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SMG3403
Elektronische Bauelemente
Description
The SMG3403 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SMG3403
is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Small Package Outline
* Simple Drive Requirment
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
L
S
3
Top View
2
H
Gate
1
G
Source
-3.7A, -30V,RDS(ON) 75m
B
D
C
K
Drain
J
D
Ω
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.1
S 2.40 2.80
All Dimension in mm
5
Marking : 3403
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1,2
VDS
VGS
ID@TA=25
ID@TA=7
IDM
PD@TA=25
Tj, Tstg
G
S
-30
±20
o
C
o
C
0
o
C
-3.7
-3.0
12
1.38
0.01
-55~+150
V
V
A
A
W / C
o
A
W
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
3
Max.
Symbol Ratings Unit
o
Rthj-a
90
/W C
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SMG3403
-3.7A, -30V,RDS(ON) 75m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
o
C
o
C
o
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
T
f
Ciss
Coss
Crss
Min. Unit
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.02
_
_
_
_
_
_
5
1
3
8
5
20
7
412
91
62
-3.0
±
100
-25
75
120
660
_
_
-1
8
_
_
_
_
_
_
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=55 )
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Ω
Test Condition
V
VGS=0V, ID=-250uA
o
Reference to 25 , ID=-1mA
C
V/
V
nA
uA
uA
m
nC
nS
pF
VDS=VGS, ID=-250uA
VGS= 20V
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID=- 3A
Ω
VGS=-4.5V, ID=-2.6A
ID=-3A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
VGS=0V
VDS=-25V
f=1.0MHz
±
Ω
o
C
Ω
Forward Transconductance Gfs S
_
VDS=-10V, ID=-3A
5
_
Source-Drain Diode
Parameter Symbol Max.
≦
2
2
Trr 20
Qrr
_
_ _
≦
Forward On Voltage VSD
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Typ. Test ConditionMin. Unit
__
15
°C/W
-1.2
_
nS
nC
V
IS=-1.2A, VGS=0V.
Is=-3A, VGS=0
dl/dt=100A/uS
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SMG3403
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
-3.7A, -30V,RDS(ON) 75m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 3. On-Resistance v.s. Gate Voltage
v.s. Junction Temperature
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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SMG3403
-3.7A, -30V,RDS(ON) 75m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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