Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
SOT
-23
Millimeter
Millimeter
Elektronische Bauelemente
FEATURES
Low On-Resistance : 10Ω
Low Input Capacitance: 30PF
Low Out Put Capacitance : 10PF
Low Threshold : 2V
Fast Switching Speed : 2.5ns
APPLICATIONS
DC-DC Converter
Cellular & PCMCIA Card
Cordless Telephone
Power Management in Portable and Battery etc
MARKING
PD
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
P-Channel
G
1
SMS840
0.13A , 50V , R
D3
S
2
REF.
A 2.70 3.04 G - 0.18
B 2.10 2.80 H 0.40 0.60
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
F 0.30 0.50
DS(ON)
Min. Max.
10 ΩΩΩΩ
REF.
Min. Max.
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-23 3K 7 inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Drain-Source Voltage V
Continuous Gate-Source Voltage V
Continuous Drain Current @TA=25°C ID -130 mA
Pulsed Drain Current(tp≤10us)
Power Dissipation @TA=25°C PD 225 mW
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature Range TJ, T
(TA=25°C unless otherwise specified)
-50 V
DSS
±20 V
GSS
IDM -520 mA
556 °C/W
θJA
-55~150 °C
STG
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A Page 1 of 4
Page 2
SMS840
0.13A , 50V , R
Elektronische Bauelemente
P-Channel Enhancement MOSFET
DS(ON)
10 ΩΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
(TA=25°C unless otherwise specified)
Teat Conditions
Static Characteristics 1
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate-Source Leakage Current I
Gate-Source Threshold Voltage V
Static Drain-Source On Resistance R
DSS
DSS
- - ±60
GSS
GS(th)
DS(ON)
Forward Transconductance gFS 50 - - mS VDS= -25V,,ID = -0.1A, f=1.0KHz
-50 - - V V
- - -0.1
- - -15 VGS=0, V
-0.8
- -2 V V
µA
µA VGS=±20V, V
=0, ID = -250µA
GS
VGS=0, V
DS =VGS
DS
DS
, ID = -1mA
= -25V
= -50V
=0
DS
- 5 10 Ω VGS= -5V, ID = -0.1A
Dynamic Characteristics
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 30 -
iss
- 10 -
oss
- 5 -
rss
pF VDS= -5V, VGS=0, f=1MHz
Switching Characteristics 2
Turn-On Delay Time T
Turn-Off Delay Time T
Rise Time Tr - 1 Fall Time Tf - 8 -
- 25 -
d(ON)
- 16 -
d(OFF)
VDD= -15V, ,ID= -2.5A,
nS
RL=50Ω,
Gate Charge QT - 6000
Source-Drain Diode Characteristics
Continuous Current IS - - 0.13
Pulsed Current ISM - - 0.52
Forward Voltage 2 VSD - -2.5
Notes:
1. Pulse Test : PW≤300us, Duty Cycle≤2%.
2. Switching Time is Essentially Independent of Operating Temperature.
-
pC
A
- V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMS840
0.13A , 50V , R
P-Channel Enhancement MOSFET
DS(ON)
10 ΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMS840
0.13A , 50V , R
P-Channel Enhancement MOSFET
DS(ON)
10 ΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A Page 4 of 4
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