Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
SC-59
TOP VIEW
Millimeter
Millimeter
Min.
Max. Min. Max.
A 2.70 3.10 G 0.10 REF.
B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
1
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5406 utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SMG5406 is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Small Package Outline
MARKING
SMG5406
3.6A , 30V , R
N-Channel Enhancement Mode MOSFET
REF.
DS(ON)
65 mΩ
ΩΩΩ
REF.
5406
PACKAGE INFORMATION
D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
Package MPQ Leader Size
SC-59 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 2 , VGS@10V
TA=25°C unless otherwise specified)
TA=25°C
ID
TA=70°C 2.8
3.6
A
Pulsed Drain Current 1 IDM 10 A
Power Dissipation TA=25°C PD 1.38 W
Linear Derating Factor 0.01 W / °C
Operating Junction and Storage Temperature Range Tj, T
-55~150 °C
stg
Thermal Resistance Rating
Maximum Junction to Ambient 2 R
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 1 of 4
2
copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.
90 °C / W
θJA
Page 2
SMG5406
3.6A , 30V , R
Elektronische Bauelemente
N-Channel Enhancement Mode MOSFET
DS(ON)
65 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Drain-Source Leakage Current I
Drain-Source On-Resistance 1 R
Forward Transconductance g
DSS
GS(th)
GSS
DSS
DS(ON)
fs
30 - - V VGS=0, ID=250µA
1 - 3 V VDS=VGS, ID=250µA
- -
- - 1
- - 10 VDS=24V, VGS=0
- - 65
- - 90 VGS=4.5V, ID=2.8A
- 11 - S VDS=5V, ID=3.6A
Dynamic
Total Gate Charge1 Qg - 3 5
Gate-Source Charge Qgs - 0.8 Gate-Drain Charge Qgd - 1.8 Turn-on Delay Time1 T
Rise Time Tr - 9 Turn-off Delay Time T
Fall Time Tf - 2 -
- 5 -
d(on)
- 11 -
d(off)
±
100
Teat Conditions
nA VGS=±20V
VDS=30V, VGS=0
µA
VGS=10V, ID=3.6A
mΩ
VDS=24V,
nC
VGS=4.5V,
ID=2.5A
VDS=15V,
VGS=10V,
nS
RG=3.3Ω,
RD=15Ω,
ID=1A
Input Capacitance Ciss - 120 290
Output Capacitance Coss - 62 Reverse Transfer Capacitance Crss - 24 Gate Resistance Rg - 3.5 - Ω f=1.0MHz
pF
VGS=0,
VDS=25V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage1 VSD - - 1.0 V IS=1A, VGS=0
Reverse Recovery Time1 TRR - 7.5 - ns
Reverse Recovery Charge QRR - 2.5 - nC
Notes:
1. Pulse width≦300us, duty cycle≦2%.
IS=3.5A, VGS=0
dI/dt=100A/µs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG5406
3.6A , 30V , R
N-Channel Enhancement Mode MOSFET
DS(ON)
65 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG5406
3.6A , 30V , R
N-Channel Enhancement Mode MOSFET
DS(ON)
65 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A Page 4 of 4
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