The SMH4812 is designed to control hot swapping of plugin cards operating from a single supply, which can have an
output range from 20V to 500V. The SMH4812 hot-swap
controller provides under-voltage and over-voltage monitoring of the host power supply, it drives an external power
MOSFET switch that connects the supply to the load, and
it protects against over-current conditions that might disrupt the host supply. When the input and output voltages
to the SMH4812 controller are within specification it pro-
FUNCTIONAL BLOCK DIAGRAM
VDD
DRAIN
SENSE
16
1
50kΩ
12VREF
+
–
vides a Power Good logic output that may be used to
enable a DC-DC converter. Additional features of the
device include: temperature sense or master enable
input, 2.5V and 5V reference outputs for expanding monitor functions, two Pin-Detect enable inputs for fault protection, and duty-cycle or latched over-current protection
modes. All of these features can be programmed by the
factory according to the user's requirements.
ENPG
14
PROGRAMM-
ABLE
SHUTDOWN
TIMER
13
12
11
FS#
2.5VREF
5.0VREF
EN/TS
PD1#
PD2#
VSS
CBSENSE
2
UV
OV
50kΩ
50kΩ
3
4
5
9
10
12V
5V
8
PROGRAMM-
7
Programmable
Quick Response
2.5V
ABLE
DELAY
50mV
Ref. Voltage
+
–
+
–
+
–
+
–
+
–
FILTER
DUTY
CYCLE
TIMER
2055 4.0 12/22/00
50kΩ
PROGRAMM-
ABLE
DELAY
15
PG#
VGATE
SENSE
2
VGATE
6
FAULT#
2055 BD 3.0
SUMMIT MICROELECTRONICS, Inc.
Page 3
PIN CONFIGURATION
SMH4812
Preliminary
SS
1
2
3
4
5
6
7
8
DRAIN SENSE
VGATE
EN/TS
PD1#
PD2#
FAULT#
CBSENSE
V
PIN DESCRIPTIONS
DRAIN SENSE (1)
The DRAIN SENSE input monitors the voltage at the drain
of the external power MOSFET switch with respect to VSS.
An internal 10µA source pulls the DRAIN SENSE signal
towards the 5V reference level. DRAIN SENSE must be
held below 2.5V to enable the PG outputs.
EN/TS (3)
The Enable/Temperature Sense input is the master enable input. If EN/TS is less than 2.5V, VGATE will be
disabled. This pin has an internal 200kW pull-up to 5V.
V
16
15
14
13
12
11
10
PG#
ENPG
FS#
2.5V
5V
OV
UV
9
2055 PCon 2.0
DD
REF
REF
OV (10)
The OV pin is used as an over-voltage supply monitor,
typically in conjunction with an external resistor ladder.
VGATE will be disabled if OV is greater than 2.5V. A filter
delay is available on the OV input.
VGATE (2)
The VGATE output activates an external power MOSFET
switch. This signal supplies a constant current output
(100µA typical), which allows easy adjustment of the
MOSFET turn on slew rate.
PD1#, PD2# (4, 5)
These are logic level active low inputs that can optionally
be employed to enable VGATE and the PG outputs when
they are at VSS. These pins each have an internal 50kW
pull-up to 5V.
CBSENSE (7)
The circuit breaker sense input is used to detect overcurrent conditions across an external, low value sense
resistor (RS) tied in series with the Power MOSFET. A
voltage drop of greater than 50mV across the resistor for
longer than t
will trip the circuit breaker. A program-
CBD
mable Quick-Trip sense point is also available.
UV (9)
The UV pin is used as an under-voltage supply monitor,
typically in conjunction with an external resistor ladder.
VGATE will be disabled if UV is less than 2.5V. Programmable internal hysteresis is available on the UV input,
adjustable in increments of 62.5mV. Also available is a
filter delay on the UV input.
FAULT# (6)
FAULT# is an open-drain, active-low output that indicates
the fault status of the device.
5VREF (11)
This is a precision 5V output reference voltage that may be
used to expand the logic input functions on the SMH4812.
The reference output is with respect to VSS.
2.5VREF (12)
This is a precision 2.5V output reference voltage that may
be used to expand the logic input functions on the
SMH4812. The reference output is with respect to VSS.
FS# (13)
The Forced Shutdown (FS#) pin is an active low input that
causes VGATE and PG outputs to be shut down at any
time after an internal hold-off timer has expired. The holdoff timer allows supervisory circuits on the secondary side
(which are not powered up initially) to control shut down of
the SMH4812 via an opto-isolator. This input has no pullup resistor.
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
3
Page 4
SMH4812
Preliminary
ENPG (14)
The ENPG input controls the PG# output. When ENPG is
pulled low the PG# output is immediately placed in a high
impedance state. If ENPG is driven high then the PG#
output will immediately be driven low.
PG# (15)
PG# is an open-drain, active-low output with no internal
pull-up resistor. It can be used to switch a load or enable
a DC/DC converter. PG# is enabled immediately after
VGATE reaches V
– VGT and the DRAIN SENSE
DD
voltage is less than 2.5V. Voltage on these pins cannot
exceed 12V, as referenced to V
SS.
VDD (16)
VDD is the positive supply connection. An internal shunt
regulator connected between VDD and VSS develops approximately 12V that supplies the SMH4812. A resistor
must be placed in series with the VDD pin to limit the
regulator current (RD in the application illustrations).
V
(8)
SS
VSS is connected to the negative side of the supply.
4
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 5
ABSOLUTE MAXIMUM RATINGS*
SMH4812
Preliminary
Temperature Under Bias ...................... –55°C to 125°C
Storage Temperature ........................... –65°C to 150°C
Lead Solder Temperature (10 secs) ................... 300 °C
Terminal Voltage with Respect to VSS:
V
................................. –0.5V to V
DD
DD
OV, UV, DRAIN SENSE,
FS#, CBSENSE .....–0.5V to VDD+0.5V
PD1#, PD2#, ENPG, EN/TS ......... 10V
FAULT#, PG# ........–0.5V to VDD+0.5V
VGATE ................................ VDD+0.5V
AC OPERATING CHARACTERISTICS
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DBC
t
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t
NDTHSTSF
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*COMMENT
Stresses listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions
outside those listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for extended
periods may affect device performance and reliability.
5sµ
05
yaledrekaerBtiucriCVm05elbammargorP
*
051sµ
004sµ
05sµ
052sµ
005sµ
0051sµ
*
5
02sm
08sm
061sm
ffo002sn
FFO
*
—
5sm
08sm
061sm
5.0sm
5sm
*
08
061sm
2055 Prog Table
sµ
sm
sm
* = Default value
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
5
Page 6
DC OPERATING CHARACTERISTICS
(Over Recommended Operating Conditions; Voltages are relative to VSS, except VGT)
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I
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V
BC
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SMH4812
Preliminary
DD
FER
V
V
2055 Elect Table
RECOMMENDED OPERATING CONDITIONS
Temperature–40°C to 85°C.
6
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 7
FUNCTIONAL DESCRIPTION
SMH4812
Preliminary
GENERAL OPERATION
The SMH4812 is an integrated power controller for hot
swappable add-in cards. The device operates from a wide
supply range and generates the signals necessary to drive
an isolated output DC/DC converter. As a typical add-in
board is inserted into the powered backplane physical
connections must first be made with the chassis to discharge any electrostatic voltage potentials. The board
then contacts the long pins on the backplane that provide
power and ground. As soon as power is applied the device
starts up, but does not immediately apply power to the
output load. Under-voltage and over-voltage circuits
inside the controller check to see that the input voltage is
within a user-specified range, and pin detection signals
determine whether the card is seated properly.
These requirements must be met for a Pin Detect Delay
period of t
, after which time the hot-swap controller
PDD
enables VGATE to turn on the external power MOSFET
switch. The VGATE output is current limited to I
VGATE
allowing the slew rate to be easily modified using external
passive components. During the controlled turn-on period
the VDS of the MOSFET is monitored by the drain sense
input. When drain sense drops below 2.5V, and VGATE
gets above VDD – VGT, the power good output can begin
turning on the DC/DC controller. The Power Good Enable
input may be used to activate or deactivate the output load.
Steady state operation is maintained as long as all conditions are normal. Any of the following events may cause
the device to disable the DC/DC controller by shutting
down the power MOSFET: an under-voltage or overvoltage condition on the host power supply; an overcurrent event detected on the CBSENSE input; a failure of
the power MOSFET sensed via the DRAIN SENSE pin;
the pin detect signals becoming invalid; the master enable
(EN/TS) falling below 2.5V; the FS# input being driven low
by events on the secondary side of the DC/DC controller.
The SMH4812 may be configured so that after any of
these events occur the VGATE output shuts off and either
latches into an off state or recycles power after a cooling
down period, t
Powering V
DD
CYC
.
The SMH4812 contains a shunt regulator on the VDD pin
that prevents the voltage from exceeding 12V. It is
necessary to use a dropper resistor (RD) between the host
power supply and the VDD pin in order to limit current into
the device and prevent possible damage. The dropper
resistor allows the device to operate across a wide range
of system supply voltages, and also helps protect the
device against common-mode power surges. Refer to the
Applications Section for help on calculating the R
tance value.
System Enables
There are several enabling inputs, which allow a host
system to control the SMH4812. The Pin Detect pins
(PD1# & PD2#) are two active low enables that are
generally used to indicate that the add-in circuit card is
properly seated. This is typically done by clamping the
inputs to V
through the implementation of an injector
SS
switch, or alternatively through the use of a staggered pins
at the card-cage interface. Two shorter pins arrayed at
opposite ends of the connector force the card to be fully
seated (not canted) before both pin detects are enabled.
Care must be taken not to exceed the maximum voltage
rating of these pins during the insertion process. Refer to
details in the Applications Section for proper circuit implementation.
,
The EN/TS input provides an active high comparator input
that may be used as a master enable or temperature
sense input. These inputs must be held low for a period of
t
before a power-up sequence may be initiated.
PDD
Under-/Over-Voltage Sensing
The Under-Voltage (UV) and Over-Voltage (OV) inputs
provide a set of comparators that act in conjunction with an
external resistive divider ladder to sense when the host
supply voltage exceeds the user defined limits. If the input
to the UV pin rises above 2.5V, or the input to the OV pin
falls below 2.5V for a period of t
quence may be initiated. The t
, the power-up se-
PDD
filter helps prevent
PDD
spurious start-up sequences while the card is being inserted. If UV falls below 2.5V or OV rises above 2.5V, the
PG and VGATE outputs will be shut down immediately.
Under-/Over-Voltage Filtering
The SMH4812 may also be configured so that an out of
tolerance condition on UV/OV will not shut off the output
immediately. Instead, a filter delay may be inserted so that
only sustained under-voltage or over-voltage conditions
will shut off the output. When the UV/OV filter option is
enabled an out of tolerance condition on UV/OV for longer
than the filter delay time, t
, activates the FAULT#
UOFLTR
output, and the VGATE and PG outputs will be latched in
the off state. See Figure 1. To initiate another power-up
sequence the FAULT# output must first be reset. Refer to
the appropriate section on resetting the FAULT# output.
The Under-/Over-Voltage Filtering feature is disabled in
the default configuration of the device.
The Under-Voltage comparator input may be configured
with a programmable level of hysteresis. The compare
level may be set in steps (up to 15) of 62.5mV below 2.5V.
The default under-voltage hysteresis level is set to
62.5mV.
Soft Start Slew Rate Control
Once all of the preconditions for powering up the DC/DC
controllers have been met, the SMH4812 provides a
means to soft start the external power FET. It is important
to limit in-rush current to prevent damage to the add-in
card or disruptions to the host power supply. For example,
charging the filter capacitance (normally required at the
input of the DC/DC controllers) too quickly may generate
very high current. The VGATE output of the SMH4812 is
current limited to I
, allowing the slew rate to be easily
VGATE
modified using external passive components. The slew
rate may be found by dividing I
by the gate-to-drain
VGATE
capacitance placed on the external FET. A complete
design example is given in the Applications Section.
Load Control — Sequencing the Secondary Supplies
Once power has been ramped to the DC/DC controllers,
two conditions must be met before the PG# output can be
enabled: the Drain Sense voltage must be below 2.5V,
and the VGATE voltage must be greater than VDD – VGT.
The Drain Sense input helps ensure that the power MOSFET is not absorbing too much steady state power from
operating at a high VDS. This sensor remains active at all
times (except during the current regulation period). The
VGATE sensor makes sure that the power MOSFET is
operating well into its saturation region before allowing the
loads to be switched on. Once VGATE reaches VDD – V
GT
this sensor is latched.
When the external MOSFET is properly switched on the
PG# output may be enabled (if ENPG is high). Output PG#
is activated after a t
delay. The delay time is program-
PGD
mable from 50µs to 160ms.
timer allows the SMH4812 to ignore the state of the FS#
input until the timer period expires. The FS# input must be
driven high by the end of this timer period. A low level on
this input will cause a Fault condition, driving FAULT# low
and shutting off the VGATE and PG# outputs.
The purpose of the holdoff timer is to allow enough time for
devices on the secondary side of the DC/DC controllers to
power up and stabilize. This unique feature of the
SMH4812 allows supervisory circuits such as an SMS44
to control the shutdown of the primary side soft start circuit,
even though the secondary side initially has no power.
The FS# input can be programmed to act as a second
ENPG input controlling the PG# output.
Circuit Breaker Operation
The SMH4812 provides a number of circuit breaker functions to protect against over current conditions. A sustained over-current event could damage the host supply
and/or the load circuitry. The board’s load current passes
through a series resistor (RS) connected between the
MOSFET source (which is tied to CBSENSE) and VSS.
The breaker trips whenever the voltage drop across RS is
greater than 50mV for more than t
(a programmable
CBD
filter delay ranging from 10µs to 500µs).
Quick-Trip
TM
Circuit Breaker
Additionally, the SMH4812 provides a Quick-Trip feature
that will cause the circuit breaker to trip immediately if the
voltage drop across RS exceeds V
. The Quick-Trip
QCB
level may be set to 60mV, 100mV (default), 200mV, or the
feature may be disabled.
<T
CBD
CBSENSE
V
QCB
50mV
The PG# output has a 12V withstand capability, so high
voltages must not be connected to this pin. A bipolar
transistor or an opto-isolator can be used to boost the
withstand voltage to that of the host supply. See Figure 9
for connections.
Forced Shutdown — Secondary Feedback
The Forced Shutdown signal (FS#) is an active low input
that provides a method of receiving feedback from the
secondary side of the DC/DC controllers. A built-in holdoff
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
T
FSTSHTDN
VGATE
Figure 4. Circuit Breaker Quick Trip Response
2055 Fig04
9
Page 10
Current Regulation
The current regulation mode is an optional feature that
provides a means to regulate current through the MOSFET for a programmable period of time. See Figures 5a
and 5b. If enabled the device will start the internal timer
when the voltage at CBSENSE exceeds 50mV (A & G, H).
Also, it attempts to limit the voltage at CBSENSE to 60mV
by regulating the VGATE output (B & C vs. I). The circuit
breaker will trip if the over-current condition remains after
the time-out (D, E, F; & J, K, L). However, if CBSENSE
drops below 50mV before the timer ends, the timer is reset
and VGATE resumes normal operation. If the Quick-Trip
level is exceeded then the device will bypass the current
regulation timer and shut down immediately. The Current
Regulation feature is disabled in the default configuration.
12V
0V
50mV
0V
VGATE
1
FAULT#
0
CBSENSE
SMH4812
Preliminary
C
F
E
B
A
D
2055 Fig05a
Non-Volatile Fault Latch
The SMH4812 also provides an optional nonvolatile fault
latch (NVFL) circuit breaker feature. The nonvolatile fault
latch essentially provides a programmable fuse on the
circuit breaker. When enabled the nonvolatile fault latch
will be set whenever the circuit breaker trips. Once set, it
cannot be reset by cycling power.
N
OTE
UNTIL
: THE
IT IS
DEVICE REMAINS PERMANENTLY DISABLED
REPROGRAMMED AT THE FACTORY
.
As long as the NVFL is set, the FAULT# output will be
driven active. The Non-Volatile Fault Latch feature is
disabled in the default configuration.
Resetting FAULT#
When the circuit breaker trips the VGATE output is turned
off and FAULT# is driven low. In the default condition the
breaker resets automatically after a time of t
CYC
. In the
latched condition cycling power to the board or toggling the
EN/TS input will also reset the circuit breaker. If the over
current condition still exists after the MOSFET switches
back on, the circuit breaker will re-trip.
Figure 5.a. Current Regulation & Shutdown
12V
VGATE
0V
1
FAULT#
0
50mV
CBSENSE
0V
I
L
K
H
G
J
2055 Fig05b
Figure 5.b. Current Regulation & Shutdown
10
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 11
APPLICATIONS
SMH4812
Preliminary
Operating at High Voltages
The breakdown voltage of the external active and passive
components limits the maximum operating voltage of the
SMH4812 hot-swap controller. Components that must be
able to withstand the full supply voltage are: the input and
output decoupling capacitors, the protection diode in series with the DRAIN SENSE pin, the power MOSFET
switch and the capacitor connected between its drain and
gate, the high-voltage transistors connected to the power
good outputs, and the dropper resistor connected to the
controller’s VDD pin.
Over-Voltage and Under-Voltage Resistors
In the following examples, the three resistors, R1, R2, and
R3, connected to the OV and UV inputs, must be capable
of withstanding the maximum supply voltage of several
hundred volts. The trip voltage of the UV and OV inputs is
2.5V relative to V
. As the input impedance of UV and OV
SS
is very high, large value resistors can be used in the
resistive divider. The divider resistors should be high
stability, 1% metal-film resistors to keep the under-voltage
and over-voltage trip points accurate.
Telecom Design Example
A hot-swap telecom application may use a 48V power
supply with a –25% to +50% tolerance (
i.e.
, the 48V supply
can vary from 36V to 72V). The formulae for calculating
R1, R2, and R3 follow.
First a peak current, ID
, must be specified for the
MAX
resistive network. The value of the current is arbitrary, but
it can't be to high (self-heating in R3 will become a
problem), or too low (the value of R3 becomes very large,
and R3 becomes very expensive). To set the calculations
a nominal value of 250µA will be assumed.
With VOV (2.5V) being the over-voltage trip point, R1 is
calculated by the formula:
V
OV
=
R1
ID
MAX
.
Substituting:
MIN
VS
MAX
.
×
IDVS
MAXMIN
=
ID
Substituting:
µ
72V
−
MINUV
ID
MIN
−
µ
×
µ
.
:
MIN
.
.
250 A 36V
==
ID125 A
MIN
Now the value of R3 is calculated from ID
VSV
=
R3
V
is the under-voltage trip point, also 2.5V. Substituting:
UV
36V 2.5V
==Ω
R3268k
125 A
The closest standard 1% resistor value is 267kΩ
Then R2 is calculated:
V
+=
R1 R2
()
ID
UV
MIN
,
or
V
UV
=−
R2R1
ID
MIN
.
Substituting:
2.5V
=−Ω=Ω−Ω=Ω
R210k20k10k10k
µ
125 A
.
Dropper Resistor Selection
The SMH4812 is powered from the high-voltage supply
via a dropper resistor, RD. The dropper resistor must
provide the SMH4812 (and its loads) with sufficient operating current under minimum supply voltage conditions,
but must not allow the maximum supply current to be
exceeded under maximum supply voltage conditions.
The dropper resistor value is calculated from:
2.5V
==Ω
R110k
µ
250 A
.
Next the minimum current that flows through the resistive
divider, ID
, is calculated from the ratio of minimum and
MIN
maximum supply voltage levels:
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
R
where VS
V
is the upper limit of the SMH4812 supply voltage,
DDMAX
MINDD
=
D
II
DDLOAD
is the lowest operating supply voltage,
MIN
MAX
+
,
−
VSV
IDD is minimum current required for the SMH4812 to
operate, and I
is any additional load current from the
LOAD
2.5V and 5V outputs and between VDD and VSS.
11
Page 12
SMH4812
Preliminary
The min/max current limits are easily met using the dropper resistor, except in circumstances where the input
voltage may swing over a very wide range (
e.g.
, input
varies between 20V and 100V). In these circumstances it
may be necessary to add an 11V zener diode between
VDD and VSS to handle the wide current range. The zener
voltage should be below the nominal regulation voltage of
the SMH4812 so that it becomes the primary regulator.
MOSFET VDS(ON) Threshold
The drain sense input on the SMH4812 monitors the
voltage at the drain of the external power MOSFET switch
with respect to V
. When the MOSFET’s VDS is below the
SS
user-defined threshold the MOSFET switch is considered
to be ON. The VDS(ON)
THRESHOLD
is adjusted using the
resistor, RT, in series with the drain sense protection
diode. This protection, or blocking, diode prevents high
voltage breakdown of the drain sense input when the
MOSFET switch is OFF. A low leakage MMBD1401 diode
offers protection up to 100V. For high voltage applications
(up to 500V) the Central Semiconductor CMR1F-10M
diode should be used. The VDS(ON)
THRESHOLD
is calcu-
lated from:
VONVIR V
()()
where V
DSSENSESENSETDIODE
DIODE
THRESHOLD
is the forward voltage drop of the protection
diode. The VDS(ON)
due to the temperature dependence of V
The calculation below gives the VDS(ON)
=−×−
THRESHOLD
varies over temperature
DIODE
THRESHOLD
and I
SENSE
under
the worst case condition of 85°C ambient. Using a 68kΩ
resistor for RT gives:
VON2.5V15A68k 0.5V1V
()()
DS
THRESHOLD
=− ×Ω−=
µ
The voltage drop across the MOSFET switch and sense
resistor, V
, is calculated from:
DSS
The dropper resistor value should be chosen such that the
minimum and maximum I
and VDD specifications of the
DD
SMH4812 are maintained across the host supply’s valid
operating voltage range. First, subtract the minimum V
of the SMH4812 from the low end of the voltage, and divide
by the minimum IDD value. Using this value of resistance
as RD find the operating current that would result from
running at the high end of the supply voltage to verify that
the resulting current is less than the maximum IDD current
allowed. If some range of supply voltage is chosen that
would cause the maximum IDD specification to be violated,
then an external zener diode with a breakdown voltage of
≈12V should be used across V
DD
.
As an example of choosing the proper RD value, assume
the host supply voltage will range from 36 to 72V. The
largest dropper resistor that can be used is: (36V-11V)/
3mA = 8.3kΩ. Next, confirm that this value of RD also
works at the high end: (72V-13V)/8.3kΩ = 7.08mA, which
is less than 10mA.
The FS# input can also be used in conjunction with a
secondary-side supervisory circuit providing a positive
feedback loop during the power up sequence. As an
example, assume the SMH4812 is configured to turn on –
,
48V to a DC/DC converter with a 1.6ms delay. Further
assume all of the enable inputs are true and PG# has just
been sequenced on. If FS# option 4 (100
has been selected, then FS# must be driven high within
.
in register 5)
BIN
1.6ms after PG# goes low, otherwise the PG output will be
disabled. Ideally, there would be a secondary-side supervisor similar to the SMS44 that would have its reset timeout period programmed to be less than 1.6ms. After the
supply turns on the RESET# output of the SMS44 would
be released and FS# pulled high. However, if for any
.
reason the supply doesn't turn on, the RESET# will not be
released and the SMH4812 will disable the PG output.
DD
=+
VIRR
DSSDSON
()
,
where ID is the MOSFET drain current, RS is the circuit
breaker sense resistor and RON is the MOSFET on resistance.
12
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 13
APPLICATIONS CIRCUITS
SMH4812
Preliminary
–48V
0V
10nF
100V
10kΩ
10kΩ
100nF
50V
R1
R3
R2
EN/TS
UV
OV
PD1#
PD2#
FAULT#
SS
V
20mΩ
6.8kΩ
DD
V
R
S
R
D
REF
2.5V
CBSENSE
ENPG
SMH4812
GATE
V
100nF
1kΩ
*10Ω
10nF
100V
FS#
PG#
5V
REF
DRAIN SENSE
R
T
68kΩ
MMBD1401
MMBD-
47kΩ
100nF
50V
0V
MMBTA-
06LT1
1401
100µF
100V
–48V
2055 Fig06
Figure 6. Changing Polarity of Power Good Output (PG#)
Note: Figures 6 through 9 — the *10Ω resistor must be located as close as possible to the MOSFET
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
13
Page 14
SMH4812
R
T
68kΩ
1kΩ
*10Ω
10nF
100V
MMBD1401
100nF
100kΩ
MMBTA06LT1
100nF
50V
100nF
50V
10nF
100V
UV
OV
PD1#
PD2#
FAULT#
V
DD
ENPG
PG#
5V
REF
SMH4812
V
SS
CBSENSE
V
GATE
DRAIN SENSE
0V
–48V
10kΩ
10kΩ
R1
R
D
6.8kΩ
100µF
100V
R3
1MΩ
R2
R
S
20mΩ
0V
–48V
2.5V
REF
EN/TS
+
–
LMV331
1kΩ
50kΩ
NTC
50kΩ
@T
MAX
100nF
50V
2055 Fig07
FS#
Preliminary
Note: Figures 6 through 9 — the *10Ω resistor must be located as close as possible to the MOSFET
14
Figure 7. Overtemperature Shutdown
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 15
SMH4812
Preliminary
EN1
EN2
EN3
EN4
–48V
0V
0V
10kΩ
10nF
100V
1MΩ
+
–
+
–
LMV
339
+
–
10kΩ
+
–
10kΩ
100nF
50V
R3
1kΩ
EN/TS
UV
R2
OV
PD1#
PD2#
FAULT#
R1
SS
V
R
S
20mΩ
R
D
6.8kΩ
DD
REF
V
2.5V
SMH4812
CBSENSE
100nF
*10Ω
ENPG
GATE
V
1kΩ
10nF
100V
FS#
PG#
5V
REF
DRAIN SENSE
100nF
50V
R
T
68kΩ
MMBD1401
MMBTA06LT1
100kΩ
100nF
50V
100µF
100V
–48V
2055 Fig08
SUMMIT MICROELECTRONICS, Inc.
Figure 8. Expanding Input Monitoring Capability
2055 4.0 12/22/00
15
Page 16
0V
R3
R
D
6.8kΩ
SMH4812
Preliminary
–48V
10nF
100V
10kΩ
10kΩ
100nF
50V
R2
R1
SS
R
DD
V
S
SMH4812
GATE
CBSENSE
100nF
V
*10Ω
1kΩ
10nF
100V
ENPG
FS#
PG2#
5V
REF
DRAIN SENSE
68kΩ
MMBD1401
MMBTA06LT1
100kΩ
100nF
50V
EN/TS
UV
OV
PD1#
PD2#
FAULT#
V
Figure 9. Typical Application for DC/DC Converter
100µF
100V
DC / DC
Converter
with
Active Low
On/Off Control
+VIN
+VOUT
–VIN
–VOUT
ON/OFF
2055 Fig09
V
0V
Note: Figures 6 through 9 — the *10Ω resistor must be located as close as possible to the MOSFET
3. Mold flash, protrusion & gate burr shall not exceed 0.006 inch per side.
0.007 ± 0.003
0.023 ± 0.005
0.041
DETAIL A
2055 SOIC 1.0
18
2055 4.0 12/22/00
SUMMIT MICROELECTRONICS, Inc.
Page 19
ORDERING INFORMATION
SMH4812
Preliminary
Base Part Number
SMH4812
G
Package
G = SSOP
S = SOIC
2055 T ree 1.0
NOTICE
SUMMIT Microelectronics, Inc. reserves the right to make changes to the products contained in this publication in order
to improve design, performance or reliability. SUMMIT Microelectronics, Inc. assumes no responsibility for the use of
any circuits described herein, conveys no license under any patent or other right, and makes no representation that
the circuits are free of patent infringement. Charts and schedules contained herein reflect representative operating
parameters, and may vary depending upon a user’s specific application. While the information in this publication has
been carefully checked, SUMMIT Microelectronics, Inc. shall not be liable for any damages arising as a result of any
error or omission.
SUMMIT Microelectronics, Inc. does not recommend the use of any of its products in life support or aviation applications
where the failure or malfunction of the product can reasonably be expected to cause any failure of either system or to
significantly affect their safety or effectiveness. Products are not authorized for use in such applications unless
SUMMIT Microelectronics, Inc. receives written assurances, to its satisfaction, that: (a) the risk of injury or damage has
been minimized; (b) the user assumes all such risks; and (c) potential liability of SUMMIT Microelectronics, Inc. is
adequately protected under the circumstances.