Datasheet SMH4812G, SMH4812S Datasheet (SUMMIT)

Page 1
SUMMIT
MICROELECTRONICS, Inc.
FEATURES
SMH4812
Preliminary
!!
! Soft Starts Main Power Supply on Card Insertion
!!
or System Power Up
!!
! Senses Card Insertion via Short Pins or Ejector
!!
Switches
!!
! Master Enable to Allow System Control of Power
!!
Up or Down
""
" Can be used as a Temperature Sense Input
""
!!
! Programmable Independent Controls of a DC/DC
!!
Converter
""
" Not Enabled until Host Supply Fully Soft
""
Started
""
" Programmable Time Delay
""
""
" Available Input to hold off Dependant Enables
""
until Conditions are Satisfied
!!
! Highly Programmable Circuit Breaker
!!
""
" Programmable Quick-Trip
""
""
" Programmable Current Limiting
""
""
" Programmable Duty Cycle Times
""
""
" Programmable Over-current Filter
""
TM
Values
SIMPLIFIED APPLICATION DRAWING
!!
! Programmable Host Voltage Fault Monitoring
!!
""
" Programmable Under-Voltage Hysteresis
""
""
" Programmable UV/OV Voltage Filter
""
""
" Programmable Fault Mode: Latched or Duty
""
Cycle
!!
! Programmable Forced Shutdown Timer
!!
!!
! 2.5V and 5.0V Reference Outputs
!!
""
" Eliminates the Need for Other Primary Volt-
""
ages
""
" Easy Expansion of External Monitor Func-
""
tions
!!
! Supply Range +20VDC to >+500VDC
!!
0V
Disable/Enable
ENPG
FS#
FAULT#
Pin Detect
VDD
PD1#
UV
SMH4812
PG2#
5.0VREF
Pin Detect
OV
PD2#
VSS
CBSENSE
VGATE
2.5VREF
–48V
©SUMMIT MICROELECTRONICS, Inc., 2000 • 300 Orchard City Dr., Suite 131 • Campbell, CA 95008 • Phone 408-378-3970 • FAX 408-378-6586 • www.summitmicro.com
Characteristics subject to change without notice
2055 4.0 12/22/00
DC/DC
2055 SAD 1.1
1
Page 2
DESCRIPTION
SMH4812
Preliminary
The SMH4812 is designed to control hot swapping of plug­in cards operating from a single supply, which can have an output range from 20V to 500V. The SMH4812 hot-swap controller provides under-voltage and over-voltage moni­toring of the host power supply, it drives an external power MOSFET switch that connects the supply to the load, and it protects against over-current conditions that might dis­rupt the host supply. When the input and output voltages to the SMH4812 controller are within specification it pro-
FUNCTIONAL BLOCK DIAGRAM
VDD
DRAIN
SENSE
16
1
50k
12VREF
+
vides a Power Good logic output that may be used to enable a DC-DC converter. Additional features of the device include: temperature sense or master enable input, 2.5V and 5V reference outputs for expanding moni­tor functions, two Pin-Detect enable inputs for fault protec­tion, and duty-cycle or latched over-current protection modes. All of these features can be programmed by the factory according to the user's requirements.
ENPG
14
PROGRAMM-
ABLE
SHUTDOWN
TIMER
13
12
11
FS#
2.5VREF
5.0VREF
EN/TS
PD1# PD2#
VSS
CBSENSE
2
UV
OV
50k
50k
3
4 5
9
10
12V
5V
8
PROGRAMM-
7
Programmable
Quick Response
2.5V
ABLE
DELAY
50mV
Ref. Voltage
+
+
+
+
+
FILTER
DUTY
CYCLE
TIMER
2055 4.0 12/22/00
50k
PROGRAMM-
ABLE
DELAY
15
PG#
VGATE SENSE
2
VGATE
6
FAULT#
2055 BD 3.0
SUMMIT MICROELECTRONICS, Inc.
Page 3
PIN CONFIGURATION
SMH4812
Preliminary
SS
1 2 3 4 5 6 7 8
DRAIN SENSE
VGATE
EN/TS
PD1# PD2#
FAULT#
CBSENSE
V
PIN DESCRIPTIONS
DRAIN SENSE (1)
The DRAIN SENSE input monitors the voltage at the drain of the external power MOSFET switch with respect to VSS. An internal 10µA source pulls the DRAIN SENSE signal towards the 5V reference level. DRAIN SENSE must be held below 2.5V to enable the PG outputs.
EN/TS (3)
The Enable/Temperature Sense input is the master en­able input. If EN/TS is less than 2.5V, VGATE will be disabled. This pin has an internal 200kW pull-up to 5V.
V
16 15 14 13 12 11 10
PG# ENPG FS#
2.5V 5V OV UV
9
2055 PCon 2.0
DD
REF
REF
OV (10)
The OV pin is used as an over-voltage supply monitor, typically in conjunction with an external resistor ladder. VGATE will be disabled if OV is greater than 2.5V. A filter delay is available on the OV input.
VGATE (2)
The VGATE output activates an external power MOSFET switch. This signal supplies a constant current output (100µA typical), which allows easy adjustment of the MOSFET turn on slew rate.
PD1#, PD2# (4, 5)
These are logic level active low inputs that can optionally be employed to enable VGATE and the PG outputs when they are at VSS. These pins each have an internal 50kW pull-up to 5V.
CBSENSE (7)
The circuit breaker sense input is used to detect over­current conditions across an external, low value sense resistor (RS) tied in series with the Power MOSFET. A voltage drop of greater than 50mV across the resistor for longer than t
will trip the circuit breaker. A program-
CBD
mable Quick-Trip sense point is also available.
UV (9)
The UV pin is used as an under-voltage supply monitor, typically in conjunction with an external resistor ladder. VGATE will be disabled if UV is less than 2.5V. Program­mable internal hysteresis is available on the UV input, adjustable in increments of 62.5mV. Also available is a filter delay on the UV input.
FAULT# (6) FAULT# is an open-drain, active-low output that indicates
the fault status of the device.
5VREF (11)
This is a precision 5V output reference voltage that may be used to expand the logic input functions on the SMH4812. The reference output is with respect to VSS.
2.5VREF (12)
This is a precision 2.5V output reference voltage that may be used to expand the logic input functions on the SMH4812. The reference output is with respect to VSS.
FS# (13)
The Forced Shutdown (FS#) pin is an active low input that causes VGATE and PG outputs to be shut down at any time after an internal hold-off timer has expired. The hold­off timer allows supervisory circuits on the secondary side (which are not powered up initially) to control shut down of the SMH4812 via an opto-isolator. This input has no pull­up resistor.
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
3
Page 4
SMH4812
Preliminary
ENPG (14)
The ENPG input controls the PG# output. When ENPG is pulled low the PG# output is immediately placed in a high impedance state. If ENPG is driven high then the PG# output will immediately be driven low.
PG# (15)
PG# is an open-drain, active-low output with no internal pull-up resistor. It can be used to switch a load or enable a DC/DC converter. PG# is enabled immediately after VGATE reaches V
– VGT and the DRAIN SENSE
DD
voltage is less than 2.5V. Voltage on these pins cannot exceed 12V, as referenced to V
SS.
VDD (16)
VDD is the positive supply connection. An internal shunt regulator connected between VDD and VSS develops ap­proximately 12V that supplies the SMH4812. A resistor must be placed in series with the VDD pin to limit the regulator current (RD in the application illustrations).
V
(8)
SS
VSS is connected to the negative side of the supply.
4
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 5
ABSOLUTE MAXIMUM RATINGS*
SMH4812
Preliminary
Temperature Under Bias ...................... –55°C to 125°C
Storage Temperature ........................... –65°C to 150°C
Lead Solder Temperature (10 secs) ................... 300 °C
Terminal Voltage with Respect to VSS:
V
................................. –0.5V to V
DD
DD
OV, UV, DRAIN SENSE,
FS#, CBSENSE .....–0.5V to VDD+0.5V
PD1#, PD2#, ENPG, EN/TS ......... 10V
FAULT#, PG# ........–0.5V to VDD+0.5V
VGATE ................................ VDD+0.5V
AC OPERATING CHARACTERISTICS
lobmySnoitpircseD.niM.pyT.xaMstinU
t
DBC
t
DGV
t
NDTHSTSF
t
CYC
t
TSRBC
t
FVUP
t
DDP
)retlif(
yaleddooGrewoPelbammargorP
VottluaFmorfyalednwodtuhstsaF
ETAG
emitelcycrekaerbtiucriC5.2s
BC
TESER
htdiweslup002sn
retlifegatloV-rednUelbammargorP
tceteDniPelbammargorP
*COMMENT
Stresses listed under Absolute Maximum Ratings may cause perma­nent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
5sµ
05
yaledrekaerBtiucriCVm05elbammargorP
*
051sµ 004sµ
05sµ
052sµ 005sµ
0051sµ
*
5
02sm 08sm
061sm
ffo002sn
FFO
*
5sm
08sm
061sm
5.0sm
5sm
*
08
061sm
2055 Prog Table
sµ
sm
sm
* = Default value
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
5
Page 6
DC OPERATING CHARACTERISTICS
(Over Recommended Operating Conditions; Voltages are relative to VSS, except VGT)
lobmySretemaraPsnoitidnoC.niM.pyT.xaMstinU
V
DD
V5
FER
I
5DAOL
V5.2
FER
I
5.2DAOL
I
DD
V
VU
V
TSYHVU
V
VO
V
TSYHVO
V
ETAG
I
ETAG
V
ESNES
I
ESNES
V
BC
V
BCQ
V
STNE
V
V V
V
I V
(1) TA = 25ºC.
TSYHSTNE
HI
LI
LO
LI
TG
V
ETAG
V
ETAG
egatlovylppuSI
tuptuoecnereferV5I
tnerructuptuoecnereferV5I
tuptuoecnereferV5.2I
tnerructuptuoecnereferV5.2I
Am3=112131V
DD
Am3=57.400.552.5V
DD
Am3=1 1Am
DD
DD
DD
)1(Am3=574.2005.2525.2V
Am3=2.0 1Am
tnerrucylppusrewoP 01Am
dlohserhtegatloV-rednUI
siseretsyhegatloV-rednUI
dlohserhtegatloV-revOI
siseretsyhegatloV-revOI
DD
DD
DD
DD
)1(Am3=574.2005.2525.2V
Am3=36Vm
)1(Am3=574.2005.2525.2V
Am3=01Vm
egatlovtuptuo V
tuptuotnerruc001Aµ
dlohserhtESNESNIARDI
tuptuotnerrucESNESNIARDV
dlohserhtrekaerbtiucriCI
DD
ESNES
DD
)1(Am3=574.2005.2525.2V
V=
)1(9 0111Aµ
SS
Am3=040506Vm
002Vm
tiucricpirTkciuQelbammargorP
dlohserhtrekaerb
001Vm
06Vm
ffO
dlohserhtST/NEI
siseretsyhST/NEI
DD
DD
)1(Am3=574.2005.2525.2V
Am3=01Vm
3V5
GPNE:egatlovhgihtupnI
02V
#TLUAF:egatlovwoltuptuOI
#GP:egatlovwoltuptuOI
ST/NE,#2DP,#1DP:tnerructupnIV
Am3=0 4.0V
LO
Am3=0 4.0V
LO
V=
LI
SS
001Aµ
dlohserhtetaG7.08.10.3V
SMH4812
Preliminary
DD
FER
V
V
2055 Elect Table
RECOMMENDED OPERATING CONDITIONS
Temperature –40°C to 85°C.
6
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 7
FUNCTIONAL DESCRIPTION
SMH4812
Preliminary
GENERAL OPERATION
The SMH4812 is an integrated power controller for hot swappable add-in cards. The device operates from a wide supply range and generates the signals necessary to drive an isolated output DC/DC converter. As a typical add-in board is inserted into the powered backplane physical connections must first be made with the chassis to dis­charge any electrostatic voltage potentials. The board then contacts the long pins on the backplane that provide power and ground. As soon as power is applied the device starts up, but does not immediately apply power to the output load. Under-voltage and over-voltage circuits inside the controller check to see that the input voltage is within a user-specified range, and pin detection signals determine whether the card is seated properly.
These requirements must be met for a Pin Detect Delay period of t
, after which time the hot-swap controller
PDD
enables VGATE to turn on the external power MOSFET switch. The VGATE output is current limited to I
VGATE
allowing the slew rate to be easily modified using external passive components. During the controlled turn-on period the VDS of the MOSFET is monitored by the drain sense input. When drain sense drops below 2.5V, and VGATE gets above VDD – VGT, the power good output can begin turning on the DC/DC controller. The Power Good Enable input may be used to activate or deactivate the output load.
Steady state operation is maintained as long as all condi­tions are normal. Any of the following events may cause the device to disable the DC/DC controller by shutting down the power MOSFET: an under-voltage or over­voltage condition on the host power supply; an over­current event detected on the CBSENSE input; a failure of the power MOSFET sensed via the DRAIN SENSE pin; the pin detect signals becoming invalid; the master enable (EN/TS) falling below 2.5V; the FS# input being driven low by events on the secondary side of the DC/DC controller. The SMH4812 may be configured so that after any of these events occur the VGATE output shuts off and either latches into an off state or recycles power after a cooling down period, t
Powering V
DD
CYC
.
The SMH4812 contains a shunt regulator on the VDD pin that prevents the voltage from exceeding 12V. It is necessary to use a dropper resistor (RD) between the host power supply and the VDD pin in order to limit current into the device and prevent possible damage. The dropper resistor allows the device to operate across a wide range of system supply voltages, and also helps protect the
device against common-mode power surges. Refer to the Applications Section for help on calculating the R tance value.
System Enables
There are several enabling inputs, which allow a host system to control the SMH4812. The Pin Detect pins (PD1# & PD2#) are two active low enables that are generally used to indicate that the add-in circuit card is properly seated. This is typically done by clamping the inputs to V
through the implementation of an injector
SS
switch, or alternatively through the use of a staggered pins at the card-cage interface. Two shorter pins arrayed at opposite ends of the connector force the card to be fully seated (not canted) before both pin detects are enabled. Care must be taken not to exceed the maximum voltage rating of these pins during the insertion process. Refer to details in the Applications Section for proper circuit imple­mentation.
,
The EN/TS input provides an active high comparator input that may be used as a master enable or temperature sense input. These inputs must be held low for a period of t
before a power-up sequence may be initiated.
PDD
Under-/Over-Voltage Sensing
The Under-Voltage (UV) and Over-Voltage (OV) inputs provide a set of comparators that act in conjunction with an external resistive divider ladder to sense when the host supply voltage exceeds the user defined limits. If the input to the UV pin rises above 2.5V, or the input to the OV pin falls below 2.5V for a period of t quence may be initiated. The t
, the power-up se-
PDD
filter helps prevent
PDD
spurious start-up sequences while the card is being in­serted. If UV falls below 2.5V or OV rises above 2.5V, the PG and VGATE outputs will be shut down immediately.
Under-/Over-Voltage Filtering
The SMH4812 may also be configured so that an out of tolerance condition on UV/OV will not shut off the output immediately. Instead, a filter delay may be inserted so that only sustained under-voltage or over-voltage conditions will shut off the output. When the UV/OV filter option is enabled an out of tolerance condition on UV/OV for longer than the filter delay time, t
, activates the FAULT#
UOFLTR
output, and the VGATE and PG outputs will be latched in the off state. See Figure 1. To initiate another power-up sequence the FAULT# output must first be reset. Refer to the appropriate section on resetting the FAULT# output. The Under-/Over-Voltage Filtering feature is disabled in the default configuration of the device.
resis-
D
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
7
Page 8
SMH4812
Preliminary
OV / UV
FAULT#
V
DD
2.5V
t
UOFLTR
11 VDD 13
2055 Fig01
CBSENSE
VGATE
<t
PUVF
T
CBD
50mV
T
CYC
T
CBD
2055 Fig02
Figure 2. Circuit Breaker Cycle ModeFigure 1. Under-/Over-Voltage Filter Timing
UV
OV
PD1#/ PD2#
VGATE
DRAIN SENSE
CBSENSE
PG#
5V
2.5V
50mV
REF
REF
t
PDD
VDD – V
GT
2.5V
REF
V
DD
<t
CBD
2055 Fig03
Figure 3. Power On Timing Sequence
8
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 9
SMH4812
Preliminary
Under-Voltage Hysteresis
The Under-Voltage comparator input may be configured with a programmable level of hysteresis. The compare level may be set in steps (up to 15) of 62.5mV below 2.5V. The default under-voltage hysteresis level is set to
62.5mV.
Soft Start Slew Rate Control
Once all of the preconditions for powering up the DC/DC controllers have been met, the SMH4812 provides a means to soft start the external power FET. It is important to limit in-rush current to prevent damage to the add-in card or disruptions to the host power supply. For example, charging the filter capacitance (normally required at the input of the DC/DC controllers) too quickly may generate very high current. The VGATE output of the SMH4812 is current limited to I
, allowing the slew rate to be easily
VGATE
modified using external passive components. The slew rate may be found by dividing I
by the gate-to-drain
VGATE
capacitance placed on the external FET. A complete design example is given in the Applications Section.
Load Control Sequencing the Secondary Sup­plies
Once power has been ramped to the DC/DC controllers, two conditions must be met before the PG# output can be enabled: the Drain Sense voltage must be below 2.5V, and the VGATE voltage must be greater than VDD – VGT. The Drain Sense input helps ensure that the power MOS­FET is not absorbing too much steady state power from operating at a high VDS. This sensor remains active at all times (except during the current regulation period). The VGATE sensor makes sure that the power MOSFET is operating well into its saturation region before allowing the loads to be switched on. Once VGATE reaches VDD – V
GT
this sensor is latched. When the external MOSFET is properly switched on the
PG# output may be enabled (if ENPG is high). Output PG# is activated after a t
delay. The delay time is program-
PGD
mable from 50µs to 160ms.
timer allows the SMH4812 to ignore the state of the FS# input until the timer period expires. The FS# input must be driven high by the end of this timer period. A low level on this input will cause a Fault condition, driving FAULT# low and shutting off the VGATE and PG# outputs.
The purpose of the holdoff timer is to allow enough time for devices on the secondary side of the DC/DC controllers to power up and stabilize. This unique feature of the SMH4812 allows supervisory circuits such as an SMS44 to control the shutdown of the primary side soft start circuit, even though the secondary side initially has no power.
The FS# input can be programmed to act as a second ENPG input controlling the PG# output.
Circuit Breaker Operation
The SMH4812 provides a number of circuit breaker func­tions to protect against over current conditions. A sus­tained over-current event could damage the host supply and/or the load circuitry. The boards load current passes through a series resistor (RS) connected between the MOSFET source (which is tied to CBSENSE) and VSS. The breaker trips whenever the voltage drop across RS is greater than 50mV for more than t
(a programmable
CBD
filter delay ranging from 10µs to 500µs).
Quick-Trip
TM
Circuit Breaker
Additionally, the SMH4812 provides a Quick-Trip feature that will cause the circuit breaker to trip immediately if the voltage drop across RS exceeds V
. The Quick-Trip
QCB
level may be set to 60mV, 100mV (default), 200mV, or the feature may be disabled.
<T
CBD
CBSENSE
V
QCB
50mV
The PG# output has a 12V withstand capability, so high voltages must not be connected to this pin. A bipolar transistor or an opto-isolator can be used to boost the withstand voltage to that of the host supply. See Figure 9 for connections.
Forced Shutdown Secondary Feedback
The Forced Shutdown signal (FS#) is an active low input that provides a method of receiving feedback from the secondary side of the DC/DC controllers. A built-in holdoff
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
T
FSTSHTDN
VGATE
Figure 4. Circuit Breaker Quick Trip Response
2055 Fig04
9
Page 10
Current Regulation
The current regulation mode is an optional feature that provides a means to regulate current through the MOS­FET for a programmable period of time. See Figures 5a and 5b. If enabled the device will start the internal timer when the voltage at CBSENSE exceeds 50mV (A & G, H). Also, it attempts to limit the voltage at CBSENSE to 60mV by regulating the VGATE output (B & C vs. I). The circuit breaker will trip if the over-current condition remains after the time-out (D, E, F; & J, K, L). However, if CBSENSE drops below 50mV before the timer ends, the timer is reset and VGATE resumes normal operation. If the Quick-Trip level is exceeded then the device will bypass the current regulation timer and shut down immediately. The Current Regulation feature is disabled in the default configuration.
12V
0V
50mV
0V
VGATE
1
FAULT#
0
CBSENSE
SMH4812
Preliminary
C
F
E
B
A
D
2055 Fig05a
Non-Volatile Fault Latch
The SMH4812 also provides an optional nonvolatile fault latch (NVFL) circuit breaker feature. The nonvolatile fault latch essentially provides a programmable fuse on the circuit breaker. When enabled the nonvolatile fault latch will be set whenever the circuit breaker trips. Once set, it cannot be reset by cycling power.
N
OTE
UNTIL
: THE
IT IS
DEVICE REMAINS PERMANENTLY DISABLED
REPROGRAMMED AT THE FACTORY
.
As long as the NVFL is set, the FAULT# output will be driven active. The Non-Volatile Fault Latch feature is disabled in the default configuration.
Resetting FAULT#
When the circuit breaker trips the VGATE output is turned off and FAULT# is driven low. In the default condition the breaker resets automatically after a time of t
CYC
. In the latched condition cycling power to the board or toggling the EN/TS input will also reset the circuit breaker. If the over current condition still exists after the MOSFET switches back on, the circuit breaker will re-trip.
Figure 5.a. Current Regulation & Shutdown
12V
VGATE
0V
1
FAULT#
0
50mV
CBSENSE
0V
I
L
K
H
G
J
2055 Fig05b
Figure 5.b. Current Regulation & Shutdown
10
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 11
APPLICATIONS
SMH4812
Preliminary
Operating at High Voltages
The breakdown voltage of the external active and passive components limits the maximum operating voltage of the SMH4812 hot-swap controller. Components that must be able to withstand the full supply voltage are: the input and output decoupling capacitors, the protection diode in se­ries with the DRAIN SENSE pin, the power MOSFET switch and the capacitor connected between its drain and gate, the high-voltage transistors connected to the power good outputs, and the dropper resistor connected to the controllers VDD pin.
Over-Voltage and Under-Voltage Resistors
In the following examples, the three resistors, R1, R2, and R3, connected to the OV and UV inputs, must be capable of withstanding the maximum supply voltage of several hundred volts. The trip voltage of the UV and OV inputs is
2.5V relative to V
. As the input impedance of UV and OV
SS
is very high, large value resistors can be used in the resistive divider. The divider resistors should be high stability, 1% metal-film resistors to keep the under-voltage and over-voltage trip points accurate.
Telecom Design Example
A hot-swap telecom application may use a 48V power supply with a –25% to +50% tolerance (
i.e.
, the 48V supply can vary from 36V to 72V). The formulae for calculating R1, R2, and R3 follow.
First a peak current, ID
, must be specified for the
MAX
resistive network. The value of the current is arbitrary, but it can't be to high (self-heating in R3 will become a problem), or too low (the value of R3 becomes very large, and R3 becomes very expensive). To set the calculations a nominal value of 250µA will be assumed.
With VOV (2.5V) being the over-voltage trip point, R1 is calculated by the formula:
V
OV
=
R1
ID
MAX
.
Substituting:
MIN
VS
MAX
.
×
ID VS
MAX MIN
=
ID
Substituting:
µ
72V
MIN UV
ID
MIN
µ
×
µ
.
:
MIN
.
.
250 A 36V
==
ID 125 A
MIN
Now the value of R3 is calculated from ID
VS V
=
R3
V
is the under-voltage trip point, also 2.5V. Substituting:
UV
36V 2.5V
==
R3 268k
125 A
The closest standard 1% resistor value is 267k Then R2 is calculated:
V
+=
R1 R2
()
ID
UV
MIN
,
or
V
UV
=−
R2 R1
ID
MIN
.
Substituting:
2.5V
=−==
R2 10k 20k 10k 10k
µ
125 A
.
Dropper Resistor Selection
The SMH4812 is powered from the high-voltage supply via a dropper resistor, RD. The dropper resistor must provide the SMH4812 (and its loads) with sufficient oper­ating current under minimum supply voltage conditions, but must not allow the maximum supply current to be exceeded under maximum supply voltage conditions.
The dropper resistor value is calculated from:
2.5V
==
R1 10k
µ
250 A
.
Next the minimum current that flows through the resistive divider, ID
, is calculated from the ratio of minimum and
MIN
maximum supply voltage levels:
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
R
where VS V
is the upper limit of the SMH4812 supply voltage,
DDMAX
MIN DD
=
D
II
DD LOAD
is the lowest operating supply voltage,
MIN
MAX
+
,
VS V
IDD is minimum current required for the SMH4812 to operate, and I
is any additional load current from the
LOAD
2.5V and 5V outputs and between VDD and VSS.
11
Page 12
SMH4812
Preliminary
The min/max current limits are easily met using the drop­per resistor, except in circumstances where the input voltage may swing over a very wide range (
e.g.
, input varies between 20V and 100V). In these circumstances it may be necessary to add an 11V zener diode between VDD and VSS to handle the wide current range. The zener voltage should be below the nominal regulation voltage of the SMH4812 so that it becomes the primary regulator.
MOSFET VDS(ON) Threshold
The drain sense input on the SMH4812 monitors the voltage at the drain of the external power MOSFET switch with respect to V
. When the MOSFETs VDS is below the
SS
user-defined threshold the MOSFET switch is considered to be ON. The VDS(ON)
THRESHOLD
is adjusted using the resistor, RT, in series with the drain sense protection diode. This protection, or blocking, diode prevents high voltage breakdown of the drain sense input when the MOSFET switch is OFF. A low leakage MMBD1401 diode offers protection up to 100V. For high voltage applications (up to 500V) the Central Semiconductor CMR1F-10M diode should be used. The VDS(ON)
THRESHOLD
is calcu-
lated from:
VON V I R V
() ( )
where V
DS SENSE SENSE T DIODE
DIODE
THRESHOLD
is the forward voltage drop of the protection diode. The VDS(ON) due to the temperature dependence of V The calculation below gives the VDS(ON)
=−×
THRESHOLD
varies over temperature
DIODE
THRESHOLD
and I
SENSE
under the worst case condition of 85°C ambient. Using a 68k resistor for RT gives:
VON 2.5V15A68k 0.5V1V
() ( )
DS
THRESHOLD
=− ×Ω−=
µ
The voltage drop across the MOSFET switch and sense resistor, V
, is calculated from:
DSS
The dropper resistor value should be chosen such that the minimum and maximum I
and VDD specifications of the
DD
SMH4812 are maintained across the host supplys valid operating voltage range. First, subtract the minimum V of the SMH4812 from the low end of the voltage, and divide by the minimum IDD value. Using this value of resistance as RD find the operating current that would result from running at the high end of the supply voltage to verify that the resulting current is less than the maximum IDD current allowed. If some range of supply voltage is chosen that would cause the maximum IDD specification to be violated, then an external zener diode with a breakdown voltage of 12V should be used across V
DD
.
As an example of choosing the proper RD value, assume the host supply voltage will range from 36 to 72V. The largest dropper resistor that can be used is: (36V-11V)/ 3mA = 8.3k. Next, confirm that this value of RD also works at the high end: (72V-13V)/8.3k = 7.08mA, which is less than 10mA.
The FS# input can also be used in conjunction with a secondary-side supervisory circuit providing a positive feedback loop during the power up sequence. As an example, assume the SMH4812 is configured to turn on –
,
48V to a DC/DC converter with a 1.6ms delay. Further assume all of the enable inputs are true and PG# has just been sequenced on. If FS# option 4 (100 has been selected, then FS# must be driven high within
.
in register 5)
BIN
1.6ms after PG# goes low, otherwise the PG output will be disabled. Ideally, there would be a secondary-side super­visor similar to the SMS44 that would have its reset time­out period programmed to be less than 1.6ms. After the supply turns on the RESET# output of the SMS44 would be released and FS# pulled high. However, if for any
.
reason the supply doesn't turn on, the RESET# will not be released and the SMH4812 will disable the PG output.
DD
=+
VIRR
DSS D S ON
()
,
where ID is the MOSFET drain current, RS is the circuit breaker sense resistor and RON is the MOSFET on resis­tance.
12
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 13
APPLICATIONS CIRCUITS
SMH4812
Preliminary
–48V
0V
10nF 100V
10k 10k
100nF
50V
R1
R3
R2
EN/TS
UV
OV
PD1#
PD2#
FAULT#
SS
V
20m
6.8k
DD
V
R
S
R
D
REF
2.5V
CBSENSE
ENPG
SMH4812
GATE
V
100nF
1k
*10
10nF 100V
FS#
PG#
5V
REF
DRAIN SENSE
R
T
68k
MMBD1401
MMBD-
47k
100nF
50V
0V
MMBTA-
06LT1
1401
100µF
100V
48V
2055 Fig06
Figure 6. Changing Polarity of Power Good Output (PG#)
Note: Figures 6 through 9 the *10 resistor must be located as close as possible to the MOSFET
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
13
Page 14
SMH4812
R
T
68k
1k
*10
10nF 100V
MMBD1401
100nF
100k
MMBTA06LT1
100nF
50V
100nF
50V
10nF 100V
UV
OV
PD1#
PD2#
FAULT#
V
DD
ENPG
PG#
5V
REF
SMH4812
V
SS
CBSENSE
V
GATE
DRAIN SENSE
0V
–48V
10k 10k
R1
R
D
6.8k
100µF
100V
R3
1M
R2
R
S
20m
0V
–48V
2.5V
REF
EN/TS
+
LMV331
1k
50k
NTC
50k
@T
MAX
100nF
50V
2055 Fig07
FS#
Preliminary
Note: Figures 6 through 9 the *10 resistor must be located as close as possible to the MOSFET
14
Figure 7. Overtemperature Shutdown
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 15
SMH4812
Preliminary
EN1
EN2
EN3
EN4
–48V
0V
0V
10k
10nF 100V
1M
+
+
LMV
339
+
10k
+
10k
100nF
50V
R3
1k
EN/TS
UV
R2
OV
PD1#
PD2#
FAULT#
R1
SS
V
R
S
20m
R
D
6.8k
DD
REF
V
2.5V
SMH4812
CBSENSE
100nF
*10
ENPG
GATE
V
1k
10nF
100V
FS#
PG#
5V
REF
DRAIN SENSE
100nF
50V
R
T
68k
MMBD1401
MMBTA06LT1
100k
100nF
50V
100µF
100V
48V
2055 Fig08
SUMMIT MICROELECTRONICS, Inc.
Figure 8. Expanding Input Monitoring Capability
2055 4.0 12/22/00
15
Page 16
0V
R3
R
D
6.8k
SMH4812
Preliminary
–48V
10nF 100V
10k 10k
100nF
50V
R2
R1
SS
R
DD
V
S
SMH4812
GATE
CBSENSE
100nF
V
*10
1k
10nF 100V
ENPG
FS#
PG2#
5V
REF
DRAIN SENSE
68k
MMBD1401
MMBTA06LT1
100k
100nF
50V
EN/TS
UV
OV
PD1#
PD2#
FAULT#
V
Figure 9. Typical Application for DC/DC Converter
100µF
100V
DC / DC
Converter
with
Active Low
On/Off Control
+VIN
+VOUT
VIN
VOUT
ON/OFF
2055 Fig09
V
0V
Note: Figures 6 through 9 the *10 resistor must be located as close as possible to the MOSFET
16
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 17
JEDEC MO-137
SMH4812
Preliminary
PACKAGES
SSOP PACKAGE
D
H
1
E
S
A
hx45
C
noisnemiD
.niM.moN.xaM.niM.moN.xaM
0 to 8 typ
L
e
sehcnIsretemilliM
A
2
B
A
A160.0460.0860.055.136.137.1
1A400.0600.08900.021.051.052.0 2A550.0850.0160.04.174.155.1
B800.0010.0210.002.052.013.0 C5700.0800.08900.091.002.052.0 D733.0243.0443.065.896.847.8
E051.0551.0751.018.349.399.3
eCSB520.0CSB536.0 H032.0632.0442.048.599.502.6
h010.0310.0610.052.033.014.0
L610.0520.0530.014.046.098.0 S0050.05250.00550.072.133.104.1
1
2055 SSOP
2055 SSOP Dim
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
17
Page 18
16 PIN SOIC PACKAGE
SMH4812
Preliminary
0.155±0.005
0.236 ± 0.008
.004
Pin 1 Index
0.05 BSC
7 ± 1
0.390 ± 0.005
SOIC 16
0.016 ± 0.003
7 ± 1
.0085 ± .0010 (After Plating)
916
0.151 ± 0.005
81
0 ± 8
155 ± 0.005
DETAIL A
.016 ±.002
45 ± 1
0.024 ± 0.002
0.054 ± 0.005
0.069 MAX
.007 ± .003
7 ± 1
0.390 ± 0.005
Note: 1. Reference: JEDEC publication MS-012 PTX 360-120
2. Unit: Inches
3. Mold flash, protrusion & gate burr shall not exceed 0.006 inch per side.
0.007 ± 0.003
0.023 ± 0.005
0.041
DETAIL A
2055 SOIC 1.0
18
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 19
ORDERING INFORMATION
SMH4812
Preliminary
Base Part Number
SMH4812
G
Package
G = SSOP S = SOIC
2055 T ree 1.0
NOTICE
SUMMIT Microelectronics, Inc. reserves the right to make changes to the products contained in this publication in order to improve design, performance or reliability. SUMMIT Microelectronics, Inc. assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and makes no representation that the circuits are free of patent infringement. Charts and schedules contained herein reflect representative operating parameters, and may vary depending upon a users specific application. While the information in this publication has been carefully checked, SUMMIT Microelectronics, Inc. shall not be liable for any damages arising as a result of any error or omission.
SUMMIT Microelectronics, Inc. does not recommend the use of any of its products in life support or aviation applications where the failure or malfunction of the product can reasonably be expected to cause any failure of either system or to significantly affect their safety or effectiveness. Products are not authorized for use in such applications unless SUMMIT Microelectronics, Inc. receives written assurances, to its satisfaction, that: (a) the risk of injury or damage has been minimized; (b) the user assumes all such risks; and (c) potential liability of SUMMIT Microelectronics, Inc. is adequately protected under the circumstances.
This document supersedes all previous versions. © Copyright 2000 SUMMIT Microelectronics, Inc.
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
19
Loading...