Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
SC-59
Millimeter
Millimeter
Min. Max. Min. Max.
A 2.70 3.10 G 0.10 REF.
B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5403 uses advanced trench technology to
provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM
applications.
FEATURES
Lower Gate Threshold Voltage
Small Package Outline
MARKING
SMG5403
-2.6A , -30V , R
P-Channel Enhancement Mode MOSFET
REF.
DS(ON)
115 mΩ
ΩΩΩ
REF.
5403
PACKAGE INFORMATION
D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
Package MPQ Leader Size
SC-59 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current 3
Pulsed Drain Current 1 IDM -10 A
Power Dissipation TA=25°C PD 1.38 W
TA=25°C unless otherwise specified)
TA=25°C
ID
TA=70°C -2.2
-2.6
A
Linear Derating Factor 0.01 W / °C
Operating Junction and Storage Temperature Range TJ, T
-55~150 °C
STG
Thermal Resistance Rating
Maximum Junction to Ambient 3 R
90 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Sep-2012 Rev. A Page 1 of 4
Page 2
SMG5403
-2.6A , -30V , R
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
DS(ON)
115 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter
(TA=25°C unless otherwise specified)
Symbol Min. Typ. Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Forward Transconductance gFS - 5 - S VDS= -5V,,ID = -2.5A
Gate-Body Leakage Current I
TJ=25°C
Drain-Source Leakage Current
TJ=70°C
Drain-Source On-Resistance 2 R
Total Gate Charge2 Qg - 4.5 Gate-Source Charge Qgs - 0.8 Gate-Drain Charge Qgd - 1.34 Turn-on Delay Time2 T
Rise Time Tr - 4.6 Turn-off Delay Time T
Fall Time Tf - 8 -
DSS
GS(th)
GSS
I
DSS
DS(ON)
d(on)
d(off)
-30 - - V VGS=0, ID= -250µA
-0.5 - -1.4 V VDS=VGS, ID= -250µA
- -
- - -1
- - -25 VDS= -24V, VGS=0
- - 115
- - 150 VGS= -4.5V, ID= -2A
- - 200 VGS= -2.5V, ID= -1A
- 5.4 -
- 31 -
±
100
nA VGS=±12V
VDS= -30V, VGS=0
µA
VGS= -10V, ID= -2.6A
mΩ
VDS= -15V,
nC
VGS= -4.5V,
ID= -2.5A
VDS= -15V,
VGS= -10V,
nS
RG=3.3Ω,
RD=4.6Ω,
ID= -1A
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 415 -
iss
- 55 -
oss
- 42 -
rss
pF
VGS=0
VDS= -25V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage 2 VSD - - -1.2 V IS= -1.2A, VGS=0
Reverse Recovery Time Trr - 16.2 - nS
Reverse Recovery Charge Qrr - 9 - nC
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.
IS= -2.5A, VGS=0
dl/dt=100A/µS
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Sep-2012 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
SMG5403
-2.6A , -30V , R
DS(ON)
115 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Sep-2012 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SMG5403
-2.6A , -30V , R
P-Channel Enhancement Mode MOSFET
DS(ON)
115 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Sep-2012 Rev. A Page 4 of 4
Loading...