Datasheet SMTPA68, SMTPA100, SMTPA120, SMTPA130, SMTPA180 Datasheet (SGS Thomson Microelectronics)

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Page 1
FEATURES
BIDIRECTIONALCROWBAR PROTECTION. BREAKDOWNVOLTAGERANGE:
From62 V To 270 V. HOLDINGCURRENT = 150 mA min REPETITIVEPEAKPULSE CURRENT:
=50 A, 10/1000µs.
I
PP
DESCRIPTION
TheSMTPAxxseries hasbeen designedto protect telecommunication equipment against lightning andtransientinducedby AC powerlines.
SMTPA SERIES
TRISIL
SMB
(JEDECDO-214AA)
SCHEMATIC DIAGRAM
COMPLIESWITH THE
FOLLOWINGSTANDARDS:
(CCITT)ITU-K20 1000 10/700 5/310 25 ­(CCITT)ITU-K17 VDE0433 VDE0878 2000 1.2/50 1/20 50 ­IEC-1000-4-5 level3
FCC Part 68, lightningsurge type A
FCC Part 68, lightningsurge type B
BELLCORETR-NWT-001089 Firstlevel
BELLCORETR-NWT-001089 Secondlevel
CNETl31-24 1000 0.5/700 0.8/310 25 -
October 1998- Ed: 7A
PeakSurge
Voltage
(V)
1500 10/700 5/310 38 ­2000 10/700 5/310 50 -
level4
1500
800
1000 9/720 5/320 25 -
2500 1000
5000 2/10 2/10 150 11.5
Voltage
Waveform
(µs)
10/700
1.2/50
10/160 10/560
2/10
10/1000
Current
Waveform
(µs)
5/310
8/20
10/160 10/560
2/10
10/1000
Admissible
Ipp (A)
50
100
75 55
150
50
Necessary
Resistor
(Ω)
-
-
12.5
6.5
11.5 10
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Page 2
SMTPAxxx
ABSOLUTE MAXIMUMRATINGS (T
Symbol Parameter Value Unit
P
I
PP
I
TSM
Powerdissipation Peakpulse current 10/1000µs
Nonrepetitivesurgepeak on-state current
dV/dt Criticalrateof rise of off-statevoltage V
T
stg
T
T
Storagetemperaturerange Maximumjunction temperature
j
Maximumlead temperatureforsoldering during 10 s.
L
THERMAL RESISTANCES
Symbol Parameter Value Unit
Junctionto leads.
(j-l)
R
th
(j-a)
R
th
Junctionto ambienton printedcircuit withstandardfootprintdimensions.
amb
25°C)
=
T
=50 °C5 W
lead
50
8/20 µs
100
tp= 20ms 30 A
RM
5KV/
- 55to + 150 150
260 °C
20
100 °C/W
A
s
µ
C
°
C
°
C/W
°
ELECTRICALCHARACTERISTICS(T
amb
Symbol Parameter
V
RM
I
RM
V
V
BR
V
BO
I
H
I
BO
I
PP
C
Type Marking I
Stand-offvoltage Leakagecurrentat stand-offvoltage ContinuousReversevoltage
R
Breakdownvoltage Breakovervoltage Holdingcurrent Breakovercurrent Peak pulse current Capacitance
@V
RM
RM
max. max.
Laser
SMTPA62 SMTPA68 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA240 SMTPA270
Allparameters tested at 25°C, except whereindicated.
Note 1: IRmeasured at VRguaranteeV Note 2: Measured at 50Hz(1 cycle) - See testcircuit 1.
U01 U05 U13 U17 U19 U25 U27 U31 U35 U39
AV
µ
2 2 2 2 2 2 2 2 2 2
BRmin
56 61
90 108 117 162 180 198 216 243
V
R
=25°C)
note 1
IR@V
AV VmAmApF
µ
50 50 50 50 50 50 50 50 50 50
R
62
68 100 120 130 180 200 220 240 270
Note 3: See testcircuit 2. Note 4: VR= 1V,F = 1MHz. Refer to fig.3 for C versus VR.
VBO@I
max.
note2
82
90 133 160 173 240 267 293 320 360
BO
I
H
max. min.
note3
800 800 800 800 800 800 800 800 800 800
150 150 150 150 150 150 150 150 150 150
C
max.
note4
150 150 100 100 100 100 100 100 100 100
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Page 3
TESTCIRCUIT 1 FORIBOandVBOparameters:
Auto
Transformer
220V/2A
static relay.
V
out
220V
Transformer
220V/800V
5A
TESTPROCEDURE:
PulseTest duration (tp = 20ms):
- For Bidirectional devices = SwitchK is closed
- For Unidirectionaldevices = Switch K is open. V
Selection
OUT
- Device with V
-V
- Devicewith V
-V
OUT
BO
OUT
BO
200 Volt
<
=250 V
≥ 200Volt
= 480 V
RMS,R1
RMS,R2
= 140Ω.
= 240Ω.
= 20ms
tp
K
I
BO
measu re
R1
140
R2
240
D.U.T
V
BO
measure
SMTPA xxx
TESTCIRCUIT 2 forI
V
= - 48 V
BAT
Thisis a GO-NOGOTestwhich allowsto confirm the holdingcurrent (I testcircuit.
TESTPROCEDURE :
1) Adjustthe currentlevel at theI
2) Firethe D.U.T with a surgeCurrent: Ipp = 10A , 10/1000 µs.
3) TheD.U.T will come backoff-state within 50ms max.
parameter.
H
R
D.U.T .
Surge generator
) levelin a functional
H
valueby short circuitingthe AK of the D.U.T.
H
-V
P
3/5
Page 4
SMTPAxxx
Fig.1: Non repetitivesurge peak on-statecurrent
versus overload duration(Tj initial=25°C).
(A)
TSM
Fig. 3: Relative variation of junction capacitance
versus reverse applied voltage (typical values).
Note: For VRMupper than 56V, the curve is ex- trapolated(dotted line).
Fig. 2: Relativevariation of holdingcurrent versus junctiontemperature.
Fig. 4: On-state current versus on-state voltage (typicalvalues).
I (A)T
V (V)R
Fig. 5: Transient thermal impedance junction to
ambient versus pulse duration (for FR4 PC Board withT
4/5
= 10 mm).
lead
tp(s)
V (V)T
Page 5
SURFACE MOUNT
SMTPA xxx
SM TPA 100
TRISIL PROTECTION 50 A
MARKING : Logo,date code, type code. PACKAGEMECHANICAL DATA.
SMB (JEDEC DO-214AA)
E1
D
E
A1
C
L
A2
FOOTPRINTDIMENSION(in millimeters) SMB
VOLTAGE
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
b
L 0.75 1.60 0.030 0.063
Packaging:
Standardpackagingis in tape and reel Weight: 0.12g
2.3
1.52 2.75
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1.52
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