• Pin-compatible with existing 512K read-only memories (ROMs)
and electrically programmable ROMs (EPROMs)
• All inputs/outputs fully TTL compatible
• Power-saving CMOS technology
• V ery high-speed SNAP! Pulse Programming
• 3-state output buffers
• 400mV minimum DC noise immunity with standard TTL loads
• Latchup immunity of 250mA on all input and output lines
• Low power dissipation (CMOS input levels)
PActive - 193mW (MAX)
PStandby - 1.7mW (MAX)
OPTIONSMARKING
• Timing
150ns access-15
200ns access-20
250ns access-25
• Package(s)
Ceramic DIP (600mils) J No. 110
• Operating Temperature Ranges
Military (-55oC to +125oC) M
For more products and information
please visit our web site at
www.austinsemiconductor.com
SMJ27512
Rev. 1.0 9/01
28-Pin DIP (J) 600-Mils
1
A15
A12
DQ0
DQ1
DQ2
GND
2
3
A7
4
A6
5
A5
6
A4
7
A3
8
A2
9
A1
10
A0
11
12
13
14
Vcc
28
A14
27
A13
26
A8
25
A9
24
A11
23
G\/V
22
PP
A10
21
E\
20
DQ7
19
18
DQ6
17
DQ5
16
DQ4
15
DQ3
Pin NameFunction
A0 - A15 Address Inputs
DA0-DQ7 Inputs (programming)/Outputs
E\Chip Enable/Power Down
GNDGround
G\ /V
V
Output Enable/13V Programming
PP
5V Power Supply
CC
GENERAL DESCRIPTION
The SMJ27C512 is a set of 65536 by 8-bit (524,288-bit),
ultraviolet (UV) light erasable, electrically programmable
read-only memories. These devices are fabricated using
power-saving CMOS technology for high speed and simple
interface with MOS and bipolar circuits. All inputs
(including program data inputs can be driven by Series 54 TTL
circuits without the use of external pullup resistors. Each
output can drive one Series 54 TTL circuit without external
resistors. The data outputs are 3-state for connecting
multiple devices to a common bus. The SMJ27C512 is
pin-compatible with existing 28-pin 512K ROMs and
EPROMs.
Because this EPROM operates from a single 5V supply (in
the read mode), it is ideal for use in microprocessor-based
systems. One other supply (13V) is needed for programming.
All programming signals are TTL level. This device is
programmable by the SNAP! Pulse programming algorithm.
The SNAP! Pulse programming algorithm uses a VPP of 13V
and a VCC of 6.5V for a nominal programming time of seven
seconds. For programming outside the system, existing
EPROM programmers can be used. Locations may be
programmed singly, in blocks, or at random.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Page 2
Austin Semiconductor, Inc.
9
FUNCTIONAL BLOCK DIAGRAM*
EPROM 65,536 x 8
10
A0
A1
8
A2
7
A3
6
A4
5
A5DQ0
4
A6DQ1
3
A7DQ2
25
A8DQ3
24
A9DQ4
E\
21
23
2
26
27
1
20
A10DQ5
A11DQ6
A12DQ7
A13
A14
A15
22
G\ /V
PP
0
A
15
[PWR DWN]
&
EN
0
65,535
A
A
A
A
A
A
A
A
UVEPROM
SMJ27C512
11
12
13
15
16
17
18
19
* This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
OPERATION
The seven modes of operation for the SMJ27C512 are listed in Table 1. The read mode requires a single 5V supply. All
inputs are TTL level except for VPP during programming (13V for SNAP! Pulse), and 12V on A9 for signature mode.
TABLE 1. OPERATION MODES
FUNCTION
(PINS)
READ
E\ (20)
G\ /VPP (22)V
V
(28)V
CC
V
IL
IL
CC
OUTPUT
DISABLE
V
IL
V
IH
V
CC
STANDBY PROGRAMMING VERIFY
V
IH
X
V
CC
A9 (24)XXXXXX
A0 (10)XXXXXX
DQ0-DQ7
(11-13, 15-19)
* X can be VIL or V
SMJ27512
Rev. 1.0 9/01
Data OutHigh-ZHigh-Z
IH
MODE*
PROGRAM
INHIBIT
V
IL
V
PP
V
CC
V
IL
V
IL
V
CC
V
IH
V
PP
V
CC
Data InData OutHigh-Z
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SIGNATURE MODE
V
IL
V
IL
V
CC
V
ID
V
IL
V
ID
V
IH
CODE
MFGDEVICE
97h85h
Page 3
Austin Semiconductor, Inc.
UVEPROM
SMJ27C512
READ/OUTPUT DISABLE
When the outputs of two or more SMJ27C512 are connected
in parallel on the same bus, the output of any particular device
in the circuit can be read with no interference from
competing outputs of the other devices. T o read the output of
the selected SMJ27C512, a low-level signal is applied to the
E\ and G\ /VPP. All other devices in the circuit should have
their outputs disabled by applying a high-level signal to one of
these pins. Output data is accessed at pins DQ0 through DQ7.
LA TCHUP IMMUNITY
Latchup immunity on the SMJ27C512 is a minimum of 250mA
on all inputs and outputs. This feature provides latchup
immunity beyond any potential transients at the printed
circuit board level when the EPROM is interfaced to
industry-standard TTL or MOS logic devices. Input/output
layout approach controls latchup without compromising
performance or packing density.
POWER DOWN
Active ICC supply current can be reduced from 35mA to
500µA(TTL-level inputs) or 300µA (CMOS-level inputs) by
applying a high TTL/CMOS signal to the E\ pin. In this mode
all outputs are in the high-impedance state.
SNAP! PULSE PROGRAMMING
The SMJ27C512 is programmed using the SNAP! Pulse
programming algorithm as illustrated by the flowchart in
Figure 1. This algorithm programs in a nominal time of seven
seconds. Actual programming time varies as a function of the
programmer used.
Data is presented in parallel (eight bits) on pins DQ0 to DQ7.
Once addresses and data are stable, E\ is pulsed. The SNAP!
Pulse programming algorithm uses an initial pulse of 100µs
followed by a byte verification to determine when the addressed
byte has been successfully programmed. Up to ten 100µs
pulses per byte are provided before a failure is recognized.
The programming mode is achieved when G\ /V
VCC= 6.5V, and E\ = VIL. More than one device can be
programmed when the devices are connected in parallel.
Locations can be programmed in any order. When the SNAP!
Pulse programming routine is complete, all bits are verified
with VCC = 5V, G\ /VPP = VIL, and E\ = VIL.
PP
= 13V,
PROGRAM INHIBIT
Programming can be inhibited by maintaining high level
input on E\.
ERASURE
Before programming, the SMJ27512 is erased by exposing
the chip through the transparent lid to a high-intensity ultraviolet (UV) light (wavelength 2537 Å). EPROM erasure
before programming is necessary to assure that all bits are in
the logic-high state. Logic lows are programmed into the
desired locations. A programmed logic low can be erased
only by ultraviolet light. The recommended minimum
exposure dose (UV intensity x exposure time) is 15 W.s/cm2.
A typical 12mW/cm2, filterless UV lamp erases the device in
21 minutes. The lamp should be located about 2.5cm above
the chip during erasure. After erasure, all bits are in the high
state. It should be noted that normal ambient light contains
the correct wavelength for erasure; therefore, when using
the SMJ27C512, the window should be covered with an opaque
label.
PROGRAM VERIFY
Programmed bits can be verified with G\ /VPP and E\ = VIL.
SIGNA TURE MODE
The signature mode provides access to a binary code
identifying the manufacturer and device type. This mode is
activated when A9 (terminal 24) is forced to 12V ±0.5V. Two
identifier bytes are accessed by A0 (terminal 10); i.e.,
A0 = VIL accesses the manufacturer code, which is output on
DQ0-DQ7; A0 = VIH accesses the device code, which is also
output on DQ0-DQ7. All other addresses must be held at VIL.
Each byte possesses odd parity on bit DQ7. The
manufacturer code for these devices is 97h and the device
code is 85h.
SMJ27512
Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Page 4
UVEPROM
SMJ27C512
Austin Semiconductor, Inc.
FIGURE 1. SNAP! PULSE PROGRAMMING FLOW CHART
START
Address = First Location
Increment
Address
VCC = 6.5V ± 0.25V, G\ /VPP = 13V ± 0.25V
Program One Pulse = tW = 100µs
Last
Address?
Yes
Address = First Location
X = 0
Verify
Word
Pass
Fail
X = X+1
Program
Mode
Increment Address
Program One Pulse = tW = 100µs
No
X = 10?
Interactive
Mode
SMJ27512
Rev. 1.0 9/01
No
VCC = 5V ± 0.5V, G\ /VPP = V
Last
Address?
Yes
Compare
All Bytes
to Original
Data
Pass
Device Passed
IL
Fail
Yes
Device Failed
Final
Verification
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
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Austin Semiconductor, Inc.
UVEPROM
SMJ27C512
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage Range, VCC**...........................-0.6V to +7.0V
Supply Voltage Range, Vpp**.........................-0.6V to +14.0V
Input Voltage Range, All inputs except A9**....-0.6V to 6.5V
A9....-0.6V to +13.5V
Output Voltage Range**...............................-0.6V to VCC +1V
Operating Cage Temperature Range, TC.........-55°C to 125°C
Storage Temperature Range, T
.....................-65°C to 150°C
stg
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
** All voltage values are with respect to GND.
RECOMMENDED OPERATING CONDITIONS
MINNOMMAXUNIT
Read Mode
V
CC
G\ /V
V
Supply Voltage
Supply Voltage
PP
Voltage level on A9 for signature mode
ID
1
SNAP! Pulse programming algorithm
2
SNAP! Pulse programming algorithm
TTL2
High-level DC input voltageV
IH
V
T
NOTES:
1. VCC must be applied before or at the same time as G\ /VPP and removed after or at the same time as G\ /VPP. The deivce must not be inserted into or removed
from the board when G\ /VPP or VCC is applied.
2. G\ /VPP can be connected to VCC directly (except in the program mode). VCC supply current in this case is ICC + IPP.
Low-level DC input voltage
IL
Operating case temperature
C
CMOS
TTL-0.50.8V
CMOS-0.50.2V
4.555.5V
6.256.56.75V
12.751313.25V
11.512.5V
V
+1
CC
V
-0.2VCC+1
CC
-55125°C
V
V
ELECTRICAL CHARACTERISTICS O VER RECOMMENDED RANGES OF
OPERA TING CONDITIONS
PARAMETER
V
V
I
I
NOTES:
1. Typical values are at TC=25°C and nominal voltages.
2. This parameter has been characterized at 25°C and is not production tested.
SMJ27512
Rev. 1.0 9/01
High-level output voltage
OH
Low-level output voltage
OL
Input current (leakage)
I
I
Output current (leakage)
I
O
I
PP
CC1VCC
CC2
supply current (during program pulse)
G\ /V
PP
supply current (standby)
supply current (active)
V
CC
2
TTL-Input Level
CMOS-Input Level
TEST CONDITIONSMIN
IOH = -400µA
IOL = 2.1mA
VI = 0V to 5.5V
VO = 0V to V
G\ /VPP = 13V
= 5.5V, E\=V
V
CC
V
= 5.5V, E\=V
CC
E\=VIL, VCC=5.5V
t
= minimum cycle time,
cycle
outputs open
CC
IH
CC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
2.4
1
TYP
3570
3550
MAX
0.4
10
10
500
325
Page 6
UVEPROM
SMJ27C512
Austin Semiconductor, Inc.
CAPACITANCE O VER RECOMMENDED RANGES OF SUPPLY VOLT AGE AND
OPERATING CASE TEMPERATURE, f = 1MHz*
PARAMETER
C
C
C
G/VPP
* Capacitance measurements are made on sample basis only.
** All typical values are at T
Input capacitance
I
Output capacitance
O
G\ /VPP input capacitanceG\ /V
= 25°C and nominal voltages.
C
SWITCHING CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPL Y
VOLTAGE AND OPERATING CASE TEMPERA TURE
PARAMETER
Access time from address150200250ns
t
a(A)
t
Access time from E\150200250ns
a(E)
Output enable time from G\ /V
t
en(G)
Output disable time from G\ /VPP or E\,
t
dis
whichever occurs first
Output data valid time after change of
t
v(A)
address, E\, or G\, whichever occurs first
NOTES:
1. Timing measurements are made at 2V for logic high and 0.8V for logic low. (see Figure 2)
2. Common test conditions apply for t
3. V alue calculated from 0.5V delta to measured output level. This parameter is only sampled and not 100% tested.
3
except during programming.
dis
TEST CONDITIONSTYP**UNIT
6pF
10pF
20
1,2
-15-25
MIN MAX MIN MAX MIN MAX
050060060ns
000 ns
PP
V
I
V
O
CONDITIONS
3
= 0V
= 0V
= 0V
PP
TEST
See Figure 2
pF
-20
7075100ns
UNIT
RECOMMENDED TIMING REQUIREMENTS FOR PROGRAMMING: VCC = 6.5V and
G\ /VPP = 13V (SNAP! Pulse), TC = 25°C (see Figure 2)
MINNOMMAXUNIT
t
dis(E)
t
h(A)
t
h(D)
t
h(VPP)
t
w(IPGM)
t
rec(PG)
t
su(A)
t
su(D)
t
su(Vpp)
t
su(Vcc)
t
v(ELD)
t
r(PG)
SMJ27512
Rev. 1.0 9/01
Output disable time from E\
Hold Time, address
Hold time, address
Hold time, G\ /V
PP
Pulse duration, initial program
Recovery time, G\ /V
PP
Setup Time, Address
Setup Time, Data
Setup Time, G\ /V
Setup Time, V
PP
CC
Data valid from E\ low
G\ /V
rise time
PP
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
0130ns
0µs
2µs
2µs
95100105µs
2µs
2µs
2µs
2µs
2µs
1µs
50ns
Page 7
Austin Semiconductor, Inc.
PARAMETER MEASUREMENT INFORMATION
2.08V
RL = 800Ω
Output Under Test
UVEPROM
SMJ27C512
CL = 100 pF
NOTES:
1. CL includes probe and fixture capacitance.
1
FIGURE 2. LOAD CIRCUIT AND VOLTAGE WAVEFORM
AC testing inputs are driven at 2.4V for logic high and 0.4V for logic low . Timing measurements are made
at 2V for logic high and 0.8V for logic low for both inputs and outputs.
FIGURE 3. READ-CYCLE TIMING
SMJ27512
Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
** Parts are listed on SMD under the old Texas Instruments part number. ASI purchased this product line in November of 1999.
SMJ27512
Rev. 1.0 9/01
11
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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