Page 1
1
2
3
GATE
SOURCE
DRAIN
*
* Gate
Pretection
Diode
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
, Steady
Millimeter
Millimeter
Min. Max.
Min. Max.
Elektronische Bauelemente
FEATURES
Low gate voltage threshold V
Low gate charge for fast switching
ESD protected gate
Minimum breakdown voltage rating of 30V
APPLICATION
Level shifters
Level switches
Low side load switches
Portable applications
DEVICE MARKING: TR8
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
to facilitate drive circuit design
GS(TH)
SMS4003K
0.5 A, 30V
N-Channel MOSFET
SOT-23
REF.
A 2.70 3.04 G - 0.18
B 2.10 2.80 H 0.40 0.60
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
F 0.30 0.50
REF.
MAXIMUM RATINGS
Drain – Source Voltage VDS 30 V
Gate – Source Voltage VGS ±20 V
State
Power Dissipation1, Steady State PD 0.69 W
Continuous Drain Current1 , t<10s
Power Dissipation1, t<5s PD 0.83 W
Pulsed Drain Current IDM 1.7 A
Maximum Junction – Ambient
Operating Junction & Storage Temperature Range TJ, T
Source Current (Body Diode) IS 1.0 A
Lead Temperature for Soldering Purposes(1/8” from
case 10s
Note:
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area=1.127 in sq【1 oz】including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size.
10-Jan-2010 Rev. A Page 1 of 4
(TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
1
TA=25°C 0.5 Continuous Drain Current
TA=85°C
TA=25°C 0.56
TA=85°C
ID
I
0.37
D
0.40
Steady State1 180
R
t<10s1 150
Steady State2
θJA
300
150, -55~150 °C
STG
TL 260 °C
A
A
°C/W
Page 2
SMS4003K
Elektronische Bauelemente
0.5 A, 30V
N-Channel MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN TYP MAX UNIT
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage3 V
Gate-Source Leakage Current I
Zero Gate Voltage Drain Current I
Drain-Source On-Resistance3 R
Forward Transconductance3 gFS - 0.33 - S VDS=3V, ID=10mA
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time4 T
Rise Time4 TR - 47.9 Turn-off Delay Time4 T
Fall Time4 TF - 64.2 Total Gate Charge QG - 1.15 Threshold Gate Charge Q
Gate-Source Charge QGS - 0.32 Gate-Drain Charge QGD - 0.23 -
Forward On Voltage
Reverse Recovery Time Trr - 14 - nS VGS=0V, IS =10mA, dls/dt=8A /µs
Note:
3. Pulse Test: Pulse width ≦300µs, duty cycle ≦2%.
4. Switching characteristics are independent of operating junction temperatures.
TJ=25°C - 0.65 0.7
TJ=125°C
(TA = 25°C unless otherwise specified)
TEST CONDITION
STATIC CARACTERISTICS
30 - - V VGS=0V, ID =100µA
(BR)DSS
0.8 - 1.6 V VDS= V
GS(TH)
- - ±1.0 µA VGS=±10V
GSS
- - 1.0 µA VDS=30V, VGS=0V, TJ=25°C
DSS
DS(ON)
- 21 -
ISS
- 19.7 -
OSS
- 8.1 -
RSS
SWITCHING CHARACTERISTICS
- 16.7 -
d(ON)
- 65.1 -
d(OFF)
- 0.15 -
G(TH)
SOURCE-DRAIN DIODE CARACTERISTICS
VSD
- 1.5 2.0 VGS=2.5V, ID=10mA
- 1.0 1.5
DYNAMIC CHARACTERISTICS
- 0.45 -
Ω
VGS=4.0V, ID=10mA
VDS=5V
pF
VGS=0V
f=1MHz
VGS=4.5V
VDD=5V
nS
I D=0.1A
RG=50Ω
VGS=5V
nC
VDS=24V
I D=0.1A
VGS=0V
V
IS =10mA
GS, ID
=250µA
10-Jan-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMS4003K
0.5 A, 30V
N-Channel MOSFET
10-Jan-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMS4003K
0.5 A, 30V
N-Channel MOSFET
10-Jan-2010 Rev. A Page 4 of 4
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