Datasheet SMTHBT200 Datasheet (SGS Thomson Microelectronics)



SMTHBT200

TRISIL

FEATURES

BIDIRECTIONALCROWBARPROTECTION
REPETITIVEPEAK PULSECURRENT:

= 100 A (10/1000µs)

I

PP

HOLDINGCURRENT: I
BREAKDOWNVOLTAGE: 200V min
BREAKOVERVOLTAGE: 265Vmax

DESCRIPTION

This protection device h as been especially
designed to protect subscriber line cards using
SLICS without int egrated ring generators.
The SMTHBT200 device protects ring
generat or relays against transient

= 150 mA

H

TM

FOR LINE CARD PROTECTION

SMC

SCHEMATIC DIAGRAM

INACCORDANCEWITHTHEFOLLOWINGSTANDARDS :

- CCITTK20: 10/700µs4kV
5/310µs 100 A

- VDE 0433: 10/700µs4kV
5/310µs 100 A

- VDE 0878: 1.2/50µs4kV

1/20µs 100A

- FCC Part68: 2/10µs 2.5 kV

BELLCORETR-NWT-001089: 2/10µs 500A

- BELLCORETR-NWT-000974:10/1000µs1kV

10/1000µs 100A

August 1999-Ed : 3A

1/6

SMTHBT200

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

R

th(j-I)

th(j-a)

Junctionto leads 10 °C/W
Junctionto ambienton printedcircuit

75 °C/W

(withstandardfootprint dimensions)

ABSOLUTE MAXIMUMRATINGS

(T

=

25°C,unless otherwisespecified)

amb

Symbol Parameter Value Unit

I

pp

I

TSM

dV/dt

T

T

stg

Tj

Note 1:

L

Peakpulse current:
10/1000µs (open circuitvoltagewaveform 10/1000µs)
8/20µs (opencircuitvoltage waveform4kV 1.2/50µs)

Nonrepetitivesurge peak on-statecurrent
Critical rateof riseof off-statevoltage

tp = 20ms

V

RM

100
250

55 A

Maximumlead temperaturefor solderingduring 10s 260 °C
Storagetemperaturerange

Maximumjunction temperature

Pulsewaveform

%I

PP

- 55to +150
150

5 KV/µs

A
A

°C
°C

µ

10 / 1000µstr=10µs tp = 1000

s
8/20µstr=8µstp=20µs
5 / 310µstr=5µs tp = 310µs
1/20µstr=1µstp=20µs
2/10µstr=2

µ

stp=10

µ

s

100

50

0

t

rp

t

2/6

SMTHBT200

ELECTRICALCHARACTERISTICS(T

amb

=25°C)

Symbol Parameter

V

RM

I

RM

V

R

V

BR

V

BO

I

H

I

BO

I

PP

C

Stand-offvoltage
Leakagecurrentat stand-offvoltage
ContinuousReverse voltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peak pulse current
Capacitance

STATICPARAMETERS

Type

@V

I

RM

RM

max.

AV

µ

I

@V

R

R

max.

note1

AV VmAmAmA pF

µ

V

BO

max. min.

max. note2

@I

BO

I

H

min.

note3

SMTHBT200 10 180 50 200 265 150 800 150 150

C

max.

note4

Note 2 : IRmeasured at VRguaranteesVBR>V
Note 2 : Measured at 50Hz, see testcircuit 1.
Note 3 :

See functionalholding current test circuit2.

Note 4 :

VR=1V bias, V

=1V, F=1MHz.

RMS

R

3/6

SMTHBT200

TESTCIRCUIT 1 FORI

Auto

Transformer

220V/2A

220V

TESTPROCEDURE :

PulseTest duration(tp =20ms):

-For Bidirectionaldevices= SwitchK isclosed

-For Unidirectionaldevices = SwitchK is open.
V

Selection

OUT

-Device with V

-V

OUT

- Devicewith V

-V

OUT

andVBOparameters:

BO

V

Transformer

220V/800V

5A

< 200 Volt

BO

= 250V

≥ 200 Volt

BO

=480 V

,R1= 140Ω.

RMS

RMS,R2

static
relay.

out

=240Ω.

= 20ms

tp

K

I

BO

measure

R1

140

R2

240

D.U.T

V

BO

measure

TESTCIRCUIT2 for IHparameter.

R

-V

P

V

BAT

D.U.T.

= - 48 V

Surge generator

This is a GO-NOGO testwhich allows to confirmthe holdingcurrent (IH)level in a functionaltest circuit.

TESTPROCEDURE:

- Adjust the currentlevel at the I

- Firethe D.U.T. witha surgecurrent: I

- TheD.U.T. will comeback to the off-statewithin 50 ms max.

4/6

value by short circuiting the D.U.T.

H

=10A, 10/1000µs.

pp

SMTHBT200

Fig 1 :

versusoverloadduration(T

70
60
50
40
30
20
10

Fig 3 :

Non repetitivesurge peak on-state current

initial= 25 °C).

j

I (A)TSM

F=50Hz

0

1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

Relativevariation of holdingcurrent versus

junctiontemperature.

IH[Tj] / IH[Tj=25°C]

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20 0 20 40 60 80 100 120

j

T(°C)

Fig 2 :

On-state voltage versus on-state current

(typicalvalues).

I (A)

T

50

Tj=25°C

10

1

2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0

Fig 4 :

Variation of thermal impedancejunction to

V (V)T

ambientversuspulse duration.

Zth(j-a)(°CW)

100

10

1

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

t (s)p

Fig 5 :

Relative variation of junction capacitance

versusreversevoltageapplied (typicalvalues).

Note : For VBR upper than 62 V, the curve can be extrapolated
(dottedline)

C[VR]/C[VR=1V]

1.0

F=1MHz

0.5

0.2

0.1
1 10 100 300

V (V)R

5/6

SMTHBT200

PACKAGEMECHANICAL DATA

SMC(Plastic)

E1

D

E

C

L

E2

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 2.90 3.2 0.114 0.126
c 0.15 0.41 0.006 0.016

E 7.75 8.15 0.305 0.321

E1 6.60 7.15 0.260 0.281

A1

A2

b

E2 4.40 4.70 0.173 0.185

D 5.55 6.25 0.218 0.246

L 0.75 1.60 0.030 0.063

FOOTPRINT

(in millimeters)

3.3

Packaging

MARKING

: tapeand reel

Package Type Marking

SMC SMTHBT200 WO4

2.0 4.2 2.0

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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publicationsupersedes and replacesall information previously supplied.
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 1999 STMicroelectronics - Printedin Italy - All rights reserved.

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