Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
SC-59
TOP VIEW
Millimeter
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0.10 R
EF.
B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
2
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5409 provide the designer with best combination
of fast switching, low on-resistance and cost-effectiveness.
The SMG5409 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Simple Drive Requirement
Small Package Outline
MARKING
SMG5409
-2.6A , -30V , R
P-Channel Enhancement Mode MOSFET
REF.
DS(ON)
120 mΩ
ΩΩΩ
REF.
5409
PACKAGE INFORMATION
Package MPQ Leader Size
D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
SC-59 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 2
Pulsed Drain Current 1 IDM -12 A
Power Dissipation TA=25°C PD 1.38 W
TA=25°C unless otherwise specified)
TA=25°C
ID
TA=70°C -2
-2.6
A
Linear Derating Factor 0.01 W / °C
Operating Junction and Storage Temperature Range Tj, T
-55~150 °C
stg
Thermal Resistance Rating
Maximum Junction to Ambient 2 R
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.
90 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 1 of 4
Page 2
SMG5409
-2.6A , -30V , R
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
DS(ON)
120 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter
(TA=25°C unless otherwise specified)
Symbol Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Drain-Source Leakage Current I
Drain-Source On-Resistance 1 R
Forward Transconductance g
DSS
GS(th)
GSS
DSS
DS(ON)
fs
-30 - - V VGS=0, ID= -250uA
-1.0 - -3.0 V VDS=VGS, ID= -250uA
- -
- - -1
- - -5 VDS= -24V, VGS=0
- - 120
- - 170 VGS= -4.5V, ID= -2.0A
- 4 - S VDS= -5V, ID= -2.5A
Dynamic
Total Gate Charge 1 Qg - 5 8
Gate-Source Charge Qgs - 1 Gate-Drain Charge Qgd - 3 Turn-on Delay Time 1 T
Rise Time Tr - 5 Turn-off Delay Time T
Fall Time Tf - 7 -
- 8 -
d(on)
- 20 -
d(off)
±
100
Teat Conditions
nA VGS=±20V
VDS= -30V, VGS=0
µA
VGS= -10V, ID= -2.6A
mΩ
VDS= -24V,
nC
VGS= -4.5V,
ID= -2.6A
VDS= -15V,
VGS= -10V,
nS
RG=3.3Ω,
RD=15Ω,
ID= -1A
Input Capacitance Ciss - 412 660
Output Capacitance Coss - 91 Reverse Transfer Capacitance Crss - 62 -
pF
VGS=0,
VDS= -25V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage 1 VSD - - -1 V IS= -1A, VGS=0
Reverse Recovery Time 1 TRR - 16.8 - ns
Reverse Recovery Charge QRR - 10 - nC
Notes:
1. Pulse width≦300us, duty cycle≦2%.
IS= -2.6A, VGS=0
dI/dt=100A/µs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG5409
-2.6A , -30V , R
P-Channel Enhancement Mode MOSFET
DS(ON)
120 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG5409
-2.6A , -30V , R
P-Channel Enhancement Mode MOSFET
DS(ON)
120 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 4 of 4
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