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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating(Matte Tin Finish Annealed over
Alloy 42 leadframe)
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
MARKING
SMS318
220mA, 50V, R
N-Channel Enhancement MOSFET
SOT-23
A
L
3
Top View
1
K E
F
REF.
A 2.70 3.04 G - 0.18
B 2.10 2.80 H 0.40 0.60
C 1.20 1.60 J 0.08 0.20
D 0.89 1.40 K 0.6 REF.
E 1.78 2.04 L 0.85 1.15
F 0.30 0.50
C B
2
D
G
Millimeter Millimete
Min. Max.
3.5
DS(ON)
1
2
H J
REF.
Min. Max.
3
Product Marking Code
SMS318 H03 / SS
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Rating Unit
Drain-Source Voltage V
Continuous Gate-Source Voltage V
Continuous Drain Current ID 220 mA
Power Dissipation P
Thermal Resistance, Junction to Ambient R
=25°C unless otherwise specified)
A
50 V
DSS
±20 V
GSS
350 mW
D
357 °C/W
θJA
Junction and Storage Temperature Range T
, T
150, -55~150 °C
J
STG
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Aug-2012 Rev. D Page 1 of 2
Page 2
SMS318
Elektronische Bauelemente
220mA, 50V, R
N-Channel Enhancement MOSFET
DS(ON)
3.5
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Off Characteristics 2
Drain-Source Breakdown Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
(BR)DSS
- - ±100 nA VGS=±20V, V
GSS
DSS
On Characteristics 2
Gate Threshold Voltage 1 V
Static Drain-Source On Resistance 1 R
Forward Transconductance 1 g
0.8 - 1.5 V V
GS(th)
DS(ON)
120 - - mS VDS=10V,,ID =0.22A
FS
Dynamic Characteristics 2
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 27 -
iss
- 13 -
oss
- 6 -
rss
Switching Characteristics
Turn-On Delay Time
Rise time
1,2
tr - - 18
Turn-Off Delay Time
Fall time
1,2
tr - - 14
1,2
td
1,2
td
- - 5
(ON)
- - 36
(OFF)
50 - - V V
- - 0.5 μA VGS=0, V
100 nA VGS=0, V
= 0, ID = 250μA
GS
DS
=50V
DS
=30V
DS
= VGS, ID =1mA
DS
=0
- - 3.5 VGS=10V, ID =0.22A
Ω
- - 6
pF
=4.5V, ID =0.22A
V
GS
=25V,
V
DS
V
=0,
GS
f=1MHz
=30V,
V
DD
V
=10V,
nS
DS
I
=0.29A,
D
R
GEN
=6Ω,
Drain-source body diode characteristics
Body diode forward voltage 1 V
Notes:
1. Pulse Test ; Pulse Width ≤300μs, Duty Cycle ≤2%.
2. These parameters have no way to verify.
- - 1.4
SD
VGS=0, IS =0.44A
V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-Aug-2012 Rev. D Page 2 of 2
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