functional block diagram
14
13 12 11 10
OR
2
IR
Q1 Q2 Q3
4
D0
5
D1
6
D2
7
D3
2
IR
3
SI
RST
Pin numbers shown are for the DW and N packages.
2
9
FIFO
Input
Stage
Input-
Control
Logic
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62 × 4 Bit
Register
Register-
Control
Logic
FIFO
Output
Stage
Output­Control
Logic
13 12
11 10
15
14
Q0 Q1 Q2 Q3
SO
OR
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logic diagram (positive logic)
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D0
Data Inputs
D1 D2 D3
RST
SI
Word 64 Word 63 Word 3 Word 2
Words 4 – 62
Same as 3 or 63
Word 1
Q0
Q1 Q2 Q3
SO OR IR
Data Outputs
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
SN74ALS236
64 × 4
3
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SN74ALS236 64 × 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
timing diagram
RST
SI
W1
D3–D0
SO
Q3–Q0
IR
OR
Clear
Shift In
The last data word shifted out of the FIFO remains at the output until a new word falls through or an RST pulse clears the FIFO.
While the output data is considered valid only when the OR flag is high, the stored data remains at the outputs. Any additional words written into the FIFO stack up behind the first word and do not appear at the output until SO is taken low.
W2 W1 W2 W63 W64 W1
Word 1
W1
Don’t Care
Word 2 Invalid
Shift Out
W2
Empty
Word 1
Word 2 Word 3
Full
4
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SN74ALS236
64 × 4
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
RST
t
su
SI
t
h
D3–D0
t
su
Full
IR
OR
Q3–Q0
NOTE A: SO is low.
SO
OR
IR
t
PLH
t
PHL
Empty
t
pd
Figure 1. Master Reset and Data-In Waveforms
t
PLH
Full
t
t
t
PHL
PLH
pd
t
PHL
t
PLH
t
PLH
Q3–Q0
NOTE A: SI is low.
t
d(SOL-QX)
t
pd
Figure 2. Data-Out Waveforms
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SN74ALS236 64 × 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
D3–D0
t
su
SI
t
h
SO
OR
Q3–Q0
SO
D3–D0
t
PLH
Empty
Invalid
t
w
t
d(QV-ORH)
Figure 3. Data Fall-Through Waveforms
SI
IR
Full Full
t
PLH
t
w
Figure 4. Automatic Data-In Waveforms
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V Input voltage range, V Package thermal impedance, θ
Storage temperature range, T
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to GND.
2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace length of zero.
(see Note 1) –0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CC
–0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
(see Note 2): DW package 105°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JA
FN package 83°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
N package 78°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
6
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IOHHigh-level output current
mA
IOLLow-level output current
mA
Any Q
V
4.5 V
Any Q
V
V
V
V
IR, OR
V
V
ICCV
V
mA
twPulse duration
ns
SN74ALS236
64 × 4
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
recommended operating conditions
MIN NOM MAX UNIT
V
CC
V
IH
V
IL
T
A
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
V
IK
V
OH
OL
I
I
I
IH
I
IL
I
O
All typical values are at VCC = 5 V, TA = 25°C.
The output conditions have been chosen to produce a current that closely approximates one-half of the true short-circuit output current, IOS.
Supply voltage 4.5 5 5.5 V High-level input voltage 2 V Low-level input voltage 0.8 V
p
p
Operating free-air temperature 0 70 °C
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
VCC = 4.5 V, II = –18 mA –1.2 V
=
CC
IR, OR VCC = 4.5 V, IOH = –0.4 mA 2.7 3.4
= 4.5
CC
= 4.5
CC
VCC = 5.5 V, VI = 7 V 0.1 mA VCC = 5.5 V, VI = 2.7 V 20 µA VCC = 5.5 V, VI = 0.4 V –0.1 mA
VCC = 5.5 V, VO = 2.25 V –30 –112 mA
= 5.5
CC
Q outputs – 2.6 IR and OR – 0.4 Q outputs 24 IR and OR 8
IOH = –1 mA IOH = –2.6 mA 2.4 3.2
IOL = 12 mA 0.25 0.4 IOL = 24 mA 0.35 0.5 IOL = 4 mA 0.25 0.4 IOL = 8 mA 0.35 0.5
Low 100 145 High 97 142
V
timing requirements over recommended operating conditions (unless otherwise noted) (see Figure 5)
f
clock
t
su
t
h
MIN MAX UNIT
Clock frequency SI or SO 30 MHz
SI or SO High or low 15 RST Low 15 Data 0
Setup time before SI
Hold time, data after SI 17 ns
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RST
High (inactive)
15
ns
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SN74ALS236
PARAMETER
MIN
TYP†MAX
MIN
MAX
UNIT
f
MH
IR
ns
OR
ns
RST
ns
64 × 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
switching characteristics (see Figure 5)
FROM TO
(INPUT) (OUTPUT)
max
tw
§
tw t
d(QV-ORH)
t
d(SOL-QX)
t
pd
t
PHL
t
PLH
t
PLH
t
pd
t
PHL
t
PLH
t
PLH
t
PHL
t
PLH
t
PHL
All typical values are at VCC = 5 V, TA = 25°C.
The IR output pulse occurs when the FIFO is full, SI is high, and SO is pulsed (see Figure 4).
§
The OR output pulse occurs when the FIFO is empty, SO is high, and SI is pulsed (see Figure 3).
Data throughput or fall-through times
SI Q 600 800 350 1000 ns SI SI
SI OR 600 800 350 1000 ns SO Q 13 17 4 22 ns SO SO SO IR 600 800 350 1000 ns
RST
SI 35 30
SO 35 30
IR high 15 8 ns
OR high 19 8 ns
Q valid before OR 6 9 –5 12 ns
Q valid after SO 13 4 ns
OR 22 26 10 34
IR 17 21 6 27
Q 14 14 17 5 19 ns
z
20 26 8 30 16 21 6 25
23 27 7 33 20 24 6 30
8
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SN74ALS236
64 × 4
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
7 V
S1
From Output
Under Test
CL = 50 pF
(see Note A)
LOAD CIRCUIT FOR 3-STATE OUTPUTS
Timing
Input
t
su
Data
Input
Input
(see Note C)
t
PLH
In-Phase
Output
t
PHL
Out-of-Phase
Output
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control. C. All input pulses are supplied by generators having the following characteristics: PRR 1 MHz, Zo = 50 , tr 2 ns, tf≤ 2 ns. D. The outputs are measured one at a time with one transition per measurement.
1.3 V
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
1.3 V
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
Open
R1 = 500
Test Point
R2 = 500
1.3 V
t
h
1.3 V
1.3 V
t
1.3 V1.3 V
t
1.3 V 1.3 V
3.5 V
0.3 V
3.5 V
0.3 V
PHL
PLH
3.5 V
0.3 V
V
OH
V
OL
V
OH
V
OL
High-Level
Pulse
Low-Level
Pulse
Output
Control
Waveform 1
S1 Closed
(see Note B)
Waveform 2
S1 Open
(see Note B)
ENABLE AND DISABLE TIMES, 3-STATE OUTPUTS
PARAMETER S1 t
en
t
dis
t
pd
1.3 V
VOLTAGE WAVEFORMS
PULSE DURATION
1.3 V
t
PZL
1.3 V
t
PZH
VOLTAGE WAVEFORMS
t
PZH
t
PZL
t
PHZ
t
PLZ
t
PLH
t
PHL
1.3 V
t
PHZ
1.3 V
Open
Closed
Open
Closed
Open Open
3.5 V
1.3 V
0.3 V
t
w
3.5 V
1.3 V
1.3 V
t
PLZ
V
0.3 V
0.3 V
3.5 V
0.3 V
3.5 V
OL
0.3 V
V
OH
0 V
Figure 5. Load Circuit and Voltage Waveforms
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SN74ALS236 64 × 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY
SDAS107C – OCTOBER 1986 – REVISED APRIL 1998
APPLICATION INFORMATION
IR SI D0 D1 D2 D3
IR
SI
IR SI D0 D1 D2 D3
IR SI D0 D1 D2 D3
SO OR
Q0 Q1 Q2 Q3
RST
SO OR
Q0 Q1 Q2 Q3
RST
SO OR
Q0 Q1 Q2 Q3
IR SI D0 D1 D2 D3
IR SI D0 D1 D2 D3
IR SI D0 D1 D2 D3
RST
RST
SO OR
Q0 Q1 Q2 Q3
SO OR
Q0 Q1 Q2 Q3
SO OR
Q0 Q1 Q2 Q3
IR SI D0 D1 D2 D3
IR SI D0 D1 D2 D3
IR SI D0 D1 D2 D3
SO OR
Q0 Q1 Q2 Q3
RST
SO OR
Q0 Q1 Q2 Q3
RST
SO OR
Q0 Q1 Q2 Q3
SO
OR
RST
RST
RST
Figure 6. Word-Width Expansion: 192 × 12 Bits
RST
10
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